Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A method for promoting growth of a probiotic microorganism includes cultivating the probiotic microorganism in a growth medium containing a fermented culture of lactic acid bacterial strains that include Lactobacillus salivarius subsp. salicinius AP-32 deposited at the China Center for Type Culture Collection (CCTCC) under CCTCC M 2011127, Lactobacillus plantarum LPL28 deposited at the China General Microbiological Culture Collection Center (CGMCC) under CGMCC 17954, Lactobacillus acidophilus TYCA06 deposited at the CGMCC under CGMCC 15210, and Bifidobacterium longum subsp. infantis BLI-02 deposited at the CGMCC under CGMCC 15212.

Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.

Abstract: A multiple die container load port may include a housing with an opening, and an elevator to accommodate a plurality of different sized die containers. The multiple die container load port may include a stage supported by the housing and moveable within the opening of the housing by the elevator. The stage may include one or more positioning mechanisms to facilitate positioning of the plurality of different sized die containers on the stage, and may include different portions movable by the elevator to accommodate the plurality of different sized die containers. The multiple die container load port may include a position sensor to identify one of the plurality of different sized die containers positioned on the stage.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: A separator for a lithium battery and a method for manufacturing the same are provided. The separator includes a substrate layer and a coating layer. The substrate layer is a polyolefin porous film and has a substrate thickness ranging from 10 to 30 micrometers. The coating layer is coated on the substrate layer, and has a coating layer thickness ranging from 1 to 5 micrometers. The coating layer includes a heat-resistant resin material and a plurality of inorganic ceramic particles glued in the heat-resistant resin material. The heat-resistant resin material has a melting point (Tm) or a glass transition temperature (Tg) of not less than 150° C. An average particle size of the inorganic ceramic particles is 10% to 40% of the coating layer thickness of the coating layer. The inorganic ceramic particles are stacked in the coating layer with a height of at least three layers.

Abstract: A protection tape includes a base film, an antistatic layer and an adhesive layer. The antistatic layer is located on the base film. The surface impedance of the antistatic layer is less than 1E+9?, and the antistatic layer includes a first resin and conductive materials dispersed in the first resin. The conductive materials include at least one of metal ions and carbon. The adhesive layer is located on a corona treated surface of the base film. The protection tape provided by the present disclosure has the advantage of having resistant to corona treatment.

Abstract: The present disclosure provides a connecting device and a lamp system. The connecting device is used to connect multiple lamps to form the lamp system. The connecting device includes a connecting element, a cover, and a shell. The cover is mounted on the connecting element and includes at least two first assembling members. The shell is detachably mounted on the cover. The shell includes a side wall, an opening, multiple gateways, and at least two second assembling members. The side wall surrounds a space. The opening and the gateways all are formed on a top of the side wall and communicate with the space. A portion of each of the lamps is received in one of the gateways. The second assembling members are disposed on the side wall and face each other in a radial line of the shell, and respectively engage with the first assembling members.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: A catadioptric optical membrane, which is disposed on a surface of a substrate, includes a reflection membrane and a matting membrane. The reflection membrane is disposed on an effective optical path area of the substrate and includes a reflection metal membrane and a reflection oxidation membrane. The reflection oxidation membrane includes a first reflection oxidation membrane and a second reflection oxidation membrane. The reflection metal membrane is farther away from the substrate than the first reflection oxidation membrane. The second reflection oxidation membrane is farther away from the substrate than the reflection metal membrane. The matting membrane is disposed on a non-effective optical path area of the substrate. The matting membrane includes a deep-color membrane and a first anti-reflection membrane. The deep-color membrane includes a deep-color metal membrane and a deep-color oxidation membrane. The deep-color membrane is farther away from the substrate than the first anti-reflection membrane.

Abstract: A memory device includes a memory bank with a memory cell connected to a local bit line and a word line. A first local data latch is connected to the local bit line and has an enable terminal configured to receive a first local clock signal. A word line latch is configured to latch a word line select signal, and has an enable terminal configured to receive a second local clock signal. A first global data latch is connected to the first local data latch by a global bit line, and the first global data latch has an enable terminal configured to receive a global clock signal. A global address latch is connected to the word line latch and has an enable terminal configured to receive the global clock signal. A bank select latch is configured to latch a bank select signal, and has an enable terminal configured to receive the second local clock signal.

Abstract: Disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. In one embodiment, a method for forming a semiconductor device, includes: depositing a protective coating on a first polysilicon layer; forming an epitaxial layer on the protective coating; and depositing a second polysilicon layer over the epitaxial layer, wherein the protective coating comprises a third polysilicon layer, wherein the third polysilicon layer is deposited at a first temperature in a range of 600-700 degree Celsius, and wherein the third polysilicon layer in the protect coating is configured to protect the first polysilicon layer when the second polysilicon layer is etched.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: Aspects of the present disclosure provide a method for training a predictor that predicts performance of a plurality of machine learning (ML) models on platforms. For example, the method can include converting each of the ML models into a plurality of instructions or the instructions and a plurality of intermediate representations (IRs). The method can also include simulating execution of the instructions corresponding to each of the ML models on a platform and generating instruction performance reports. Each of the instruction performance reports can be associated with performance of the instructions corresponding to one of the ML models that are executed on the platform. The method can also include training the predictor with the instructions or the IRs as learning features and the instruction performance reports as learning labels, compiling the predictor into a library file, and storing the library file in a storage device.

Abstract: The disclosure provides a power management method. The power management method is applicable to an electronic device. The electronic device is electrically coupled to an adapter, and includes a system and a battery. The adapter has a feed power. The battery has a discharge power. The power management method of the disclosure includes: reading a power value of the battery; determining a state of the system; and discharging power to the system, when the system is in a power-on state and the power value is greater than a charging stopping value, by using the battery, and controlling, according to the discharge power and the feed power, the adapter to selectively supply power to the system. The disclosure further provides an electronic device using the power management method.

Abstract: The present disclosure provides a connecting device and a lamp system. The connecting device is used to connect multiple lamps to form the lamp system. The connecting device includes a connecting element, a cover, and a shell. The cover is mounted on the connecting element and includes at least two first assembling members. The shell is detachably mounted on the cover. The shell includes a side wall, an opening, multiple gateways, and at least two second assembling members. The side wall surrounds a space. The opening and the gateways all are formed on a top of the side wall and communicate with the space. A portion of each of the lamps is received in one of the gateways. The second assembling members are disposed on the side wall and face each other in a radial line of the shell, and respectively engage with the first assembling members.

Abstract: A multiple die container load port may include a housing with an opening, and an elevator to accommodate a plurality of different sized die containers. The multiple die container load port may include a stage supported by the housing and moveable within the opening of the housing by the elevator. The stage may include one or more positioning mechanisms to facilitate positioning of the plurality of different sized die containers on the stage, and may include different portions movable by the elevator to accommodate the plurality of different sized die containers. The multiple die container load port may include a position sensor to identify one of the plurality of different sized die containers positioned on the stage.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A protection tape includes a base film, an antistatic layer and an adhesive layer. The antistatic layer is located on the base film. The surface impedance of the antistatic layer is less than 1E+9?, and the antistatic layer includes a first resin and conductive materials dispersed in the first resin. The conductive materials include at least one of metal ions and carbon. The adhesive layer is located on a corona treated surface of the base film. The protection tape provided by the present disclosure has the advantage of having resistant to corona treatment.