Abstract: A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.

Abstract: A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD but not over the first conductive component. A second ILD is formed over the first conductive component and over the first ILD. An opening is etched in the second ILD. The opening is at least partially aligned with the first conductive component. The first dielectric layer protects portions of the first ILD located therebelow from being etched. The opening is filled with a conductive material to form a second conductive component in the opening.

Abstract: An interconnect structure is provided. The interconnect structure includes a first via in a first dielectric layer, a first metal line on and electrically connected to the first via, a first etching stop layer over the first dielectric layer, a second metal line over the first etching stop layer, and an encapsulating layer. The encapsulating layer includes a first vertical portion along a sidewall of the first metal line, a horizontal portion along an upper surface of the first etching stop layer, and a second vertical portion along a sidewall of the second metal line. The interconnect structure also includes a second dielectric layer nested within the encapsulating layer.

Abstract: A stand adjustment device has a tripod-connecting member, a connecting seat, a distal clamping plate, a boom-connecting tube, a locking shaft, and a manual operating member. The connecting seat is rotatably located around the tripod-connecting member. The distal clamping plate is detachably attached to a side of the connecting seat. One end of the locking shaft is movably disposed in the boom-connecting tube. The boom is slidably mounted through the boom-connecting tube and the locking shaft. The locking shaft is slidably mounted through the boom-connecting tube, the distal clamping plate, and the connecting seat such that the boom-connecting tube is rotatable relative to the connecting seat. The manual operating member and the locking shaft are configured to clamp the boom-connecting tube, the distal clamping plate, and the connecting seat therebetween into a locked condition.

Abstract: An interconnect structure is provided. The interconnect structure includes a first metal line and a second metal line surrounded by a first dielectric layer, a dielectric block over a portion of the first dielectric layer between the first metal line and the second metal line, and a second dielectric layer over the dielectric block, the first metal line and the second metal line. A bottom surface of the second dielectric layer is lower than a top surface of the dielectric block. The interconnect structure also includes a first via surrounded by the second dielectric layer and electrically connected to the first metal line.

Abstract: Some embodiments of the present disclosure relate to an integrated chip, including a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. A pair of metal lines are disposed over the dielectric layer and laterally spaced apart from one another by a cavity. A barrier layer structure extends along nearest neighboring sidewalls of the pair of metal lines such that the cavity is defined by inner sidewalls of the barrier layer structure and a top surface of the dielectric layer.

Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: A die sorter tool may include a first conveyor, and a first lane to receive, from one or more load ports and via the first conveyor, a carrier with a set of dies. The die sorter tool may include a die flip module to receive the carrier from the first lane, manipulate one or more dies of the set of dies by changing orientations of the one or more dies, and return the one or more dies to the carrier after manipulating the one or more dies and without changing positions of the one or more dies within the carrier. The die sorter tool may include a second conveyor, and a second lane to receive, via the second conveyor, the carrier from the die flip module, and provide, via the first conveyor, the carrier to the one or more load ports.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A stand adjustment device has a tripod-connecting member, a connecting seat, a proximal clamping plate, a boom-connecting tube, a locking shaft, and a manual operating member. The connecting seat is rotatably located around the tripod-connecting member. The proximal clamping plate is detachably attached to a side of the connecting seat. One end of the locking shaft is movably disposed in the boom-connecting tube. The boom is slidably mounted through the boom-connecting tube and the locking shaft. The locking shaft is slidably mounted through the boom-connecting tube, the proximal clamping plate, and the connecting seat such that the boom-connecting tube is rotatable relative to the connecting seat. The manual operating member and the locking shaft are configured to clamp the boom-connecting tube, the proximal clamping plate, and the connecting seat therebetween into a locked condition.

Abstract: A flow guiding device in an immersion-cooled chassis of a server comprises at least one deflector located above a chip on a mainboard in the chassis, each deflector comprises a first end for mounting to the mainboard above the chip and a second end inclined away from the mainboard. The first end is immersed in coolant, the second end is higher than the first end; the deflector further comprises a hollow part including multiple through holes for interrupting upward movement vapor bubbles generated by the hot chip, which reduces probability of the vapor bubbles escaping from the coolant liquid and the chassis. A liquid-cooled chassis having the flow guiding device is also disclosed.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: An electronic device including an electronic unit and a redistribution layer is disclosed. The electronic unit has connection pads. The redistribution layer is electrically connected to the electronic unit and includes a first insulating layer, a first metal layer and a second insulating layer. The first insulating layer is disposed on the electronic unit and has first openings disposed corresponding to the connection pads. The first metal layer is disposed on the first insulating layer and electrically connected to the electronic unit through the connection pads. The second insulating layer is disposed on the first metal layer. The first insulating layer includes first filler particles, and the second insulating layer includes second filler particles. The first filler particles have a first maximum particle size, the second filler particles have a second maximum particle size, and the second maximum particle size is greater than the first maximum particle size.

Abstract: A package structure is provided. The package structure includes a conductive structure having a first portion and a second portion, and the second portion is wider than the first portion. The package structure also includes a semiconductor chip laterally separated from the conductive structure. The package structure further includes a protective layer laterally surrounding the conductive structure and the semiconductor chip. The first portion of the conductive structure has a sidewall extending from the second portion to a surface of the protective layer. The protective layer laterally surrounds an entirety of the sidewall of the first portion.

Abstract: A foldable stand has a base, a riser, and a switching mechanism. The riser is located on the base. The switching mechanism connects the base and the riser such that the riser selectively pivots relative to the base from an upright position to a folded position. The switching mechanism has a locked status and a released status. In the locked status, the switching mechanism prevents the riser from pivoting relative to the base. In the released status, the switching mechanism allows the riser to pivot relative to the base from an upright position to a folded position. The switching mechanism is configured to be switched from the locked status to the released status by rotation of the riser around a centerline of the riser.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A chip package structure is provided. The chip package structure includes a first substrate. The chip package structure includes a conductive via structure passing through the first substrate. The chip package structure includes a barrier layer over a surface of the first substrate. The chip package structure includes an insulating layer over the barrier layer. The chip package structure includes a conductive pad over the insulating layer. The conductive pad has a first portion passing through the insulating layer and the barrier layer and connected to the conductive via structure. The chip package structure includes a conductive bump over the conductive pad. The chip package structure includes a second substrate. The chip package structure includes an underfill layer between the first substrate and the second substrate.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.