Abstract: A package structure is disclosed herein. The package structure includes an insulating composite layer, a sealant disposed on the insulating composite layer, a first chip embedded in the sealant and having a plurality of first conductive pads exposed through the sealant, a circuit layer module having a plurality of circuit layers and a plurality of dielectric layers having a plurality of conductive vias, a second chip embedded in the circuit layer module and has a plurality of second conductive pads electrically connected to the circuit layers through the conductive vias, and a protecting layer having a plurality of openings disposed on the circuit layer module, in which the openings expose a portion of the circuit layer module.

Abstract: A manufacturing method of a circuit substrate is provided. A substrate is provided. A positive photoresist layer is coated on the substrate. Once exposure process is performed on the positive photoresist layer disposed on the substrate so as to simultaneously form concaves with at least two different depths.

Abstract: A package structure includes a redistribution structure, a chip, one or more structural reinforcing elements, and a protective layer. The redistribution structure includes a first circuit layer and a second circuit layer disposed over the first circuit layer. The first circuit layer is electrically connected to the second circuit layer. The chip is disposed over the redistribution structure and electrically connected to the second circuit layer. The one or more structural reinforcing elements are disposed over the redistribution structure. The structural reinforcing element has a Young's modulus in a range of of 30 to 200 GPa. The protective layer overlays the chip and a sidewall of the structural reinforcing element.

Abstract: In an embodiment, a miniaturize particulate matter detector includes a filter having a plurality of holes, and a concentration detector correspondingly disposed under the filter. The concentration detector has a detect area used for detecting a concentration of at least one miniaturize particulate matter. A manufacturing method of the filter is also provided.

Abstract: A method for manufacturing a circuit redistribution structure includes the following steps. A first dielectric is formed on a carrier. Conductive blind vias are formed in the first dielectric. A first circuit redistribution layer is formed on the first dielectric. A second dielectric is formed on the first dielectric. First and second holes are formed on the second dielectric. A trench is formed in the second dielectric to divide the second dielectric into first and second portions. A first portion of the first circuit redistribution layer and the first hole are disposed in the first portion of the second dielectric, and a second portion of the first circuit redistribution layer and the second hole are disposed in the second portion of the second dielectric. Conductive blind vias are formed in the first and second holes, and a second circuit redistribution layer is formed on the second dielectric.

Abstract: A method for manufacturing a circuit redistribution structure includes the following steps. A first dielectric is formed on a carrier. Conductive blind vias are formed in the first dielectric. A first circuit redistribution layer is formed on the first dielectric. A second dielectric is formed on the first dielectric. First and second holes are formed on the second dielectric. A trench is formed in the second dielectric to divide the second dielectric into first and second portions. A first portion of the first circuit redistribution layer and the first hole are disposed in the first portion of the second dielectric, and a second portion of the first circuit redistribution layer and the second hole are disposed in the second portion of the second dielectric. Conductive blind vias are formed in the first and second holes, and a second circuit redistribution layer is formed on the second dielectric.

Abstract: A bonding structure and a method of fabricating the same are provided. A first substrate having a first bonding element and a second substrate having a second bonding element are provided, wherein at least one of the first bonding element and the second bonding element is formed with an alloy. A bonding process is performed to bond the first bonding element with the second bonding element, wherein a diffusion liner is generated at the exposed, non-bonded surface of the bonding structure.

Abstract: A manufacturing method of a circuit substrate is provided. A substrate is provided. A positive photoresist layer is coated on the substrate. Once exposure process is performed on the positive photoresist layer disposed on the substrate so as to simultaneously form concaves with at least two different depths.

Abstract: A method for manufacturing a circuit redistribution structure includes the following steps. A first dielectric is formed on a carrier. Conductive blind vias are formed in the first dielectric. A first circuit redistribution layer is formed on the first dielectric. A second dielectric is formed on the first dielectric. First and second holes are formed on the second dielectric. A trench is formed in the second dielectric to divide the second dielectric into first and second portions. A first portion of the first circuit redistribution layer and the first hole are disposed in the first portion of the second dielectric, and a second portion of the first circuit redistribution layer and the second hole are disposed in the second portion of the second dielectric. Conductive blind vias are formed in the first and second holes, and a second circuit redistribution layer is formed on the second dielectric.

Abstract: A method for manufacturing a circuit redistribution structure includes the following steps. A first dielectric is formed on a carrier. Conductive blind vias are formed in the first dielectric. A first circuit redistribution layer is formed on the first dielectric. A second dielectric is formed on the first dielectric. First and second holes are formed on the second dielectric. A trench is formed in the second dielectric to divide the second dielectric into first and second portions. A first portion of the first circuit redistribution layer and the first hole are disposed in the first portion of the second dielectric, and a second portion of the first circuit redistribution layer and the second hole are disposed in the second portion of the second dielectric. Conductive blind vias are formed in the first and second holes, and a second circuit redistribution layer is formed on the second dielectric.

Abstract: A package structure includes a metal layer, a composite layer of a non-conductor inorganic material and an organic material, a sealant, a chip, a circuit layer structure, and an insulating protective layer. The composite layer of the non-conductor inorganic material and the organic material is disposed on the metal layer. The sealant is bonded on the composite layer of the non-conductor inorganic material and the organic material. The chip is embedded in the sealant, and the chip has electrode pads. The circuit layer structure is formed on the sealant and the chip. The circuit layer structure includes at least one dielectric layer and at least one circuit layer. The dielectric layer has conductive blind holes. The insulating protective layer is formed on the circuit layer structure. The insulating protective layer has openings, so as to expose parts of the surface of the circuit layer structure in the openings.

Abstract: An optical sensing module, adapted to sense a characteristic of an object by a sensing beam, comprises a carrying substrate, a transparent cover having a reflective surface thereon, a side wall, an optical grating, and an optical sensor. The reflective surface has a light-transmissive opening that exposes a part of the transparent cover. The side wall is disposed around the carrying substrate and is located between the carrying substrate and the transparent cover. The optical grating is disposed on the carrying substrate and a position of the optical grating corresponds to the light-transmissive opening. The optical sensor is disposed on the carrying substrate and is located at a side of the optical grating, wherein the carrying substrate, the side wall and the transparent cover form a vacuum chamber. The optical grating and the optical sensor are disposed in the vacuum chamber.

Abstract: In an embodiment, a miniaturize particulate matter detector includes a filter having a plurality of holes, and a concentration detector correspondingly disposed under the filter. The concentration detector has a detect area used for detecting a concentration of at least one miniaturize particulate matter. A manufacturing method of the filter is also provided.

Abstract: A miniaturized particulate matter detector that includes a filter and a concentration detector is provided. The filter has a plurality of holes, and the concentration detector is correspondingly disposed under the filter. The concentration detector has a detected area used to detect a concentration of at least one miniaturized particulate matter. A manufacturing method of the filter is also provided.

Abstract: A semiconductor device includes a substrate, a redistribution layer, a plurality of through-silicon vias (TSVs), and a plating seed layer. The substrate has a first surface and a second surface opposite to each other, and a plurality of cavities. The redistribution layer is disposed on the first surface, and the TSVs are respectively disposed in the cavities. The plating seed layer is disposed between the inner wall of each of the cavities and the corresponding TSVs. The anti-oxidation layer is disposed between the plating seed layer and the corresponding TSVs. The buffer layer covers the first surface and exposes the redistribution layers. Furthermore, a manufacturing method and a stacking structure of the semiconductor device are also provided.

Abstract: A semiconductor device includes a substrate, a redistribution layer, a plurality of through-silicon vias (TSVs), and a plating seed layer. The substrate has a first surface and a second surface opposite to each other, and a plurality of cavities. The redistribution layer is disposed on the first surface, and the TSVs are respectively disposed in the cavities. The plating seed layer is disposed between the inner wall of each of the cavities and the corresponding TSVs. The anti-oxidation layer is disposed between the plating seed layer and the corresponding TSVs. The buffer layer covers the first surface and exposes the redistribution layers. Furthermore, a manufacturing method and a stacking structure of the semiconductor device are also provided.

Abstract: Conductive plug structures suitable for stacked semiconductor device package is provided, wherein large contact region between the conductive plug structures and the corresponding pads of devices can be achieved, to reduce electrical impedance. Therefore, package structures such as photosensitive device packages using the conductive plug structures have superior electrical performance and reliability.

Abstract: An encapsulation of backside illumination photosensitive device including a circuit sub-mount, a backside illumination photosensitive device, a plurality of conductive terminals, and a heat dissipation structure is provided. The backside illumination photosensitive device includes an interconnection layer and a photosensitive device array, wherein the interconnection layer is located on the circuit sub-mount, and between the photosensitive device array and the circuit sub-mount. The conductive terminals are located between the interconnection layer and the circuit sub-mount to electrically connect the interconnection layer and the circuit sub-mount. The heat dissipation structure is located under the interconnection layer, and the heat dissipation structure and the photosensitive device array are respectively located at two opposite sides of the interconnection layer.

Abstract: Conductive plug structures suitable for stacked semiconductor device package is provided, wherein large contact region between the conductive plug structures and the corresponding pads of devices can be achieved, to reduce electrical impedance. Therefore, package structures such as photosensitive device packages using the conductive plug structures have superior electrical performance and reliability.

Abstract: An encapsulation of backside illumination photosensitive device including a circuit sub-mount, a backside illumination photosensitive device, a plurality of conductive terminals, and a heat dissipation structure is provided. The backside illumination photosensitive device includes an interconnection layer and a photosensitive device array, wherein the interconnection layer is located on the circuit sub-mount, and between the photosensitive device array and the circuit sub-mount. The conductive terminals are located between the interconnection layer and the circuit sub-mount to electrically connect the interconnection layer and the circuit sub-mount. The heat dissipation structure is located under the interconnection layer, and the heat dissipation structure and the photosensitive device array are respectively located at two opposite sides of the interconnection layer.