Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: An electronic device is provided, including a main body and a camera module. The camera module has a frame, a lens unit disposed in the frame, a guiding member, and a hinge. The guiding member is affixed to the main body and has a rail and a spring sheet. The hinge pivotally connects to the frame and the guiding member. When the camera module is in the retracted position, the camera module is hidden in a recess of the main body. When the camera module slides out of the recess from the retracted position along the rail into the operational position, the spring sheet is pressed by the hinge to increase the friction between the hinge and the guiding member.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A microbial carrier and a device for treating wastewater are provided. The microbial carrier includes a bacteriophilic material and a plurality of foam cells, wherein the foam cells are disposed in the bacteriophilic material. The bactericidal material is a reaction product of a composite, wherein the composition includes a hydrophobic polyvinyl alcohol and a cross-linking agent, wherein the surface energy of the hydrophobic polyvinyl alcohol is 30 mJ/m2 to 58 mJ/m2.

Abstract: A microbial carrier and a device for treating wastewater are provided. The microbial carrier includes a bacteriophilic material and a plurality of foam cells, wherein the foam cells are disposed in the bacteriophilic material. The bactericidal material is a reaction product of a composite, wherein the composition includes a hydrophobic polyvinyl alcohol and a cross-linking agent, wherein the surface energy of the hydrophobic polyvinyl alcohol is 30 mJ/m2 to 58 mJ/m2.