Patents by Inventor Chentsau (Chris) Ying

Chentsau (Chris) Ying has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS OF PATTERNING NICKEL SILICIDE LAYERS ON A SEMICONDUCTOR DEVICE
    Publication number: 20200135492
    Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.
    Type: Application
    Filed: October 25, 2018
    Publication date: April 30, 2020
    Inventors: JONG MUN KIM, CHENTSAU CHRIS YING, HE REN, SRINIVAS D. NEMANI, ELLIE YIEH
  • Methods For Graphene Formation
    Publication number: 20200105525
    Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.
    Type: Application
    Filed: September 27, 2019
    Publication date: April 2, 2020
    Inventors: Jie Zhou, Erica Chen, Qiwei Liang, Chentsau Chris Ying, Srinivas D. Nemani, Ellie Y. Yieh
  • Methods For Film Modification
    Publication number: 20200105541
    Abstract: A method of converting films is disclosed. A method of modifying films is also disclosed. Some methods advantageously convert films from a first elemental composition to a second elemental composition. Some methods advantageously modify film properties without modifying film composition.
    Type: Application
    Filed: September 27, 2019
    Publication date: April 2, 2020
    Inventors: Erica Chen, Chentsau Chris Ying, Bhargav S. Citla, Jethro Tannos, Matthew August Mattson
  • Single platform, multiple cycle spacer deposition and etch
    Patent number: 9852916
    Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: December 26, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Hao Chen, Chentsau (Chris) Ying, Srinivas D. Nemani, Ellie Y. Yieh
  • SINGLE PLATFORM, MULTIPLE CYCLE SPACER DEPOSITION AND ETCH
    Publication number: 20160307768
    Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.
    Type: Application
    Filed: June 27, 2016
    Publication date: October 20, 2016
    Inventors: Hao CHEN, Chentsau (Chris) Ying, Srinivas D. Nemani, Ellie Y. Yieh
  • Single platform, multiple cycle spacer deposition and etch
    Patent number: 9406522
    Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: August 2, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hao Chen, Chentsau (Chris) Ying, Srinivas D. Nemani, Ellie Y. Yieh
  • SINGLE PLATFORM, MULTIPLE CYCLE SPACER DEPOSITION AND ETCH
    Publication number: 20160027655
    Abstract: A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.
    Type: Application
    Filed: September 24, 2014
    Publication date: January 28, 2016
    Inventors: Hao Chen, Chentsau (Chris) Ying, Srinivas D. Nemani, Ellie Y. Yieh