Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: An antenna structure includes a first radiation element, a second radiation element, a third radiation element, an inductor, and a dielectric substrate. The first radiation element has a first feeding point. The second radiation element has a second feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled through the inductor to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are all disposed on the dielectric substrate.

Abstract: A coaxial mid-drive power device of a bicycle includes a reducing structure and a hollow shaft motor engaged with the reducing structure that are disposed in a motor base. An output end of the reducing structure is operatively coupled with a one-way bearing bracket with a sprocket base via a one-way bearing. A crank spindle engaged with the one-way bearing bracket through another one-way bearing penetrates through the motor base. The two one-way bearings respectively have opposite rotation directions and are respectively located on different sides, i.e., an inside and an outside, of the one-way bearing bracket. A strain gauge disposed on the crank spindle is electrically connected to an annular conductive rail assembly engaged with the crank spindle and an elastic sheet assembly on a control circuit board in the motor base, hence the strain gauge could directly obtain a change in a torque of the crank spindle.

Abstract: A coaxial mid-drive power device of a bicycle includes a reducing structure and a hollow shaft motor engaged with the reducing structure that are disposed in a motor base. An output end of the reducing structure is operatively coupled with a one-way bearing bracket with a sprocket base via a one-way bearing. A crank spindle engaged with the one-way bearing bracket through another one-way bearing penetrates through the motor base. The two one-way bearings respectively have opposite rotation directions and are respectively located on different sides, i.e., an inside and an outside, of the one-way bearing bracket. A strain gauge disposed on the crank spindle is electrically connected to an annular conductive rail assembly engaged with the crank spindle and an elastic sheet assembly on a control circuit board in the motor base, hence the strain gauge could directly obtain a change in a torque of the crank spindle.

Abstract: A job matching method that matches applicants with employers is revealed. The job matching method includes steps of providing a plurality pieces of capability information of a job seeker, creating a capability map by quantifying the pieces of capability information, and matching the capability map with a plurality of recruitment requirements. Thus the job applicant's capabilities are shown by the capability map clearly and the employers find qualified candidates more quickly. The length of the interview is reduced and the recruitment period is minimized. Therefore, the recruitment is more efficient.

Abstract: A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

Abstract: A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

Abstract: A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

Abstract: A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.

Abstract: A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

Abstract: A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.