Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

Abstract: A solar panel comprises a back contact layer, an absorber layer over the back contact layer, a buffer layer over the absorber layer, and a front contact layer comprising a transparent conductive material over the buffer layer. The front contact layer has a plurality of outer edges and a seed layer comprising a seed layer material along the outer edges.

Abstract: A method of fabricating a photovoltaic device includes a step of forming an absorber layer above a substrate of the photovoltaic device, a step of forming a buffer layer over the absorber layer, and a step of pre-heating the photovoltaic device at a first heating rate to a selected temperature. The first heating rate being higher than 5° C./minute. The method further includes a step of forming a front contact layer over the buffer layer at the selected temperature, after the step of pre-heating the photovoltaic device.

Abstract: A solar panel comprises a back contact layer, an absorber layer over the back contact layer, a buffer layer over the absorber layer, and a front contact layer comprising a transparent conductive material over the buffer layer. The front contact layer has a plurality of outer edges and a seed layer comprising a seed layer material along the outer edges.

Abstract: An light apparatus used in forming a solar cell includes a housing separate from other processing in a deposition processing system, a transport mechanism for carrying a solar cell into the housing after deposition of a front contact layer in the deposition processing system, and one or more light source elements arranged to apply light on the solar cell after deposition of the front contact layer. A method of making a solar cell includes forming a back contact layer on a glass substrate, forming an absorber layer on the back contact layer, forming a buffer layer on the absorber layer, and forming a front contact layer above the buffer layer, the glass substrate, back contact layer, absorber layer, buffer layer, and front contact layer forming a first module. The method includes applying a light source to the first module after forming the front contact layer separate from other processing.

Abstract: An light apparatus used in forming a solar cell includes a housing separate from other processing in a deposition processing system, a transport mechanism for carrying a solar cell into the housing after deposition of a front contact layer in the deposition processing system, and one or more light source elements arranged to apply light on the solar cell after deposition of the front contact layer. A method of making a solar cell includes forming a back contact layer on a glass substrate, forming an absorber layer on the back contact layer, forming a buffer layer on the absorber layer, and forming a front contact layer above the buffer layer, the glass substrate, back contact layer, absorber layer, buffer layer, and front contact layer forming a first module. The method includes applying a light source to the first module after forming the front contact layer separate from other processing.

Abstract: A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, semiconductor light absorbing layer, and a TCO top electrode layer. In one embodiment, a TCO seed layer is formed between the top electrode and absorber layers to improve adhesion of the top electrode layer to the absorber layer. In one embodiment, the seed layer is formed at a lower temperature than the TCO top electrode layer and has a different microstructure.