Abstract: A method for preparing a low dielectric constant (low k) material and a film thereof is provided. The method includes the following steps. A substrate is first put into a plasma generating reaction system, and a carrier gas carrying a carbon and fluorine containing silicon dioxide precursor is then introduced into the plasma generating reaction system, so that the carbon and fluorine containing silicon dioxide precursor is formed on the substrate. After that, the carbon and fluorine containing silicon dioxide precursor is converted to a low k material film through heating; meanwhile, a stress of the low k material film is eliminated such that the film has a more compact structure. By means of these steps the carbon and fluorine containing silicon dioxide precursor is still capable of forming a low k material film of silicon dioxide containing a large amount of fluorocarbon, even under various different atmospheres.

Abstract: The present invention discloses a delivery equipment for the solid precursor particles, which is applied to the deposition of thin film. The delivery equipment for the solid precursor particles mainly comprises a container, a feeding material inlet, a feeding material tube, a feeding gas inlet, a feeding gas tube, and an output. A plurality of solid precursor particles are stored in the carrier liquid of the container, and then heated to be vapor, removed through the output of the container. The solid precursor particles are prepared by sublimation or grounding and uniformly dispersed in the carrier liquid. The disclosed delivery equipment for the solid precursor particles can reduce the required heating temperature, increase the thermal stability, prolong the used life time, and then increase the using efficiency of the precursors.

Abstract: A method for preparing a low dielectric constant (low k) material and a film thereof is provided. The method includes the following steps. A substrate is first put into a plasma generating reaction system, and a carrier gas carrying a carbon and fluorine containing silicon dioxide precursor is then introduced into the plasma generating reaction system, so that the carbon and fluorine containing silicon dioxide precursor is formed on the substrate. After that, the carbon and fluorine containing silicon dioxide precursor is converted to a low k material film through heating; meanwhile, a stress of the low k material film is eliminated such that the film has a more compact structure. By means of these steps the carbon and fluorine containing silicon dioxide precursor is still capable of forming a low k material film of silicon dioxide containing a large amount of fluorocarbon, even under various different atmospheres.

Abstract: The disclosure provides a dense Cu thin film, a dense CuO thin film and the manufacturing process applied in metallization process of ultra-large scale integration (ULSI), which uses a two-step growth consisting of pre-deposition and annealing to form a dense Cu thin film or a dense CuO thin film. In the process, a copper-containing metal-organic complex is used as precursor and a reducing gas is used as carrier gas. The precursor is carried to a reactive system with a substrate by a carrier gas and pre-deposit a CuO thin film on the substrate under lower temperature. Next, stop supplying the precursor and raise the temperature or offer other energy to anneal the thin film with hydrogen gas or reducing gas, which reduces the CuO thin film to a smooth and dense Cu thin film. Then, choosing oxide containing gas as the react gas obtains the CuO thin film.

Abstract: A photo-chemical solar cell with nanoneedle electrode and a method manufacturing the same includes at least a working electrode, a counter electrode, an electrolyte layer and a photosensitized dye layer. The working electrode is an nanoneedle electrode formed from an nanoneedle semiconductor layer, wherein the nanoneedle semiconductor layer is prepared by sol-gel method at a low temperature to increase the specific surface area, adsorb more dye, increase the conductive ratio of the electrode, and thus improve the photo-current and the conversion efficiency.

Abstract: The disclosure is a compound semiconductor thin film with anti-fog function and the manufacturing method thereof. The thin film at least includes a dense semiconductor thin film combined with a porous-needle semiconductor thin film. The disclosed compound semiconductor thin film decreases the contact angle of water and achieves hydrophilic and anti-fog properties for a long lifetime.

Abstract: This invention is a method for cleaning a semiconductor manufacturing system, which passes a highly volatile liquid agent through the system to remove the impurities and to dissolve chemicals used in the system. The cleaning agent dissolves and washes the chemicals out of the system to keep the chemicals from combining with moisture in the air and forming oxide particles. By washing with a liquid, residual gases and impurities in the system are rapidly removed from the system. After washing the system, the cleaning agent is quickly dried because the cleaning agent is highly volatile. Thereby, the system is cleaned efficiently within a short time by using this method.

Abstract: This invention relates to a method for detecting quantity variation of high purity liquid chemicals by way of detecting capacitance variation to determine the liquid level of liquid chemicals. Meanwhile, the ratio of the area of the smallest electrode of the capacitor to the distance between the electrodes is adjusted to magnify the capacitance so that a very small variation can be observed clearly. This invention also discloses a device to carry out this method.

Abstract: This invention relatives to a method for detecting quantity variation of high purity liquid chemicals by way of detecting capacitance variation to determine the liquid level of liquid chemicals. Meanwhile, the ratio of the area of the smallest electrode of the capacitor to the distance between the electrodes is adjusted to magnify the capacitance so that a very small variation can be observed clearly. This invention also discloses a device to carry out this method.

Abstract: A composition suitable for treating metal surfaces prior to bonding of the surfaces to materials including metals, rubber, glass, polymers, sealants, coatings, and in particular polymeric adhesives, to enhance the strength of the bond and to prolong useful life in corrosive environments, is described.

Abstract: A dielectric film comprising silicon, oxygen and carbon having a low dielectric constant, superior thermal stability and adhesion to commonly employed semiconductor materials is described. The film is formed from a polyorganosilane polymer applied to a substrate and subsequently cured in a two-step or three-step cure process. The film is advantageously suited for, among other things, damascene, double damascene and interlayer dielectric applications.

Abstract: A composition suitable for treating metal surfaces prior to bonding of the surfaces to materials including metals, rubber, glass, polymers, sealants, coatings, and in particular polymeric adhesives, to enhance the strength of the bond and to prolong useful life in corrosive environments, is described. The composition comprises: (a) water; (b) metal alkoxide comprising M(OR).sub.