Abstract: A self-driven active clamp circuit applied to a flyback converter having a transformer and a switch has a clamp switch and a resistor. The clamp switch is connected between a first capacitor and a second capacitor in series. Another terminal of the first capacitor is connected to a first terminal of a primary-side winding of the transformer. Another terminal of the second capacitor is connected to a second terminal of the primary-side winding of the transformer and the switch of the flyback converter. A terminal of the resistor is connected to a control terminal of the clamp switch. Another terminal of the resistor is connected to the second terminal of the primary-side winding of the transformer and the switch of the flyback converter.

Abstract: A self-driven active clamp circuit applied to a flyback converter having a transformer and a switch has a clamp switch and a resistor. The clamp switch is connected between a first capacitor and a second capacitor in series. Another terminal of the first capacitor is connected to a first terminal of a primary-side winding of the transformer. Another terminal of the second capacitor is connected to a second terminal of the primary-side winding of the transformer and the switch of the flyback converter. A terminal of the resistor is connected to a control terminal of the clamp switch. Another terminal of the resistor is connected to the second terminal of the primary-side winding of the transformer and the switch of the flyback converter.

Abstract: A multi-mode hybrid control DC-DC converting circuit has a switching power converter and a microcontroller. The switching power converter has a transformer and a switching switch. The switching switch is connected to a primary-side winding of the transformer in series. The microcontroller is connected to the switching power converter and a control terminal of the switching switch. The microcontroller sets multiple thresholds according to an input voltage of the switching power converter, and determines whether a feedback voltage of the switching power converter is higher or lower than each one of the thresholds to perform a variable-frequency mode, a constant-frequency mode, or a pulse-skipping mode. The microcontroller outputs a driving signal to the switching switch and correspondingly adjusts a frequency of the driving signal according to the variable-frequency mode, the constant-frequency mode, or the pulse-skipping mode which is performed.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: A utility knife is provided, including: a housing, defining an operation compartment and a storage compartment; a blade holder, movably received within the operation compartment; a blade storing carrier, movably received within the storage compartment, including a receiving portion for receiving at least one spare blade and a grip portion; and a locking mechanism, including a base body, a movable member, a first engaging member and a second engaging member, the base body being disposed to the housing, the movable member being attached to the base body and movable between a locking position and a release position, the first engaging member being disposed on and movable with the movable member, the first engaging member and the second engaging member are releasably engaged with each other so that the blade storing carrier is detachable from the housing.

Abstract: A wide input voltage range power converter circuit in a one-stage-two-switch configuration has a power input terminal, a switch node connected to the power input terminal, a transformer, two electronic switches, a pulse width modulation (PWM) circuit, and an output circuit. An input side of the transformer has a first winding and a second winding that are connected to the switch node. An output side of the transformer has an output winding. A turns ratio between the first winding and the output winding is different from a turns ratio between the second winding and the output winding. The two electronic switches are respectively connected to the first winding and the second winding in series. The PWM circuit is connected to the power input terminal and control terminals of the two electronic switches. The output circuit is connected to the output winding.

Abstract: An auxiliary power supply circuit operating within a wide input voltage range has a voltage follower unit and a voltage comparison unit. The voltage follower unit has an electronic switch, a resistor, and a Zener diode. The electronic switch has a first terminal electrically connected to a voltage input terminal of the working voltage conversion circuit, a second terminal electrically connected to a voltage output terminal of the working voltage conversion circuit, and a control terminal. The resistor is electrically connected between the first terminal and the control terminal of the electronic switch. The Zener diode has a cathode electrically connected to the control terminal of the electronic switch. The voltage comparison unit has a detecting terminal electrically connected to the voltage input terminal of the working voltage conversion circuit, and an output terminal electrically connected to the control terminal of the electronic switch.

Abstract: A utility knife is provided, including: a housing, including first and second compartments; a blade holder, movably received within the first compartment; a blade storing carrier, detachably inserted in the second compartment, including a receiving portion for receiving at least one spare blade; an elastic unit, disposed between the housing and the blade storing carrier; and a locking mechanism, including a base body disposed to the housing, a movable member attached to the base body and movable between locking and release positions, a first engaging member disposed on the movable member and a second engaging member disposed on the receiving portion and releasably engagable with the first engaging member, when the is second engaging member is disengaged from the second engaging member, the elastic unit biases the receiving portion to eject the blade storing carrier.

Abstract: A utility knife is provided, including: a housing, including first and second compartments; a blade holder, movably received within the first compartment; a blade storing carrier, detachably inserted in the second compartment, including a receiving portion for receiving at least one spare blade; an elastic unit, disposed between the housing and the blade storing carrier; and a locking mechanism, including a base body disposed to the housing, a movable member attached to the base body and movable between locking and release positions, a first engaging member disposed on the movable member and a second engaging member disposed on the receiving portion and releasably engagable with the first engaging member, when the is second engaging member is disengaged from the second engaging member, the elastic unit biases the receiving portion to eject the blade storing carrier.

Abstract: A utility knife is provided, including: a housing, defining an operation compartment and a storage compartment; a blade holder, movably received within the operation compartment; a blade storing carrier, movably received within the storage compartment, including a receiving portion for receiving at least one spare blade and a grip portion; and a locking mechanism, including a base body, a movable member, a first engaging member and a second engaging member, the base body being disposed to the housing, the movable member being attached to the base body and movable between a locking position and a release position, the first engaging member being disposed on and movable with the movable member, the first engaging member and the second engaging member are releasably engaged with each other so that the blade storing carrier is detachable from the housing.

Abstract: A ratchet wrench is provided, including: a main body and a handling assembly. The main body includes a head portion being assembled with a ratchet head and a handling portion remote from the head portion. The handling assembly includes a casing coveringly disposed on the handling portion, and the casing defines a receiving space which is configured to receive at least one object and has at least one opening disposed therethrough. Part of an outer surface of the handling portion is flush with or protrusive beyond the at least one opening, and a material of the handling portion is different from a material of the casing.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: An auxiliary power supply circuit operating within a wide input voltage range has a voltage follower unit and a voltage comparison unit. The voltage follower unit has an electronic switch, a resistor, and a Zener diode. The electronic switch has a first terminal electrically connected to a voltage input terminal of the working voltage conversion circuit, a second terminal electrically connected to a voltage output terminal of the working voltage conversion circuit, and a control terminal. The resistor is electrically connected between the first terminal and the control terminal of the electronic switch. The Zener diode has a cathode electrically connected to the control terminal of the electronic switch. The voltage comparison unit has a detecting terminal electrically connected to the voltage input terminal of the working voltage conversion circuit, and an output terminal electrically connected to the control terminal of the electronic switch.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: A ratchet wrench is provided, including: a main body and a handling assembly. The main body includes a head portion being assembled with a ratchet head and a handling portion remote from the head portion. The handling assembly includes a casing coveringly disposed on the handling portion, and the casing defines a receiving space which is configured to receive at least one object and has at least one opening disposed therethrough. Part of an outer surface of the handling portion is flush with or protrusive beyond the at least one opening, and a material of the handling portion is different from a material of the casing.

Abstract: A wide input voltage range power converter circuit in a one-stage-two-switch configuration has a power input terminal, a switch node connected to the power input terminal, a transformer, two electronic switches, a pulse width modulation (PWM) circuit, and an output circuit. An input side of the transformer has a first winding and a second winding that are connected to the switch node. An output side of the transformer has an output winding. A turns ratio between the first winding and the output winding is different from a turns ratio between the second winding and the output winding. The two electronic switches are respectively connected to the first winding and the second winding in series. The PWM circuit is connected to the power input terminal and control terminals of the two electronic switches. The output circuit is connected to the output winding.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.