Abstract: A method for high resolution cross sectioning of polysilicon features with a dual electron (E) beam and focused ion beam. The method comprises consecutive steps of encapsulating the polysilicon features of interest with a metal coating, followed by ion beam cross sectioning of the metal encapsulated polysilicon features, followed by electron (E) beam and gas (XeF2) etching and cleaning of the polysilicon from the encapsulating metal to remove the polysilicon while leaving the polysilicon surface features preserved in the encapsulating metal. The method is practiced with a dual beam tool comprising a scanning electron microscope (SEM) and a focused ion beam tool. Advantageously, in the electron (E) beam and gas etching and cleaning step, the cleaning and imaging are simultaneous, allowing E beam imaging while the cleaning is taking place to evaluate the extent of cleaning.

Abstract: The invention surrounds a partially completed integrated circuit structure, having topographical features such as rvias with a precursor organic metal gas and then directs an angled electron beam at the partially completed integrated circuit structure to create secondary electron beams as the angled electron beam strikes the sidewalls of vias. The secondary electron beams break down the precursor metal gas to form a metal coating, without damaging the top layer (or underlying layers). This process directs the electron beam at an angle sufficient to cause the electron beam to strike only the sidewalls of the vias and prevent the electron beam from reaching the bottom of the vias, so as to not damage the vias during the metal formation process. After the protective metal layer is formed, the invention directs an ion beam at the partially completed integrated circuit structure to form a groove within the top layer and allows inspection of the cross sections of the vias exposed by the groove.

Abstract: A method for high resolution cross sectioning of polysilicon features with a dual electron (E) beam and focused ion beam. The method comprises consecutive steps of encapsulating the polysilicon features of interest with a metal coating, followed by ion beam cross sectioning of the metal encapsulated polysilicon features, followed by electron (E) beam and gas (XeF2) etching and cleaning of the polysilicon from the encapsulating metal to remove the polysilicon while leaving the polysilicon surface features preserved in the encapsulating metal. The method is practiced with a dual beam tool comprising a scanning electron microscope (SEM) and a focused ion beam tool. Advantageously, in the electron (E) beam and gas etching and cleaning step, the cleaning and imaging are simultaneous, allowing E beam imaging while the cleaning is taking place to evaluate the extent of cleaning.

Abstract: A method and arrangement of obtaining a transparent image of a resist contact hole or feature provided on a silicon wafer through a scanning electron microscope (SEM), with an absence of deforming the feature, such as the contact hole. In particular, the method is directed to the obtaining of a transparent image of a resist contact hole or feature by SEM without damaging the silicon wafer.

Abstract: An x-ray lithography mask design provides for replacement of a single large area membrane with a set of smaller membranes (segments) fabricated on a single mask substrate forming a segmented mask. The segments are arranged serially so that they can be sequentially aligned and exposed by a shaped x-ray beam. Thus, the segmented mask is a series of mask membrane segments mounted together.

Abstract: An in situ thickness change monitor for determining thickness change in opaque product material, such as silicon, in chamber apparatus, such as reactive ion etching apparatus, operative to produce such thickness change. Reference material having thickness change properties, such as etch-rate, correlatable to the product material thickness change properties is deposited upon a substrate having an index of refraction such as to form a monitor exhibiting an optical discontinuity. With the monitor positioned within the chamber with the product material, light directed thereto acts to provide reflected beams producing light having an intensity variation due to interference indicative of the thickness of the reference material. Changes in the thickness of the reference material are correlated to changes in thickness of the product material.

Abstract: An optical system and technique for monitoring a monotonic change in the thickness of a transparent film by means of optical interference, and for eliminating ambiguity in the identification of absolute film thickness. The system is particularly adapted for monitoring the etching of a dielectric film of uncertain initial thickness in microelectronic fabrication. The technique utilizes a white light source directed upon the film. Reflected light, modified by optical interference in the dielectric film, is monitored by photodetectors at two distinct wavelengths. The cyclic patterns of intensity change at the two wavelengths are compared to identify unambiguously the absolute thickness of the film, although the initial uncertainty in film thickness may have corresponded to several cycles of either wavelength pattern alone.