Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

Abstract: A multifunctional device includes a base (1), a housing (4) releasably secured to the base (1), a casing (2) concealed by the housing (4), and a toy (3) concealed by the casing (2). The base (1) includes a tray (13). The casing (2) includes first and second pad members (21, 22) arranged symmetrically. The second pad member (22) includes a ring member (24) having top projections (243) and recesses (244) alternating with the projections (243) and being complimentary to the projections (243) respectively. The toy (3) includes first and second half bodies (31, 32) arranged symmetrically, and a joining member (33). The toy (3) can be folded or unfolded. The housing (4) includes an open top (41), a blind bottom (42), a first flange (43) around the open top (41), and a second flange (44) around the blind bottom (42).

Abstract: An apparatus includes an image sensor and a processor. The image sensor may be configured to generate a sequence of video frames based on a targeted view of an environment. The processor may be configured to (A) perform an image stabilization on the sequence of video frames and (B) generate video analytics for the sequence of video frames, wherein the image stabilization comprises maintaining a horizon of the targeted view and is performed prior to generating the video analytics.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first image sensor disposed within a first substrate and a second image sensor disposed within a second substrate. The second substrate has a first side facing the first substrate. The first side includes angled surfaces defining one or more recesses within the first side. A band-pass filter is arranged between the first substrate and the second substrate and is configured to reflect electromagnetic radiation that is within a first range of wavelengths.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: A multifunctional device includes a base (1), a housing (4) releasably secured to the base (1), a casing (2) concealed by the housing (4), and a toy (3) concealed by the casing (2). The base (1) includes a tray (13). The casing (2) includes first and second pad members (21, 22) arranged symmetrically. The second pad member (22) includes a ring member (24) having top projections (243) and recesses (244) alternating with the projections (243) and being complimentary to the projections (243) respectively. The toy (3) includes first and second half bodies (31, 32) arranged symmetrically, and a joining member (33). The toy (3) can be folded or unfolded. The housing (4) includes an open top (41), a blind bottom (42), a first flange (43) around the open top (41), and a second flange (44) around the blind bottom (42).

Abstract: In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.

Abstract: An image sensor package is provided. The image sensor package comprises a package substrate, and an image sensor chip arranged over the package substrate. The integrated circuit device further comprises a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer, and an on-wafer shield structure spaced around a periphery of the image sensor chip. The height of the image sensor package can be reduced since a discrete cover glass or an infrared filter and corresponding intervening materials are no longer needed since being replaced by the build in protection layer. The size of the image sensor package can be reduced since a discrete light shield and corresponding intervening materials are no longer needed since being replaced by the build in on wafer light shield structure.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.

Abstract: A detachable, multifunctional rack for electronic devices includes a rectangular platform (1) including a lower board (10) secured to an underside, two sets of a plurality of hollow members (11) on two sides of the lower board (10) respectively, and a space (15) under the lower board (10); two L-shaped supports (2) mounted to two sides of the platform (1) respectively, each support (2) including a horizontal member (21) releasably secured to either side of the platform (1), a vertical member (22) releasably secured to the horizontal member (21), and a plurality of aligned, spaced tubular members (23) on one side of the horizontal member (21); and two pins (14) each passing through one set of the hollow members (11) and the tubular members (23) at either side of the platform (1) to fasten the platform (1) and the supports (2) together.

Abstract: An apparatus comprising a sensor and a processor. The sensor may be configured to capture a first video signal having a first field of view. The processor may be configured to generate a second video signal having a second field of view and a third video signal having a third field of view. The second video signal may generate the second field of view to include a first portion of the first video signal. The third video signal may generate the third field of view to include a second portion of the first video signal. The second portion may be processed to remove possible warping present on a bottom portion of the first video signal. The first and second portions may comprise an area less than the first field of view.

Abstract: A device for measuring solution concentration includes housing, a catadioptric structure, an electromagnetic radiation emitter and an electromagnetic radiation detector. The housing is formed with a detecting part for receiving a solution to be detected. The catadioptric structure is received in the housing, and includes a ray entrance portion, a first total internal reflection part, a second total internal reflection part and a ray exit portion. An accommodation part corresponds to the detecting part. The emitter is disposed at one side of the ray entrance portion, and a ray sequentially passes the ray entrance portion, the detecting part, the solution to be detected, and the first total internal reflection part. Then, the ray is totally internally reflected and converged to the second total internal reflection part, and is reflected again. Finally, the ray passes the ray exit portion and is received by the detector.