Abstract: A laser diode includes an original substrate having a substrate coefficient of thermal expansion, an epitaxy structure formed on the original substrate, and a composite multi-layer metal board disposed below the original substrate and at least including a first metal layer and a second metal layer. The first metal layer and the second metal layer are stacked, a material of the first metal layer is different from a material of the second metal layer, and the composite multi-layer metal board has a modified coefficient of thermal expansion. The original substrate has an initial thickness as the epitaxy structure is grown thereon, the original substrate is thinned to a combining thickness for attaching the composite multi-layer metal board, and the modified coefficient of thermal expansion of the composite multi-layer metal board is proximate to the substrate coefficient of thermal expansion.

Abstract: An over-current protection device includes a heat-sensitive layer and an electrode layer. The electrode layer includes a top metal layer and a bottom metal layer, and the heat-sensitive layer attached therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a conductive filler. The polymer matrix includes a polyolefin-based homopolymer and a polyolefin-based copolymer. The polyolefin-based homopolymer has a first coefficient of thermal expansion (CTE), and the polyolefin-based copolymer has a second CTE lower than the first CTE. The polyolefin-based homopolymer and the polyolefin-based copolymer together form an interpenetrating polymer network (IPN).

Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, a conductive filler, and a titanium-containing dielectric filler. The polymer matrix has a fluoropolymer. The titanium-containing dielectric filler has a compound represented by a general formula of MTiO3, wherein the M represents transition metal or alkaline earth metal. The total volume of the PTC material layer is calculated as 100%, and the titanium-containing dielectric filler accounts to for 5-15% by volume of the PTC material layer.

Abstract: A deflecting plate includes a silicon-on-insulator (SOI) substrate. The SOI substrate includes: an insulator layer having a top surface and a bottom surface; a device layer coupled to the insulator layer at the top surface, wherein multiple deflecting apertures are disposed in the device layer, each of which extending from a top open end to a bottom open end through the device layer, and wherein the bottom open end is coplanar with the top surface of the insulator layer; and a handle substrate coupled to the insulator layer at the bottom surface, wherein a cavity is disposed in the handle substrate and extends from a cavity open end to a cavity bottom wall, and wherein the bottom wall is coplanar with the top surface of the insulator layer, such that the bottom open end of each deflecting aperture is exposed to the cavity.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a first conductive filler. The polymer matrix includes a polyolefin-based polymer and a fluoropolymer. The fluoropolymer has a melt flow index higher than 1.9 g/10 min, and the polyolefin-based polymer and the fluoropolymer together form an interpenetrating polymer network (IPN). The first conductive filler has a metal-ceramic compound dispersed in the polymer matrix.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, and a conductive filler. The polymer matrix has a fluoropolymer. The total volume of the PTC material layer is calculated as 100%, and the fluoropolymer accounts for 47-62% by volume of the PTC material layer. The fluoropolymer has a melt viscosity higher than 3000 Pa·s.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 33% to 42%.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 48% to 55%. The conductive filler has a metal-ceramic compound.

Abstract: A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening.

Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.

Abstract: A method includes forming a reconstructed wafer, which includes placing a plurality of package components over a carrier, forming an interconnect structure over and electrically interconnecting the plurality of package components, forming top electrical connectors over and electrically connecting to the interconnect structure, and forming alignment marks at a same level as the top electrical connectors. Probe pads in the top electrical connectors are probed, and the probing is performed using the alignment marks for aligning to the probe pads. An additional package component is bonded to the reconstructed wafer through solder regions. The solder regions are physically joined to the top electrical connectors.

Abstract: The present invention discloses a signal output circuit applying bandwidth broadening mechanism for an image signal transmission apparatus that includes a first driving circuit and a second driving circuit. The first driving circuit includes a continuous time linear equalizer (CTLE) and is configured to receive a digital input signal to perform a high frequency enhancement thereon to increase a bandwidth of the digital input signal to generate a first output signal, in which a zero point and two poles of a frequency response of the first driving circuit are determined by circuit parameters thereof. The second driving circuit is configured to receive and amplify the first output signal to generate a second output signal for an image receiving apparatus.

Abstract: The present invention discloses a signal output circuit applying bandwidth broadening mechanism for an image signal transmission apparatus that includes a first driving circuit and a second driving circuit. The first driving circuit includes a continuous time linear equalizer (CTLE) and is configured to receive a digital input signal to perform a high frequency enhancement thereon to increase a bandwidth of the digital input signal to generate a first output signal, in which a zero point and two poles of a frequency response of the first driving circuit are determined by circuit parameters thereof. The second driving circuit is configured to receive and amplify the first output signal to generate a second output signal for an image receiving apparatus.

Abstract: A high voltage tolerant output circuit includes a boost circuit, a first bias circuit, and a buffer circuit. The boost circuit includes a first transistor and an output node. A first terminal of the first transistor is coupled with the output node. The first bias circuit is coupled with the output node and a control terminal of the first transistor, and for dividing the output voltage of the output node. The first bias circuit is further configured to transmit the divided output voltage to the control terminal of the first transistor. The buffer circuit is coupled with a second terminal of the first transistor, and for setting a first voltage of the second terminal of the first transistor. The output voltage is positive correlated to the first voltage, and a maximum value of the output voltage is higher than or equal to a maximum value of the first voltage.

Abstract: Disclosed is an open loop fractional frequency divider including an integer divider, a control circuit, and a phase interpolator. The integer divider processes an input clock according to the setting of a target frequency to generate a first frequency-divided clock and a second frequency-divided clock. The control circuit generates a coarse-tune control signal and a fine-tune control signal according to the setting. The phase interpolator generates an output clock according to the first frequency-divided clock, the second frequency-divided clock, and the two control signals. The two control signals are used for determining a first current, and their reversed signals are used for determining a second current. The phase interpolator controls a contribution of the first (second) frequency-divided clock to the generation of the output clock according to the first (second) frequency-divided clock, the reversed signal of the first (second) frequency-divided clock, and the first (second) current.

Abstract: Disclosed is an open loop fractional frequency divider including an integer divider, a control circuit, and a phase interpolator. The integer divider processes an input clock according to the setting of a target frequency to generate a first frequency-divided clock and a second frequency-divided clock. The control circuit generates a coarse-tune control signal and a fine-tune control signal according to the setting. The phase interpolator generates an output clock according to the first frequency-divided clock, the second frequency-divided clock, and the two control signals. The two control signals are used for determining a first current, and their reversed signals are used for determining a second current. The phase interpolator controls a contribution of the first (second) frequency-divided clock to the generation of the output clock according to the first (second) frequency-divided clock, the reversed signal of the first (second) frequency-divided clock, and the first (second) current.

Abstract: A high voltage tolerant output circuit includes a boost circuit, a first bias circuit, and a buffer circuit. The boost circuit includes a first transistor and an output node. A first terminal of the first transistor is coupled with the output node. The first bias circuit is coupled with the output node and a control terminal of the first transistor, and for dividing the output voltage of the output node. The first bias circuit is further configured to transmit the divided output voltage to the control terminal of the first transistor. The buffer circuit is coupled with a second terminal of the first transistor, and for setting a first voltage of the second terminal of the first transistor. The output voltage is positive correlated to the first voltage, and a maximum value of the output voltage is higher than or equal to a maximum value of the first voltage.

Abstract: A clock and data recovery apparatus is provided that includes a sampling circuit, a storage circuit and a determining circuit. The sampling circuit includes sampling units each sampling a received data according to one of reference clock signals to generate a sampling result. The storage circuit includes FIFO storage units configured to store the sampling result of the received data corresponding to different time spots. The determining circuit is configured to set a certain number of received data as a reference data pattern, to adjust a starting position of a sampling window according to a transition point of sampled values within the reference data pattern when only one data transition exists therein and adjust a length of the sampling window according to an amount of high state sample points of the sampled values within the reference data pattern when more than one data transitions exist therein.