Patents by Inventor Cheng-Yu Shu

Cheng-Yu Shu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240347626
    Abstract: An LDMOS transistor device includes a stepped isolation structure over a substrate, a gate electrode disposed over a portion of the stepped isolation structure, a source region disposed in the substrate, and a drain region disposed in the substrate. The stepped isolation structure includes a first portion having a first thickness, and a second portion having a second thickness greater than the first thickness. The second portion includes dopants. The drain region is adjacent to the stepped isolation structure.
    Type: Application
    Filed: April 12, 2023
    Publication date: October 17, 2024
    Inventors: TSUNG-HUA YANG, CHENG-BO SHU, CHIA-TA HSIEH, PING-CHENG LI, PO-WEI LIU, SHIH-JUNG TU, TSUNG-YU YANG, YUN-CHI WU, YU-WEN TSENG
  • Patent number: 12114503
    Abstract: Some embodiments relate to an integrated chip that includes a first source/drain region and a second source/drain region disposed in a substrate. A plane that is substantially perpendicular to an upper surface of the substrate traverses the first source/drain region and the second source/drain region. Agate electrode extends over a channel region in the substrate between the first source/drain region and the second source/drain region. The gate electrode is separated from the channel region by way of a charge trapping dielectric structure. The charge trapping dielectric structure includes a tunnel dielectric layer, a charge trapping dielectric layer over the tunnel dielectric layer, and a blocking dielectric layer over the charge trapping dielectric layer. The channel region has a channel width measured perpendicularly to the plane, and the tunnel dielectric layer has different thicknesses at different respective points along the channel width.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: October 8, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jui-Yu Pan, Cheng-Bo Shu, Chung-Jen Huang, Jing-Ru Lin, Tsung-Yu Yang, Yun-Chi Wu, Yueh-Chieh Chu
  • Publication number: 20240258374
    Abstract: A method of forming a semiconductor arrangement includes forming a gate dielectric layer over a semiconductor layer. A gate electrode layer is formed over the gate dielectric layer. A first gate mask is formed over the gate electrode layer. The gate electrode layer is etched using the first gate mask as an etch template to form a first gate electrode. A first dopant is implanted into the semiconductor layer using the first gate mask and the first gate electrode as an implantation template to form a first doped region in the semiconductor layer.
    Type: Application
    Filed: February 5, 2024
    Publication date: August 1, 2024
    Inventors: Yun-Chi WU, Tsung-Yu YANG, Cheng-Bo SHU, Chien Hung LIU
  • Patent number: 11921530
    Abstract: A power supply system includes an output terminal, a power supply control chip, a power supply switch and a detection device. The power supply control chip is configured to adjust the amount of an input power providing to an electronic device by the power supply device. The power supply switch is configured to control the connection between the power supply device and the power supply control chip. The detection device is configured to detect whether the power supply control chip operates normally. When the power supply control chip operates abnormally, the detection device controls the connection between the power supply device and the power supply control chip through the power supply switch for restarting the power supply control chip. The power supply control chip, the power supply switch and the detection device are disposed in an enclosed space.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: March 5, 2024
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Shih-Chung Wang, Cheng-Yu Shu, Wei-Chieh Lin
  • Publication number: 20220317713
    Abstract: A power supply system includes an output terminal, a power supply control chip, a power supply switch and a detection device. The power supply control chip is configured to adjust the amount of an input power providing to an electronic device by the power supply device. The power supply switch is configured to control the connection between the power supply device and the power supply control chip. The detection device is configured to detect whether the power supply control chip operates normally. When the power supply control chip operates abnormally, the detection device controls the connection between the power supply device and the power supply control chip through the power supply switch for restarting the power supply control chip. The power supply control chip, the power supply switch and the detection device are disposed in an enclosed space.
    Type: Application
    Filed: July 22, 2021
    Publication date: October 6, 2022
    Inventors: Shih-Chung Wang, Cheng-Yu Shu, Wei-Chieh Lin