Abstract: A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.

Abstract: Provided is a method of depositing a thin film using a hafnium compound. In this method, the depositing (S200) of a thin film includes (S20) depositing a primary thin film and (S21) depositing a secondary thin film. Step (S200) is performed by repeating steps (S20) and (S21) once or more. Step (S20) includes (S20-1) feeding a first reactive gas, (S20-2) purging the first reactive gas, (S20-3) feeding a third reactive gas, and (S20-4) purging the third reactive gas. Step (S21) includes (S21-1) feeding a second reactive gas, (S21-2) purging the second reactive gas, (S21-3) feeding the third reactive gas, and (S21-4) purging the third reactive gas. Step (S20) is performed by repeating steps (S20-1), (S20-2), (S20-3), and (S20-4) N times, and step (S21) is performed by repeating steps (S21-1), (S21-2), (S21-3), and (S21-4) M times.

Abstract: Provided is a method of depositing a thin film on a wafer using an aluminum compound. The method includes (S1) mounting the wafer on the wafer block; and (S2) depositing an Al2O3 thin film. Step (S2) includes (S2-1) feeding ozone by spraying ozone through the first spray holes and spraying an inert gas through the second spray holes; (S2-2) purging the ozone by stopping the spraying of the ozone, spraying the inert gas through the first spray holes, and spraying the same inert gas as in step (S2-1) through the second spray holes; (S2-3) feeding TMA by spraying the TMA, which is transferred by a carried gas, through the second spray holes and spraying the inert gas through the first spray holes; and (S2-4) purging the TMA by stopping the spraying of the TMA, spraying the same carrier gas as in step (S2-3) through the second spray holes, and spraying the same inert gas as in step (S2-3) through the first spray holes.