Abstract: The present invention relates to a tungsten chemical vapor deposition method and a method for forming a tungsten plug. The tungsten chemical vapor deposition method of the present invention includes preparing a wafer where a barrier layer is formed. Silane gas is supplied from each of a top of the wafer and a bottom of an edge part of the wafer toward the wafer simultaneously, in order to form a silicon passivation thin film on the top surface and the edge part of the wafer; in order to form a tungsten nucleation on the top surface of the wafer where the passivation thin film is formed. A mixed gas including a tungsten fluoride gas and a silane gas is supplied from the top of the wafer toward the wafer, and at the same time a silane gas is supplied from the bottom of the edge part toward the wafer. A mixed gas including a tungsten fluoride gas and a hydrogen gas is supplied from the top of the wafer toward the wafer, in order to deposit a sufficiently thick tungsten on the surface of the wafer.