Abstract: The present invention provides a method of alerting to stationary objects for vehicle. When a vehicle moves at a first speed, an optical scanning device, an infrared image extraction device, and an image extraction device extract a first optical scanning image, a first infrared image, and a first ambient image of the ambiance on one side of the vehicle. According to the fusion algorithm and the optical flow method, the first obstacle information of the first obstacle in the first image will be given. According to the location information of the first obstacle, the vehicle computer judges and generates an alert message when the relative distance is smaller than a distance threshold value and the obstacle volume is greater than a volume threshold value.

Abstract: An imaging lens assembly has an optical axis and includes an annular structure located on an object side of the imaging lens assembly and surrounds the optical axis. The annular structure is located on an object side of the imaging lens assembly, surrounds the optical axis, and includes a first through hole, a second through hole, a first frustum surface, a second frustum surface and a third frustum surface. The first through hole is disposed on an object side of the annular structure, and the second through hole is disposed on an image side of the first through hole. The first frustum surface is disposed on the image side of the first through hole. The second frustum surface is disposed on an object side of the second through hole. The third frustum surface is disposed on an image side of the second through hole.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A memory device includes a substrate, a bottom electrode disposed over the substrate, a top electrode disposed over the bottom electrode, and a phase change layer disposed between the top electrode and bottom electrode. The phase change layer includes a GeSbTe material that contains a Ge content of about 20 at % or less, a Sb content of about 30 at % or more, and a Te content of about 40 at % at or more.

Abstract: A method for recycling concrete waste includes the steps of: a) heating the concrete waste to provide a measure of fragility to the concrete waste; b) milling and sieving the heated concrete waste to separate coarse aggregate from the concrete waste; and c) milling and sieving a remaining portion of the concrete waste remaining after separation of the coarse aggregate to separate the remaining portion of the concrete waste into a cement-containing fraction and fine aggregate.

Abstract: A method for making a regenerated soil material for the production of a structural unit includes the steps of: a) obtaining a raw soil material containing aluminum and silicon from a natural source; b) adding an active mineral containing aluminum and silicon to the raw soil material; c) cleaving the raw soil material and the active mineral in a base so as to dissociate aluminum monomer and silicon monomer out of the mixture of the raw soil material and the active mineral; and d) polymerizing the aluminum monomer and the silicon monomer so as to form silicon-oxy tetrahedron and aluminum-oxy tetrahedron in the mixture.

Abstract: A method for recycling concrete waste includes the steps of: a) heating the concrete waste to provide a measure of fragility to the concrete waste; b) milling and sieving the heated concrete waste to separate coarse aggregate from the concrete waste; and c) milling and sieving a remaining portion of the concrete waste remaining after separation of the coarse aggregate to separate the remaining portion of the concrete waste into a cement-containing fraction and fine aggregate.

Abstract: A method for making a regenerated soil material for the production of a structural unit includes the steps of: a) obtaining a raw soil material containing aluminum and silicon from a natural source; b) adding an active mineral containing aluminum and silicon to the raw soil material; c) cleaving the raw soil material and the active mineral in a base so as to dissociate aluminum monomer and silicon monomer out of the mixture of the raw soil material and the active mineral; and d) polymerizing the aluminum monomer and the silicon monomer so as to form silicon-oxy tetrahedron and aluminum-oxy tetrahedron in the mixture.

Abstract: A method for producing a ready-mix soil material includes the steps of: (a) crushing earth material excavated from a work site; (b) sieving the earth material after crushing so as to obtain raw soil material; and (c) mixing metered amounts of the raw soil material and at least one strength-enhancing additive in an automated manner so as to obtain the ready-mix soil material.

Abstract: A method for producing a ready-mix soil material includes the steps of: (a) crushing earth material excavated from a work site; (b) sieving the earth material after crushing so as to obtain raw soil material; and (c) mixing metered amounts of the raw soil material and at least one strength-enhancing additive in an automated manner so as to obtain the ready-mix soil material.

Abstract: The present invention provides an improved cache memory architecture with way prediction. The improved architecture entails placing the address tag array of a cache memory on the central processing unit core (i.e. the microprocessor chip), while the cache data array remains off the microprocessor chip. In addition, a way predictor is provided in conjunction with the improved memory cache architecture to increase the overall performance of the cache memory system.

Abstract: The present invention provides a method and a data processing system for accessing a memory of a data processing system, the data processing system including a first and at least a second level memory for storing information. The method includes issuing a memory request to the first level memory, and issuing the memory request to the second level memory at substantially the same time the memory request is issued to the first level memory.