Abstract: A semiconductor device includes a laterally double diffused metal oxide semiconductor (LDMOS) transistor formed on a partial region of a epitaxial layer of a first conductive type, a bipolar transistor formed on another partial region of the epitaxial layer of the first conductive type, and a guard ring formed between the partial region and the another partial region. The guard ring serves to restrain electrons generated by a forward bias operation of the LDMOS transistor from being introduced into the bipolar transistor.

Abstract: An LDMOS device may include at least one of a second conduction type buried layer and a first conduction type drain extension region. An LDMOS device may include a second conduction type drain extension region configured to be formed in a portion of the first conduction type drain extension region. The second conduction type drain extension region may include a gate pattern and a drain region. An LDMOS device may include a first conduction type body having surface contact with the second conduction type drain extension region and may include a source region. An LDMOS device may include a first guard ring formed around the second conduction type drain extension region. An LDMOS device may include a second guard ring configured to be formed around the first guard ring and configured to be connected to a different region of the second conduction type buried layer.

Abstract: A transistor includes a substrate including a trench, an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench, a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer, and a gate electrode filled in the trench.

Abstract: A semiconductor device includes a laterally double diffused metal oxide semiconductor (LDMOS) transistor formed on a partial region of a epitaxial layer of a first conductive type, a bipolar transistor formed on another partial region of the epitaxial layer of the first conductive type, and a guard ring formed between the partial region and the another partial region. The guard ring serves to restrain electrons generated by a forward bias operation of the LDMOS transistor from being introduced into the bipolar transistor.

Abstract: An LDMOS device may include at least one of a second conduction type buried layer and a first conduction type drain extension region. An LDMOS device may include a second conduction type drain extension region configured to be formed in a portion of the first conduction type drain extension region. The second conduction type drain extension region may include a gate pattern and a drain region. An LDMOS device may include a first conduction type body having surface contact with the second conduction type drain extension region and may include a source region. An LDMOS device may include a first guard ring formed around the second conduction type drain extension region. An LDMOS device may include a second guard ring configured to be formed around the first guard ring and configured to be connected to a different region of the second conduction type buried layer.

Abstract: A semiconductor device including a first conductive epitaxial layer, a second conductive type first well provided in the first conductive epitaxial layer, a first conductive body provided in the first conductive epitaxial layer, a second conductive type drain extension region provided in the first conductive epitaxial layer and interposed between the first conductive body and the second conductive type first well, a second conductive type second well provided in the second conductive type first well, and a gate provided in the first conductive epitaxial layer.

Abstract: A lateral double diffused metal oxide semiconductor (LDMOS) device includes a first buried layer having a second conduction type formed in an epitaxial layer having a first conduction type, a first high-voltage well having the second conduction type formed above one region of the first buried layer, a first drain diffusion region having the first conduction type formed above another region of the first buried layer, a second drain diffusion region having the second conduction type formed in a partial region of the first drain diffusion region, the second drain diffusion region including a gate pattern and a drain region, and a first body having the first conduction type including a source region and having a surface in contact with the second drain diffusion region.

Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate formed therein with a first conductive type well, and an LDMOS device formed on the substrate. The LDMOS device includes a gate electrode, gate oxides formed below the gate electrode, a source region formed in the substrate at one side of the gate electrode, and a drain region formed in the substrate at an opposite side of the gate electrode. The gate oxide includes first and second gate oxides disposed side-by-side and having thicknesses different from each other.

Abstract: A LDMOS transistor and a method for manufacturing the same are disclosed. A lateral double diffused metal oxide semiconductor (LDMOS) transistor includes a first dielectric layer formed on a top surface of a substrate; a plurality of second dielectric layers on a top surface of the first dielectric layer; a plurality of contact plugs spaced apart by a predetermined distance in an active region of the substrate, passing through the first and second dielectric layers; and a bridge metal line formed in the second dielectric layers, inter-connecting the contact plugs in a horizontal direction. The bridge metal line formed to inter-connect the contact plugs allows for more current to flow in the presently disclosed LDMOS transistor than in a conventional LDMOS transistor of identical size.

Abstract: A transistor includes a substrate including a trench, an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench, a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer, and a gate electrode filled in the trench.

Abstract: A transistor includes a substrate including a trench, an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench, a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer, and a gate electrode filled in the trench.

Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate formed therein with a first conductive type well, and an LDMOS device formed on the substrate. The LDMOS device includes a gate electrode, gate oxides formed below the gate electrode, a source region formed in the substrate at one side of the gate electrode, and a drain region formed in the substrate at an opposite side of the gate electrode. The gate oxide includes first and second gate oxides disposed side-by-side and having thicknesses different from each other.

Abstract: A LDMOS transistor and a method for manufacturing the same are disclosed. A lateral double diffused metal oxide semiconductor (LDMOS) transistor includes a first dielectric layer formed on a top surface of a substrate; a plurality of second dielectric layers on a top surface of the first dielectric layer; a plurality of contact plugs spaced apart by a predetermined distance in an active region of the substrate, passing through the first and second dielectric layers; and a bridge metal line formed in the second dielectric layers, inter-connecting the contact plugs in a horizontal direction. The bridge metal line formed to inter-connect the contact plugs allows for more current to flow in the presently disclosed LDMOS transistor than in a conventional LDMOS transistor of identical size.

Abstract: A transistor includes a substrate including a trench, an insulation layer filled in a portion of the trench, the insulation layer having a greater thickness over an edge portion of a bottom surface of the trench than over a middle portion of the bottom surface of the trench, a gate insulation layer formed over inner sidewalls of the trench, the gate insulation layer having a thickness smaller than the insulation layer, and a gate electrode filled in the trench.