Patents by Inventor Cheol-soon Kim
Cheol-soon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11956825Abstract: An uplink transmission method performed by a terminal includes: receiving, from a base station, at least one DCI for allocating first uplink transmission and second uplink transmission; performing a first LBT procedure for the first uplink transmission, and performing the first uplink transmission when the first LBT procedure is successful; and performing a second LBT procedure for the second uplink transmission, and performing the second uplink transmission when the second LBT procedure is successful, wherein the first uplink transmission and the second uplink transmission are consecutively performed with a time interval longer than a predetermined time.Type: GrantFiled: November 15, 2022Date of Patent: April 9, 2024Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Cheol Soon Kim, Sung Hyun Moon, Jung Hoon Lee
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Publication number: 20230354275Abstract: Disclosed are a method and an apparatus for a URLLC in an unlicensed band. An operation method of a terminal comprises the steps of: receiving, from a base station, first configuration information of first FFPs for channel access of the terminal and second configuration information of second FFPs for channel access of the base station; initiating a first COT in at least one first FFP among the first FFPs indicated by the first configuration information; and determining, according to a pre-defined rule, one COT between the first COT and a second COT which is initiated by the base station in at least one second FFP among the second FFPs.Type: ApplicationFiled: February 26, 2021Publication date: November 2, 2023Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung Hyun MOON, Cheol Soon KIM, Jung Hoon LEE
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Patent number: 11716761Abstract: An uplink transmission method performed by a terminal includes: receiving, from a base station, at least one DCI for allocating first uplink transmission and second uplink transmission; performing a first LBT procedure for the first uplink transmission, and performing the first uplink transmission when the first LBT procedure is successful; and performing a second LBT procedure for the second uplink transmission, and performing the second uplink transmission when the second LBT procedure is successful, wherein the first uplink transmission and the second uplink transmission are consecutively performed with a time interval longer than a predetermined time.Type: GrantFiled: March 25, 2021Date of Patent: August 1, 2023Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Cheol Soon Kim, Sung Hyun Moon, Jung Hoon Lee
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Publication number: 20230078723Abstract: An uplink transmission method performed by a terminal includes: receiving, from a base station, at least one DCI for allocating first uplink transmission and second uplink transmission; performing a first LBT procedure for the first uplink transmission, and performing the first uplink transmission when the first LBT procedure is successful; and performing a second LBT procedure for the second uplink transmission, and performing the second uplink transmission when the second LBT procedure is successful, wherein the first uplink transmission and the second uplink transmission are consecutively performed with a time interval longer than a predetermined time.Type: ApplicationFiled: November 15, 2022Publication date: March 16, 2023Inventors: Cheol Soon KIM, Sung Hyun MOON, Jung Hoon LEE
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Patent number: 11595160Abstract: An operation method of a receiving terminal in sidelink communications may comprise: receiving one or more transport blocks (TBs) from a transmitting terminal; generating hybrid automatic repeat request (HARQ) responses for code block groups (CBGs) included in each of the one or more TBs; selecting one or more HARQ responses from among the HARQ responses based on priorities; and transmitting the one or more HARQ responses to the transmitting terminal through a physical sidelink feedback channel (PSFCH) resource.Type: GrantFiled: March 31, 2021Date of Patent: February 28, 2023Assignee: Electronics and Telecommunications Research InstituteInventors: Jung Hoon Lee, Cheol Soon Kim, Sung Hyun Moon
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Patent number: 11348723Abstract: A coil component includes: a body including a support member including a through-hole, a first insulating layer supported by the support member and including a first opening portion, a second insulating layer disposed on the first insulating layer and including a second opening portion, and a coil including a coil pattern filled in the first and second opening portions; and external electrodes disposed on an outer surface of the body.Type: GrantFiled: July 6, 2018Date of Patent: May 31, 2022Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sung Min Moon, Cheol Soon Kim, Yu Jong Kim, Dong Min Kim, Young Do Choi, Tae Ryung Hu
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Patent number: 11205538Abstract: An inductor includes: a body including a support member including a through-hole and a via hole, an insulator disposed on the support member and including a first opening exposing portions of the support member, and a coil pattern disposed in the first opening, and including a plurality of layers including a seed layer in contact with the support member; and an external electrode disposed on an external surface of the body and electrically connected to the coil pattern. The support member may have a multilayer structure of at least first and second insulating layers, and the via hole may penetrate through both of the first and second insulating layers.Type: GrantFiled: May 17, 2018Date of Patent: December 21, 2021Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sung Min Moon, Cheol Soon Kim, Yu Jong Kim, Dong Min Kim, Young Do Choi, Tae Ryung Hu
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Publication number: 20210320759Abstract: An operation method of a receiving terminal in sidelink communications may comprise: receiving one or more transport blocks (TBs) from a transmitting terminal; generating hybrid automatic repeat request (HARQ) responses for code block groups (CBGs) included in each of the one or more TBs; selecting one or more HARQ responses from among the HARQ responses based on priorities; and transmitting the one or more HARQ responses to the transmitting terminal through a physical sidelink feedback channel (PSFCH) resource.Type: ApplicationFiled: March 31, 2021Publication date: October 14, 2021Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jung Hoon LEE, Cheol Soon KIM, Sung Hyun MOON
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Publication number: 20210307070Abstract: An uplink transmission method performed by a terminal includes: receiving, from a base station, at least one DCI for allocating first uplink transmission and second uplink transmission; performing a first LBT procedure for the first uplink transmission, and performing the first uplink transmission when the first LBT procedure is successful; and performing a second LBT procedure for the second uplink transmission, and performing the second uplink transmission when the second LBT procedure is successful, wherein the first uplink transmission and the second uplink transmission are consecutively performed with a time interval longer than a predetermined time.Type: ApplicationFiled: March 25, 2021Publication date: September 30, 2021Inventors: Cheol Soon KIM, Sung Hyun MOON, Jung Hoon LEE
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Patent number: 10902991Abstract: A coil component includes: a body including a support member including a through-hole, a first insulating layer disposed on the support member and including a first opening pattern, a second insulating layer disposed on the first insulating layer and including a second opening pattern, and a coil including a coil pattern filled in the first and second opening patterns; and external electrodes disposed on an outer surface of the body. The coil pattern has a stacking structure composed of a plurality of layers, and the plurality of layers includes a thin film conductor layer in contact with the support member, the thin film conductor layer extending to an entire lower surface of the first opening pattern and at least portions of side surfaces of the first opening pattern.Type: GrantFiled: July 5, 2018Date of Patent: January 26, 2021Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sung Min Moon, Cheol Soon Kim, Yu Jong Kim, Dong Min Kim, Young Do Choi, Tae Ryung Hu
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Publication number: 20190180913Abstract: An inductor includes: a body including a support member including a through-hole and a via hole, an insulator disposed on the support member and including a first opening exposing portions of the support member, and a coil pattern disposed in the first opening, and including a plurality of layers including a seed layer in contact with the support member; and an external electrode disposed on an external surface of the body and electrically connected to the coil pattern. The support member may have a multilayer structure of at least first and second insulating layers, and the via hole may penetrate through both of the first and second insulating layers.Type: ApplicationFiled: May 17, 2018Publication date: June 13, 2019Inventors: Sung Min MOON, Cheol Soon KIM, Yu Jong KIM, Dong Min KIM, Young Do CHOI, Tae Ryung HU
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Publication number: 20190180915Abstract: A coil component includes: a body including a support member including a through-hole, a first insulating layer disposed on the support member and including a first opening pattern, a second insulating layer disposed on the first insulating layer and including a second opening pattern, and a coil including a coil pattern filled in the first and second opening patterns; and external electrodes disposed on an outer surface of the body. The coil pattern has a stacking structure composed of a plurality of layers, and the plurality of layers includes a thin film conductor layer in contact with the support member, the thin film conductor layer extending to an entire lower surface of the first opening pattern and at least portions of side surfaces of the first opening pattern.Type: ApplicationFiled: July 5, 2018Publication date: June 13, 2019Inventors: Sung Min MOON, Cheol Soon Kim, Yu Jong Kim, Dong Min Kim, Young Do Choi, Tae Ryung Hu
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Publication number: 20190180927Abstract: A coil component includes: a body including a support member including a through-hole, a first insulating layer supported by the support member and including a first opening portion, a second insulating layer disposed on the first insulating layer and including a second opening portion, and a coil including a coil pattern filled in the first and second opening portions; and external electrodes disposed on an outer surface of the body.Type: ApplicationFiled: July 6, 2018Publication date: June 13, 2019Inventors: Sung Min MOON, Cheol Soon KIM, Yu Jong KIM, Dong Min KIM, Young Do CHOI, Tae Ryung HU
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Patent number: 8293654Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.Type: GrantFiled: March 21, 2012Date of Patent: October 23, 2012Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry FoundationInventors: Jin-gyoo Yoo, Cheol-soon Kim, Jung-hoon Lee
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Publication number: 20120178233Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.Type: ApplicationFiled: March 21, 2012Publication date: July 12, 2012Applicants: SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION, SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin-gyoo YOO, Cheol-soon KIM, Jung-hoon LEE
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Patent number: 8184473Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.Type: GrantFiled: August 31, 2010Date of Patent: May 22, 2012Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry FoundationInventors: Jin-gyoo Yoo, Cheol-soon Kim, Jung-hoon Lee
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Patent number: 8031427Abstract: A method of servo writing for each track of a magnetic recording medium divided into a plurality of circular tracks including performing a phase adjustment operation by controlling a phase of a recording current according to a skew angle formed by a magnetic head and a track of the magnetic recording medium, and writing a servo pattern when the magnetic recording medium is magnetized using a magnetic head so as to have a magnetized pattern corresponding to a servo pattern.Type: GrantFiled: June 12, 2009Date of Patent: October 4, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-su Kim, Jae-chul Shim, Cheol-soon Kim
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Publication number: 20110188145Abstract: A method of operating a servo track writer includes writing a clock pattern signal to a magnetic recording medium of a head disk assembly, reading the clock pattern signal written to the magnetic recording medium and dividing a frequency of a read clock pattern signal, and supplying a clock pattern signal having a divided frequency to a spindle motor for rotating the magnetic recording medium.Type: ApplicationFiled: January 18, 2011Publication date: August 4, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ha Yong KIM, Kyung Ho KIM, Kyu Nam CHO, Cheol-Soon KIM
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Publication number: 20110188155Abstract: A method of compensating for an imbalance of a hard disk drive includes biasing a plurality of disks in one direction with respect to a rotational shaft of a spindle motor hub, measuring an amount of imbalance of the plurality of disks with respect to the rotational shaft of the spindle motor hub, and compensating the amount of imbalance of the plurality of disks by hitting the hard disk drive in the opposite direction to the one direction in which the plurality of disks are biased to reduce the amount of imbalance with an amount of impact predetermined based on a measured imbalance amount.Type: ApplicationFiled: January 31, 2011Publication date: August 4, 2011Applicant: Samsung Electronics Co., LtdInventors: Joon-Young Lee, Young Bae Chang, Cheol-Soon Kim, Kyung Ho Kim
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Patent number: 7985646Abstract: A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.Type: GrantFiled: March 2, 2007Date of Patent: July 26, 2011Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry FoundationInventors: Jin-gyoo Yoo, Cheol-soon Kim, Jung-hoon Lee