Patents by Inventor Cheuk Wun WONG

Cheuk Wun WONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11675277
    Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.
    Type: Grant
    Filed: December 23, 2021
    Date of Patent: June 13, 2023
    Assignee: KLA Corporation
    Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
  • Publication number: 20220334502
    Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.
    Type: Application
    Filed: December 23, 2021
    Publication date: October 20, 2022
    Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
  • Patent number: 11231654
    Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: January 25, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
  • Patent number: 10809633
    Abstract: Structures for detecting and correcting an overlay inaccuracy and methods of detecting and correcting an overlay inaccuracy. An overlay target includes a first plurality of features arranged along a first longitudinal axis in a first line-space pattern having a first line width, and a second plurality of features arranged along a second longitudinal axis in a second line-space pattern having a second line width that is less than the first line width. The second longitudinal axis is aligned substantially parallel to the first longitudinal axis.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: October 20, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Dongyue Yang, Cheuk Wun Wong, Xintuo Dai, Sanggil Bae
  • Publication number: 20200241429
    Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.
    Type: Application
    Filed: April 14, 2020
    Publication date: July 30, 2020
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
  • Patent number: 10705435
    Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: July 7, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
  • Publication number: 20190219930
    Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.
    Type: Application
    Filed: January 12, 2018
    Publication date: July 18, 2019
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
  • Publication number: 20130309591
    Abstract: High surface area energy chips that can be used to make high surface area electrodes and methods for making high surface area energy chips are described. The energy chips comprise a monolithic conductive material comprising an open network of pores having an average pore diameter between about 0.3 nm and 30 nm. The conductive material forms a thin chip having a thickness of about 300 microns or less, and the thickness across different portions of the chip varies by less than 10% of the thickness. The high surface area energy chips may be used as electrodes in a variety of energy storage devices and systems such as capacitors, electric double layer capacitors, batteries, and fuel cells.
    Type: Application
    Filed: April 25, 2013
    Publication date: November 21, 2013
    Applicant: NANOTUNE TECHNOLOGIES CORP.
    Inventors: Kuan-Tsae HUANG, Shiho WANG, Cheuk Wun WONG, Jaspal SINGH, Yudi YUDI