Abstract: A method for manufacturing the LCD device includes forming a thin film transistor array having gate and data lines crossing to each other, defining pixel regions on a substrate, and thin film transistors arranged at crossings of the gate and data lines; forming a passivation layer over the entire surface of the substrate; forming a contact hole in the passivation layer exposing drain electrodes of each thin film transistor; forming an amorphous indium tin oxide film on the passivation layer; selectively crystallizing portions of the amorphous indium tin oxide film within the pixel regions by selectively irradiating light onto the amorphous indium tin oxide thin film; and forming a pixel electrode by selectively removing uncrystallized portions of the amorphous indium tin oxide thin film.

Abstract: A method of fabricating liquid crystal display devices that includes plasma etching an insulation layer while simultaneously removing contaminates from the exposed surface of a substrate. Thinning of the substrate can then be performed by a subsequent etch process to form a highly planar substrate surface that can improve the picture quality of the completed LCD device.

Abstract: A method of manufacturing a thin film transistor, includes preparing a process chamber having a stage, providing a substrate on the stage of the process chamber, injecting a first mixed gas of NH3, N2 and SiH4 into the process chamber, forming a plasma in the process chamber and forming a silicon nitride film (SiNx) on the substrate, injecting a second mixed gas of H2 and SiH4 into the process chamber while removing the first mixed gas in the plasma state, forming a pure amorphous silicon film (a-Si:H) on the silicon nitride film using the second mixed gas, injecting a third mixed gas of H2, SiH4 and PH3 into the process chamber while removing the second mixed gas in the plasma state, and forming a doped amorphous silicon film (n+ a-Si:H) on the silicon nitride film using the second mixed gas.

Abstract: The present invention discloses a method of manufacturing a thin film transistor, including: preparing a process chamber having a stage; providing a substrate on the stage of the process chamber; injecting a first mixed gas of NH3, N2 and SiH4 into the process chamber; forming a plasma in the process chamber and forming a silicon nitride film (SiNx) on the substrate; injecting a second mixed gas of H2 and SiH4 into the process chamber while removing the first mixed gas in the plasma state; forming a pure amorphous silicon film (a-Si:H) on the silicon nitride film using the second mixed gas; injecting a third mixed gas of H2, SiH4 and PH3 into the process chamber while removing the second mixed gas in the plasma state; and forming a doped amorphous silicon film (n+a-Si:H) on the silicon nitride film using the second mixed gas.