Patents by Inventor Chenguang Gong
Chenguang Gong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11252353Abstract: A low-noise amplifier is disclosed. The amplifier includes a signal amplifier having an amplifier signal output, a first filter capacitor, a buffer amplifier having a buffer amplifier input and a buffer amplifier output; and a switching network. The first filter capacitor has first and second terminals. The second terminal is connected to a power rail. The amplifier signal output is connected to the buffer amplifier input by a first direct current path and the buffer amplifier output to the first terminal of the first filter capacitor by a second direct current path during a first time period. The amplifier signal output is connected directly to the first terminal of the first filter capacitor by a third direct current path during a second time period, and the amplifier signal output to the first terminal of the first filter capacitor through a resistor during a third time period.Type: GrantFiled: June 29, 2017Date of Patent: February 15, 2022Assignee: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Alberto M. Magnani
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Patent number: 11107847Abstract: A pixel sensor, an imaging array that includes such pixel sensors, and a method for operating an imaging array are disclosed. The pixel sensor includes a transfer gate that connects a photodiode to a floating diffusion node in response to a transfer signal, a reset circuit, and a controller. The reset circuit is adapted to apply either a first potential or a second potential to the floating diffusion node, the second potential being less than the first potential. The controller is configured to cause the reset circuit to apply the first potential to the floating diffusion node while the transfer gate is conducting just prior to a start of an accumulation phase, and then apply the second potential to the floating diffusion node after the transfer gate is rendered non-conducting, the second potential is less than the first potential.Type: GrantFiled: April 19, 2019Date of Patent: August 31, 2021Assignee: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Stephen W. Mims, Khai Nguyen
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Patent number: 11089244Abstract: An imaging array and a pixel sensor are disclosed. One of the pixel sensors in the imaging array includes a photodiode having a cathode connected to an electron storage node and an anode connected to a hole storage node. An overflow path connects the electron storage node via an overflow gate that allows electrons to leak off of the electron storage node into the overflow path if the electron storage node has a potential less than a leakage potential. A floating diffusion node is connected to the electron storage node by a transfer gate and the overflow path by an overflow path gate. A hole storage node reset gate connects the hole storage node to ground. A hole storage capacitor is connected between the hole storage node and ground, and an overflow path coupling capacitor connects the hole storage node to the overflow path.Type: GrantFiled: December 9, 2019Date of Patent: August 10, 2021Assignee: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Paul G. Lim, Alberto M. Magnani
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Publication number: 20210176414Abstract: An imaging array and a pixel sensor are disclosed. One of the pixel sensors in the imaging array includes a photodiode having a cathode connected to an electron storage node and an anode connected to a hole storage node. An overflow path connects the electron storage node via an overflow gate that allows electrons to leak off of the electron storage node into the overflow path if the electron storage node has a potential less than a leakage potential. A floating diffusion node is connected to the electron storage node by a transfer gate and the overflow path by an overflow path gate. A hole storage node reset gate connects the hole storage node to ground. A hole storage capacitor is connected between the hole storage node and ground, and an overflow path coupling capacitor connects the hole storage node to the overflow path.Type: ApplicationFiled: December 9, 2019Publication date: June 10, 2021Applicant: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Paul G. Lim, Alberto M. Magnani
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Patent number: 10863130Abstract: An imaging array and method for using the same that are adapted for backside illuminated imaging arrays utilizing a global shutter are disclosed. The imaging array includes a plurality of pixel sensors having an ordered array of pixel sensors. Each pixel sensor includes a main photodiode and a correction photodiode. A controller resets all of the main photodiodes at a first time that is the same for all of the pixel sensors, resets all of the correction photodiodes at a second time that is the same for all of the pixel sensors after the first time, and sequentially reads out the pixel sensors. The pixel sensor is read out at a third time that is different for different ones of the pixel sensors. A correction charge is measured that corrects for the different readout times.Type: GrantFiled: January 25, 2017Date of Patent: December 8, 2020Assignee: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Alberto M. Magnani
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Publication number: 20200335538Abstract: A pixel sensor, an imaging array that includes such pixel sensors, and a method for operating an imaging array are disclosed. The pixel sensor includes a transfer gate that connects a photodiode to a floating diffusion node in response to a transfer signal, a reset circuit, and a controller. The reset circuit is adapted to apply either a first potential or a second potential to the floating diffusion node, the second potential being less than the first potential. The controller is configured to cause the reset circuit to apply the first potential to the floating diffusion node while the transfer gate is conducting just prior to a start of an accumulation phase, and then apply the second potential to the floating diffusion node after the transfer gate is rendered non-conducting, the second potential is less than the first potential.Type: ApplicationFiled: April 19, 2019Publication date: October 22, 2020Applicant: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Stephen W. Mims, Khai Nguyen
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Publication number: 20200228731Abstract: A low-noise amplifier is disclosed. The amplifier includes a signal amplifier having an amplifier signal output, a first filter capacitor, a buffer amplifier having a buffer amplifier input and a buffer amplifier output; and a switching network. The first filter capacitor has first and second terminals. The second terminal is connected to a power rail. The amplifier signal output is connected to the buffer amplifier input by a first direct current path and the buffer amplifier output to the first terminal of the first filter capacitor by a second direct current path during a first time period. The amplifier signal output is connected directly to the first terminal of the first filter capacitor by a third direct current path during a second time period, and the amplifier signal output to the first terminal of the first filter capacitor through a resistor during a third time period.Type: ApplicationFiled: June 29, 2017Publication date: July 16, 2020Applicant: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Alberto M. Magnani
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Patent number: 10484618Abstract: An imaging array having a plurality of pixel sensors connected to a bit line is disclosed. Each pixel sensor includes a capacitive overflow pixel sensor characterized by an overflow capacitor having a switching terminal, and a floating diffusion node, a buffer amplifier that connects the floating diffusion node to a bit line in response to row select signal, and a switch that connects the switching terminal to either ground or a boost voltage. The imaging array also includes a switch controller that controls the switch and is connected to the bit line, the switch controller determining a voltage on the bit line, the switch controller connecting the switching terminal to the boost voltage during an exposure of the pixel sensor to light and to either ground or the boost voltage during a readout of charge stored on the overflow capacitor depending on the voltage on the bit line.Type: GrantFiled: October 24, 2018Date of Patent: November 19, 2019Assignee: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Paul G. Lim, Alberto M. Magnani
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Publication number: 20190335130Abstract: An imaging array and method for using the same that are adapted for backside illuminated imaging arrays utilizing a global shutter are disclosed. The imaging array includes a plurality of pixel sensors having an ordered array of pixel sensors. Each pixel sensor includes a main photodiode and a correction photodiode. A controller resets all of the main photodiodes at a first time that is the same for all of the pixel sensors, resets all of the correction photodiodes at a second time that is the same for all of the pixel sensors after the first time, and sequentially reads out the pixel sensors. The pixel sensor is read out at a third time that is different for different ones of the pixel sensors. A correction charge is measured that corrects for the different readout times.Type: ApplicationFiled: January 25, 2017Publication date: October 31, 2019Applicant: BAE Systems Imaging Solutions Inc.Inventors: Hung T. Do, Chenguang Gong, Alberto M. Magnani
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Patent number: 9206479Abstract: Disclosed are compositions and methods for identifying binding sites of targets of Stau1-mediated mRNA decay; methods and compositions for treating subjects with conditions resulting from Stau1-mediated mRNA decay, and method of screening for therapeutic agents. Also disclosed is the new pathway as a means for cells to down-regulate the expression of Stau1-binding mRNAs.Type: GrantFiled: February 9, 2012Date of Patent: December 8, 2015Assignee: University of RochesterInventors: Lynne E. Maquat, Chenguang Gong
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Patent number: 8897342Abstract: A master modem is configured to generate a carrier signal for transmission over a wired connection. A slave modem is configured to change an impedance of the wired connection to alter generation of the carrier signal by the master modem. The impedance of the wired connection is changed based on data to be provided by the slave modem. The master modem can demodulate its own carrier signal to obtain the data provided by the slave modem. The impedance of the wired connection could be changed by changing an impedance of a transformer winding or inductor of the slave modem, where the transformer winding or inductor is coupled to the wired connection. The impedance of the wired connection could also be changed by changing a reactance of a circuit coupled to the wired connection.Type: GrantFiled: August 4, 2011Date of Patent: November 25, 2014Assignee: National Semiconductor CorporationInventors: Lawrence H. Zuckerman, Perry I. Tsao, Thomas Yang, Keiichi McGuire, Chenguang Gong, Ravichander Bairi
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Publication number: 20130317087Abstract: Disclosed are compositions and methods for identifying binding sites of targets of Staul-mediated mRNA decay; methods and compositions for treating subjects with conditions resulting from Staul-mediated mRNA decay, and method of screening for therapeutic agents. Also disclosed is the new pathway as a means for cells to down-regulate the expression of Staul-binding mRNAs.Type: ApplicationFiled: February 9, 2012Publication date: November 28, 2013Applicant: UNIVERSITY OF ROCHESTERInventors: Lynne E. Maquat, Chenguang Gong
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Publication number: 20130034137Abstract: A master modem is configured to generate a carrier signal for transmission over a wired connection. A slave modem is configured to change an impedance of the wired connection to alter generation of the carrier signal by the master modem. The impedance of the wired connection is changed based on data to be provided by the slave modem. The master modem can demodulate its own carrier signal to obtain the data provided by the slave modem. The impedance of the wired connection could be changed by changing an impedance of a transformer winding or inductor of the slave modem, where the transformer winding or inductor is coupled to the wired connection. The impedance of the wired connection could also be changed by changing a reactance of a circuit coupled to the wired connection.Type: ApplicationFiled: August 4, 2011Publication date: February 7, 2013Applicant: NATIONAL SEMICONDUCTOR CORPORATIONInventors: Lawrence H. Zuckerman, Perry I. Tsao, Thomas Yang, Keiichi McGuire, Chenguang Gong, Ravichander Bairi