Abstract: A method for producing a ceramic sputtering target assembly has steps of providing a backing plate and forming a solder layer on a surface of the backing plate; providing a ceramic target and forming an interface layer on a surface of the ceramic target; annealing the ceramic target with the interface layer; and solder-bonding the solder layer of the backing plate and the interface layer of the ceramic target to obtain the ceramic sputtering target assembly. By annealing the interface layer made of chromium or chromium-containing alloy, the interface layer provides excellent adhesive ability to solder-bonding the solder layer and allows the ceramic target and the backing plate to be combined securely.

Abstract: A method for fabricating a copper-gallium alloy sputtering target comprises forming a raw target; treating the raw target with at least one thermal treatment between 500° C.˜850° C. being mechanical treatment, thermal annealing treatment for 0.5˜5 hours or a combination thereof to form a treated target; and cooling the treated target to a room temperature to obtain the copper-gallium alloy sputtering target that has 71 atomic % to 78 atomic % of Cu and 22 atomic % to 29 atomic % of Ga and having a compound phase not more than 25% on its metallographic microstructure. Therefore, the copper-gallium alloy sputtering target does not induce micro arcing during sputtering so a sputtering rate is consistent and forms a uniform copper-gallium thin film. Accordingly, the copper-gallium thin film possesses improved quality and properties.