Abstract: In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, AlxGayN (0<x<1; x+y=1) and a dielectric layer, and a diamond layer section which may include polycrystalline diamond. The IC includes: a GaN-based field effect transistor (FET) integrated with a portion of the GaN-based substrate, and a diamond-based FET integrated with a portion of the diamond layer section, the diamond FET being electrically coupled to the GaN-based FET and situated over or against a surface region of the GaN-based substrate.

Abstract: The present disclosure discloses a process for evaluating a corrosion inhibitor based on a high-throughput corrosion chip. In the present disclosure, a high-throughput corrosion chip is first prepared by using a chip spotter, and only a corrosion inhibitor and a corrosive substance need to be spotted on a metal sample to quickly, efficiently, and accurately evaluate performance of a corrosion inhibitor formulation, to meet corrosion test conditions such as different substances, different concentrations, and different corrosion duration; and then a corrosion degree of each measurement point in the high-throughput corrosion chip is identified and quantified by using a laser scanning confocal microscope. The high-throughput corrosion chip prepared by using the foregoing method can bear 10-1000 measurement points, and these measurement points can reflect corrosion effects of different inhibitor formulations in different corrosion duration.

Abstract: In certain examples, methods and semiconductor structures are directed to a method comprising steps of forming by monolithically integrating or seeding via polycrystalline diamond (PCD) particles on a GaN-based layer characterized as including GaN in at least a surface region of the GaN-based layer. After the step of seeding, the PCD particles are grown under a selected pressure to form a diamond layer section and to provide a semi-conductive structure that includes the diamond layer section integrated on or against the surface region of the GaN-based layer.

Abstract: In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, AlxGayN (0<x<1; x+y=1) and a dielectric layer, and a diamond layer section which may include polycrystalline diamond. The IC includes: a GaN-based field effect transistor (FET) integrated with a portion of the GaN-based substrate, and a diamond-based FET integrated with a portion of the diamond layer section, the diamond FET being electrically coupled to the GaN-based FET and situated over or against a surface region of the GaN-based substrate.