Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer over a wafer stage. The method also includes supplying an initial voltage to a plurality of electrodes of the wafer stage based on a topology of the semiconductor wafer, wherein the electrodes of the wafer stage are electrically isolated from each other. The method further includes measuring an adjusted topology of the semiconductor wafer after the initial voltage is supplied. In addition, the method includes supplying different first adjusted voltages to the electrodes of the wafer stage according to the adjusted topology of the semiconductor wafer.

Abstract: A lithography apparatus is provided. The lithography apparatus includes a wafer stage configured to secure a semiconductor wafer and having a plurality of electrodes. The lithography apparatus also includes an exposure tool configured to perform an exposure process by projecting an extreme ultraviolet (EUV) light on the semiconductor wafer. The lithography apparatus further includes a controller configured to control power supplied to the electrodes to have a first adjusted voltage during the exposure process for a first group of exposure fields on the semiconductor wafer so as to secure the semiconductor wafer to the wafer stage. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

Abstract: A lithography apparatus is provided. The lithography apparatus includes a wafer stage configured to secure a semiconductor wafer and having a plurality of electrodes. The lithography apparatus also includes an exposure tool configured to perform an exposure process by projecting an extreme ultraviolet (EUV) light on the semiconductor wafer. The lithography apparatus further includes a controller configured to control power supplied to the electrodes to have a first adjusted voltage during the exposure process for a first group of exposure fields on the semiconductor wafer so as to secure the semiconductor wafer to the wafer stage. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

Abstract: A casting method includes preparing a thin shell mold which is sintered and placed in a box. Sands are buried in the box to encompass the thin shell mold. The pressure chamber is depressurized. The casting material is filled into the thin shell mold, such that the thin shell mold is disposed at a vacuum state. Then, the negative pressure of the pressure chamber is released. Then, the pressure chamber is pressurized, to form a pressure difference which presses the casting material to flow into the thin shell mold, thereby finishing the casting work. The temperature of the casting material is reduced, and the pressure in the pressure chamber is increased. Then, the casting material is cooled to form a casting product. Then, the thin shell mold is broken, and the casting product is removed.

Abstract: A casting method includes preparing a thin shell mold which is sintered and placed in a box. Sands are buried in the box to encompass the thin shell mold. The pressure chamber is depressurized. The casting material is filled into the thin shell mold, such that the thin shell mold is disposed at a vacuum state. Then, the negative pressure of the pressure chamber is released. Then, the pressure chamber is pressurized, to form a pressure difference which presses the casting material to flow into the thin shell mold, thereby finishing the casting work. The temperature of the casting material is reduced, and the pressure in the pressure chamber is increased. Then, the casting material is cooled to form a casting product. Then, the thin shell mold is broken, and the casting product is removed.

Abstract: A casting method includes constructing a 3D model to add an inner wall compensation quantity, making a thin shell mold by a 3D printing machine, individually treating the thin shell mold by smooth processing, processing the thin shell mold by multi-layer impregnation slurry or gunite to make an outer shell mold, and to form a double-layer shell mold which includes the thin shell mold and the outer shell mold, processing the double-layer shell mold by sand filling and compressing, clearing the thin shell mold by a physical or chemical process, casting the outer shell mold to form a shaped article, and post processing the shaped article by shaking and sand clearing to form a product.

Abstract: A casting method using combined 3D printed shell mold and the combined shell mold used in the method. The method consists of shell mold making and casting steps. The shell mold is constructed by combination. First, the 3D printer at least prints out a runner part and several pattern die parts for molding products. In the print run, the first interfaces corresponding to the quantity of pattern die parts are printed out integrally on the runner part. The second interfaces corresponding to the first interfaces are formed on the pattern die parts. Afterwards, the first interfaces and the second interfaces are butted, the primary runner in runner part is connected to the die cavities in pattern die parts, the runner part and pattern die parts are combined to form a shell mold for casting multiple products at a time.

Abstract: A casting method includes constructing a 3D model to add an inner wall compensation quantity, making a thin shell mold by a 3D printing machine, individually treating the thin shell mold by smooth processing, processing the thin shell mold by multi-layer impregnation slurry or gunite to make an outer shell mold, and to form a double-layer shell mold which includes the thin shell mold and the outer shell mold, processing the double-layer shell mold by sand filling and compressing, clearing the thin shell mold by a physical or chemical process, casting the outer shell mold to form a shaped article, and post processing the shaped article by shaking and sand clearing to form a product.

Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

Abstract: A casting method using combined 3D printed shell mold and the combined shell mold used in the method. The method consists of shell mold making and casting steps. The shell mold is constructed by combination. First, the 3D printer at least prints out a runner part and several pattern die parts for molding products. In the print run, the first interfaces corresponding to the quantity of pattern die parts are printed out integrally on the runner part. The second interfaces corresponding to the first interfaces are formed on the pattern die parts. Afterwards, the first interfaces and the second interfaces are butted, the primary runner in runner part is connected to the die cavities in pattern die parts, the runner part and pattern die parts are combined to form a shell mold for casting multiple products at a time.

Abstract: A manufacturing process includes (1) disposing a platform in a first tank filled with a first liquid; (2) curing the first liquid to form a portion of a mold on the platform; (3) disposing the platform from the first tank to a second tank filled with a cleaning agent; (4) cleaning; (5) disposing the platform from the second tank to a third tank filled with a second liquid; (6) curing the second liquid to form inner and outer supports of the mold; (7) disposing the platform from the third tank to the second tank; (8) cleaning; (9) disposing the platform from the second tank to the first tank; (10) curing the first liquid to form another portion on the mold; (11) repeating steps (3) to (10) until a complete mold is created; (12) heating the mold to cause the molten material to exit, and (13) creating a hollow product.

Abstract: A manufacturing process includes creating 3D shells; connecting the 3D shells together to arrange as rows of the 3D shells and fasten same in a sand box; disposing the sand box in a closed chamber having a furnace and a heater; activating a pump to lower pressure in the closed chamber to be less than the atmospheric pressure; heating the sand box; introducing a molten, non-metallic material from the furnace into each 3D shell; deactivating the pump; flowing gas into the closed chamber to increase the pressure in the closed chamber to be greater than the atmospheric pressure; cooling the sand box; taking the sand box out of the closed chamber; shaking the sand box to separate the rows of the 3D shells from sand; cutting the rows of the 3D shell to obtain the 3D shells; rubbing each 3D shell; and finishing non-metallic products.

Abstract: A casting method of using 3D printing to make shell mold, comprising the following steps of: conducting computer-aided graphic design based on the product to be manufactured; importing the graphic design into the 3D printer to print a 3D shell mold; conducting a sintering process of the printed shell mold for solidifying thereof; using the sintered shell mold as a casting cavity, injecting a molten raw material into the shell mold for formation; in the end, taking out the whole shell mold and breaking the shell mold to obtain a cast product; reprocessing the cast product to obtain a finished product; wherein printing materials of the 3D printing are made of a liquid mixture of photosensitive resin and ceramic powder, thereby improving production efficiency and reducing labor intensity as well as pollution.

Abstract: A manufacturing process includes creating 3D shells having a sprue; connecting the 3D shells together to arrange as rows of the 3D shells which are placed in a box filled with sand; placing the box in a vacuum chamber; activating a vacuum pump to compact the sand; activating an induction heater to preheat the box; shaking the box; introducing a molten material from an induction furnace into the sprue of each 3D shell until each 3D shell is filled with the molten material; pumping inert gas into the vacuum chamber to increase pressure in the vacuum chamber until an internal pressure of the vacuum chamber is greater than the atmospheric pressure; gradually cooling the box; taking the box out of the vacuum chamber; separating the 3D shells from the sand; cutting to obtain the 3D shells; rubbing each 3D shell; and removing the sand to finish 3D objects.

Abstract: A water inlet unit for an amphibious pump includes a housing having a connecting hole, a first water inlet pipe having a first end connected to the connecting hole and a second end provided with a first water inlet port, a second water inlet pipe having a first end connected to the connecting hole and a second end provided with a second water inlet port, a guide member mounted on the housing and connected to the connecting hole, and a tap detachably locked in the first water inlet port or the second water inlet port. Thus, the water inlet unit has a first water inlet port and a second water inlet port so that the water inlet unit and the amphibious pump are disposed at an upright or transverse state according to the practical space requirement.

Abstract: A water inlet unit for an amphibious pump includes a housing having a connecting hole, a first water inlet pipe having a first end connected to the connecting hole and a second end provided with a first water inlet port, a second water inlet pipe having a first end connected to the connecting hole and a second end provided with a second water inlet port, a guide member mounted on the housing and connected to the connecting hole, and a tap detachably locked in the first water inlet port or the second water inlet port. Thus, the water inlet unit has a first water inlet port and a second water inlet port so that the water inlet unit and the amphibious pump are disposed at an upright or transverse state according to the practical space requirement.

Abstract: A method of monitoring the conditions of a deep ultraviolet exposure station. In this invention, three usually separate conventional measurements including reticle blind accuracy, pre-alignment accuracy and overlay accuracy are integrated together. A patterned wafer having a photoresist layer thereon is provided. The photoresist layer on the wafer is exposed using a DUV exposure station. Relative positions of various markers are measured using an image-contrasting station. Hence, the reticle blind accuracy, the pre-alignment accuracy and the overlay accuracy are all determined in a single step.

Abstract: A method for monitoring dosage/focus/leveling is provided. A control wafer is provided and divided into several regions. Five of the regions near the center of the wafer are used to monitor normally. Other regions are used as dummy shots. When a situation of a stepper changes greatly, the dosage/focus/leveling of the control wafer is monitored using the dummy shots. In monitoring exposure dosage, the middlemost region is monitored. One of the five regions, which is the most central, is exposed with a low exposure energy to enhance sensitivity of critical dimension versus energy. Many points with small areas are developed in the centermost region to take sufficient samples. Since the developed points are close, effects from the nonuniformity of development and from the nonuniformity of the photoresist layer are prevented. In focus/leveling monitoring, a curve diagram of exposure dosage versus critical dimension is provided. An exposure parameter is taken at a range of the curve with a large slope.