Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: Disclosed are an in-memory computing architecture for a nearest neighbor search of a cosine distance and an operating method thereof. The in-memory computing architecture comprises two FeFET-based storage arrays, Translinear circuits and a WTA circuit, and the two storage arrays are a first storage array and a second storage array, respectively; wherein each of the storage cells comprises a FeFET and a resistor which are electrically connected; an input vector is inputted into the first storage array for outputting the inner product X of the input vector multiplied by all the storage vectors in the first storage array; the second storage array outputs the sum of squares Y of all vector elements in the storage vectors; the output values of the first storage array and the second storage array are respectively inputted into the Translinear circuits through current mirrors; and the Translinear circuits output X2/Y to the WTA circuit.

Abstract: The present invention provides an audio control circuit, wherein the audio control circuit includes a USB interface circuit, a specific interface circuit and a processing circuit. In the operation of the audio control circuit, the processing circuit receives a plurality of parameters from a host device through the specific interface circuit; and during an enumeration between the audio control circuit and the host device, the processing circuit uses the plurality of parameters to perform the enumeration.

Abstract: A continuously electronically controlled linear polarization rotator includes a first liquid crystal cell having a first upper substrate, a first lower substrate, and a transparent liquid crystal layer disposed between the first upper substrate and the first lower substrate; and a second liquid crystal cell having a second upper substrate, a second lower substrate, and a transparent liquid crystal layer disposed between the second upper substrate and second lower substrate. The first and second liquid crystal cells satisfy a condition that d?n/? is in a range of 1.2 to 1.8, wherein ? is a wavelength of incident light traveling through the first and second liquid crystal cells, d is thickness of the transparent liquid crystal layer, ?n is birefringence of the transparent liquid crystal layer. The first and second liquid crystal cells are applied by voltage to make a linear polarization angle of outgoing light continuously rotate.

Abstract: The present invention provides an audio control circuit, wherein the audio control circuit includes a USB interface circuit, a specific interface circuit and a processing circuit. In the operation of the audio control circuit, the processing circuit receives a plurality of parameters from a host device through the specific interface circuit; and during an enumeration between the audio control circuit and the host device, the processing circuit uses the plurality of parameters to perform the enumeration.

Abstract: A reflective electronic display device being pixels or sub-pixels includes: a main substrate; an electromagnetic micro-electromechanical module installed on a side of the main substrate; a shaft coupled to the electromagnetic micro-electromechanical module and the main substrate; a reflector stacked on the other side of the main substrate; a first polarizer stacked on the reflector and configured to be opposite to the main substrate, and the first polarizer defining a first penetration axis; a second polarizer installed on a side of the first polarizer a side, and the second polarizer defining a second penetration axis; an electromagnetic micro-electromechanical module driving the main substrate to drive the reflector, so as to link and rotate the first polarizer and define a bright mode, a dark mode, and a grayscale mode.

Abstract: A reflective electronic display device being pixels or sub-pixels includes: a main substrate; an electromagnetic micro-electromechanical module installed on a side of the main substrate; a shaft coupled to the electromagnetic micro-electromechanical module and the main substrate; a reflector stacked on the other side of the main substrate; a first polarizer stacked on the reflector and configured to be opposite to the main substrate, and the first polarizer defining a first penetration axis; a second polarizer installed on a side of the first polarizer a side, and the second polarizer defining a second penetration axis; an electromagnetic micro-electromechanical module driving the main substrate to drive the reflector, so as to link and rotate the first polarizer and define a bright mode, a dark mode, and a grayscale mode.

Abstract: An interface system of an image-capturing device is disclosed, which is set on a hand-held image-capturing device. The interface system of an image-capturing device includes a display unit, a touch sensor unit, and a control unit. The display unit displays a variety of setting pictures of the image-capturing device. The touch sensor unit senses a touch of a user so as to change the setting pictures displayed on the display unit. The control unit is connected with the display unit and the touch sensor unit, for controlling the operation of the image-capturing device. The disclosed interface system of an image-capturing device enables the user to adjust various kinds of exposure parameters quickly and intuitively.

Abstract: The present invention provides a method of manufacturing a trench having rounded top corners 28 in a substrate. The rounded top edges allow the formation of a gate oxide with a uniform thickness around the trench thereby reducing parasitic field FET problems. The method begins by forming a pad layer 14 over a semiconductor substrate 10. Next, an insulating layer 18 composed of silicon nitride is formed over the pad layer 14. A first opening 19 is formed in the insulating layer 18 and the pad layer 14 exposing the surface of the substrate. The first opening is defined by sidewalls of the pad layer 14 and of the insulating layer 18. An etch buffer layer 20 composed of polysilicon is formed over the resultant surface. In one etch step, the etch buffer layer 20 is anisotropically etched forming spacers 22 on the sidewalls of the pad layer 14 and of the insulating layer 18.