Abstract: A computing device may obtain one or more raw images captured from sensors of an autonomous driving vehicle (ADV). The computing device may apply one or more signal processing parameters to one or more raw images, resulting in one or more processed images. The computing device may apply an object detection algorithm of the ADV to the one or more processed images. The computing device may determine a score of the object detection algorithm as applied to the one or more processed images. One or more optimized signal processing parameters may be determined based on the score of the object detection algorithm and the signal processing parameter. The one or more optimized signal processing parameters may be used to configure the ADV for use during autonomous driving.

Abstract: The present document describes techniques associated with a textile-material model for vibroacoustic structural simulation. The techniques described herein provide a nontrivial methodology to test a textile and simplify its representation, which can enable prediction of acoustic performance (e.g., rub and buzz) of an electronic-speaker device having a textile mounted thereon. The textile is modeled as a textile-material model based on an elongation stiffness obtained from a time-temperature superposition curve of the textile, which is based on a dynamic mechanical analysis test of the textile in each of course and wale directions. The textile-material model is then applied to an assembly model of the electronic-speaker device to simulate a vibroacoustic response of the textile relative to the assembly model to predict a likelihood of rub and buzz.

Abstract: An oscillator frequency modulation method includes: providing a piezoelectric material having a surface and an interior; and performing a pattern process on the piezoelectric material by a laser. A patterned processing zone is formed on the surface and/or in the interior of the piezoelectric material. The pattern process may be a material removal and/or a material modification. Therefore, without changing the appearance of the piezoelectric material, the pattern process on the piezoelectric material through the laser can accurately adjust the frequency of the oscillator and block unnecessary mode at the same time. An oscillator piezoelectric structure with frequency modulation is also provided.

Abstract: A lighting keyboard is provided with at least one keyswitch, a support plate and a backlight module. The keyswitch has a keycap and a switch under the keycap. The support plate connects beneath the keycap by a support mechanism. The backlight module has a lighting board configured underneath the support plate and corresponding to the keycap. The lighting board includes a board, a first reflective layer and a circuit layer. The circuit layer is disposed on the board and includes a concave-convex structure and circuit traces. The circuit traces electrically connects with a light emitting unit. The first reflective layer covers the concave-convex structure to form microstructure regions.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: A passive horn integrally formed by using liquid silicone rubber, includes a first outer casing, a second outer casing, an inner casing and an iron piece. The first outer casing includes a sealing ring, a folding ring and a vibrating membrane, and the sealing ring, the folding ring and the vibrating membrane are integrally injection molded into the first outer casing. A groove is disposed in the second outer casing, and the first outer casing is disposed in the groove. The back surface of the vibrating membrane is provided with a casing groove, which is sequentially embedded with the inner casing and the iron piece. A preparation method of a passive horn integrally formed by using liquid silicone rubber, under the condition of integrated injection molding, may improve the yield rate, ensure product quality, save assembly time and labor cost, and improve production efficiency.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

Abstract: Disclosed are compounds of formula (I) below or a stereoisomer, a tautomer, or a pharmaceutically acceptable salt thereof: in which each of variables each of variables R, R1, R2, X1, X2, X3 and n is defined herein. Also disclosed is a method for treating a cancer with a compound of formula (I) or a salt thereof and a pharmaceutical composition containing same.

Abstract: A method for manufacturing a semiconductor device includes forming a first fin structure and a second fin structure, wherein an isolation region is located between the fin structures, and wherein a space is located between the fin structures and above the isolation region; depositing a blocking layer over the first fin structure, the isolation region, and the second fin structure, wherein an upper portion of the blocking layer is located above the first fin structure and the second fin structure, and wherein a lower portion of the blocking layer fills the space located between the first fin structure and the second fin structure; removing the upper portion of the blocking layer; and while the lower portion of the blocking layer remains over the isolation region, performing an etch process to recess the first fin structure and the second fin structure.

Abstract: A lighting keyboard includes a backlight module and at least one keyswitch. The backlight module includes a lighting substrate and a protruding structure. The lighting substrate includes two non-intersecting traces and a light emitting unit. The light emitting unit is connected between the two non-intersecting traces. A position of the protruding structure corresponds to a position of the light emitting unit and the protruding structure is located between the two non-intersecting traces. The at least one keyswitch is disposed on the backlight module.

Abstract: A high voltage transistor may include a stepped dielectric layer between a field plate structure and a channel region of the high voltage transistor in a substrate. The stepped dielectric layer may increase the breakdown voltage of the high voltage transistor by reducing the electric field strength near the drain region of the high voltage transistor. In particular, a portion of the stepped dielectric layer near the drain region includes a thickness that is greater relative to a thickness of another portion of the stepped dielectric layer near the gate structure. The increased thickness near the drain region provides increased electric field suppression near the drain region (which operates at high voltages). In this way, the stepped dielectric layer enables the high voltage transistor described herein to achieve higher breakdown voltages without increasing the distance between the gate structure and the drain region of a high voltage transistor.

Abstract: A biological particle enrichment apparatus and a pico-droplet generator thereof are provided. The pico-droplet generator includes a container, a hollow needle connected to the container, a first piezoelectric member disposed on the container, and a second piezoelectric member disposed on the hollow needle. The container can receive a liquid specimen having biological particles. The hollow needle and the container are fluid communicated with each other, and an inner diameter of the container is within a range from 5 times to 30 times of an inner diameter of the hollow needle. The first piezoelectric member is annularly disposed on a surrounding lateral side of the container, and enables the biological particles in the container to move along a direction away from the surrounding lateral side by vibrating the container. The second piezoelectric member can squeeze the hollow needle, so that the liquid specimen flows outwardly to form a pico-droplet.

Abstract: A biological particle analysis method is provided and includes the following steps: fluorescence staining a liquid specimen through a fluorescence staining process so as to enable a target biological particle in the liquid specimen to becomes a fluorescence; accommodating the liquid specimen into a pico-droplet generator and using a camera device to take a real-time image of the liquid specimen; using the pico-droplet generator to output a target pico-droplet having the target biological particle onto a biochip according to the real-time image; removing the fluorescent color of the target biological particle in the target pico-droplet through a washing process; and fluorescence staining the target biological particle captured by the biochip at multiple times through the fluorescence staining process and the washing process, so as to obtain a plurality of fluorescence images respectively corresponding to multiple kinds of biological characterization expressions.

Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.

Abstract: An embodiment of an integrated circuit chip includes a combination processing core and magnetoresistive random access memory (MRAM) circuitry integrated into the chip. The MRAM circuitry includes a plurality of MRAM cells. The MRAM cells are organized into a number of memories, including a cache memory, a main or working memory and an optional secondary storage memory. The cache memory includes multiple cache levels.

Abstract: A method includes locating a droplet disposed in a trap in a flow channel of a microfluidic device. The droplet is stabilized by a photo-responsive fluorosurfactant (e.g., based on plasmonic nanoparticles (NPs)). The method also includes illuminating the photo-responsive fluorosurfactant on the droplet to generate sufficient heat to cause bubble formation within the trap to release the droplet from the trap.

Abstract: A backlit-module-embedded illuminated keyswitch structure includes a baseplate, a mask film disposed below the baseplate and having a first coating configured to substantially reflect a light, a light guide sheet disposed at one side of the mask film and having a light source hole, a reflective layer disposed at one side of the light guide sheet opposite to the mask film and having an opening communicating with the light source hole, a top glue configured to connect the mask film and the light guide sheet around the light source hole, and a bottom glue configured to connect the light guide sheet and the reflective layer around the light source hole. The first coating covers the light source hole. In a stacked direction of the mask film, the light guide sheet, and the reflective layer, at least one of the top glue and the bottom glue overlaps the first coating.

Abstract: During operation, a computer system may provide instructions to access points in an indoor environment to measure relative distances between the access points. Then, the computer system may receive the measured relative distances. Moreover, the computer system may calculate geographic locations of the access points based at least in part on the measured relative distances. Next, the computer system may select potential anchor access points in the access points, and may provide, to an electronic device, information specifying the potential anchor access points. Furthermore, the computer system may receive, from the electronic device, second information specifying anchor access points in the potential access points and defined locations of the anchor access points. Additionally, the computer system may update the geographic locations based at least in part on the defined of the anchor access points, and may provide, to the access points, the updated geographic locations.

Abstract: A keyswitch backlight structure includes a light-guiding layer, a reflective layer, and a transparent adhesive layer. The light-guiding layer has a bottom surface, a light-emitting surface opposite to the bottom surface, and a surface microstructure formed on the light-emitting surface. The reflective layer is disposed opposite to the bottom surface. The transparent adhesive layer is closely attached to and between the reflective layer and the light-guiding layer corresponding to the surface microstructure. An illuminated keyswitch structure includes base plate, a keycap, a supporting mechanism, and the above keyswitch backlight structure. The keyswitch backlight structure and the base plate are stacked. The supporting mechanism is connected to and between the base plate and the keycap for lifting the keycap relative to the base plate. Light entering the light-guiding layer exits the light-guiding layer through the light-emitting surface to illuminate a transparent indication area of the keycap.