Patents by Inventor Cheng-Hsing Chiang
Cheng-Hsing Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11588072Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.Type: GrantFiled: November 4, 2020Date of Patent: February 21, 2023Assignee: EPISTAR CORPORATIONInventors: Yen-Chun Tseng, Kuo-Feng Huang, Shih-Chang Lee, Ming-Ta Chin, Shih-Nan Yen, Cheng-Hsing Chiang, Chia-Hung Lin, Cheng-Long Yeh, Yi-Ching Lee, Jui-Che Sung, Shih-Hao Cheng
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Publication number: 20210135052Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.Type: ApplicationFiled: November 4, 2020Publication date: May 6, 2021Inventors: Yen-Chun Tseng, Kuo-Feng Huang, Shih-Chang Lee, Ming-Ta Chin, Shih-Nan Yen, Cheng-Hsing Chiang, Chia-Hung Lin, Cheng-Long Yeh, Yi-Ching Lee, Jui-Che Sung, Shih-Hao Cheng
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Patent number: 10811564Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.Type: GrantFiled: January 14, 2019Date of Patent: October 20, 2020Assignee: EPISTAR CORPORATIONInventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
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Patent number: 10741721Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: April 3, 2019Date of Patent: August 11, 2020Assignee: EPISTAR CorporationInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
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Publication number: 20190229233Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: April 3, 2019Publication date: July 25, 2019Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
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Patent number: 10312407Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: July 20, 2018Date of Patent: June 4, 2019Assignee: EPISTAR CORPORATIONInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
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Publication number: 20190148591Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.Type: ApplicationFiled: January 14, 2019Publication date: May 16, 2019Inventors: Kuo-Feng HUANG, Cheng-Hsing CHIANG, Jih-Ming TU
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Patent number: 10199541Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.Type: GrantFiled: October 2, 2017Date of Patent: February 5, 2019Assignee: EPISTAR CORPORATIONInventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
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Publication number: 20180351036Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: July 20, 2018Publication date: December 6, 2018Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
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Patent number: 10032954Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: May 10, 2017Date of Patent: July 24, 2018Assignee: EPISTAR CORPORATIONInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
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Publication number: 20180026158Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.Type: ApplicationFiled: October 2, 2017Publication date: January 25, 2018Inventors: Kuo-Feng HUANG, Cheng-Hsing CHIANG, Jih-Ming TU
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Patent number: 9847454Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.Type: GrantFiled: October 2, 2015Date of Patent: December 19, 2017Assignee: EPISTAR CORPORATIONInventors: Kuo-Feng Huang, Cheng-Hsing Chiang, Jih-Ming Tu
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Publication number: 20170331001Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: May 10, 2017Publication date: November 16, 2017Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
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Publication number: 20170098735Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device further comprises a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the composition of the first sub-layer is with a different atomic ratio from that of the second sub-layer. A method for manufacturing the light-emitting device is also provided.Type: ApplicationFiled: October 2, 2015Publication date: April 6, 2017Inventors: Kuo-Feng HUANG, Cheng-Hsing CHIANG, Jih-Ming TU
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Patent number: 8828757Abstract: A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate.Type: GrantFiled: August 15, 2011Date of Patent: September 9, 2014Assignee: Epistar CorporationInventors: Chih-Yuan Lin, Shih-Yi Lien, Cheng-Hsing Chiang, Chih-Hung Pan
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Publication number: 20130045551Abstract: A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate.Type: ApplicationFiled: August 15, 2011Publication date: February 21, 2013Applicant: Epistar CorporationInventors: Chih-Yuan Lin, Shih-Yi Lien, Cheng-Hsing Chiang, Chih-Hung Pan