Patents by Inventor Cheuk Wun WONG
Cheuk Wun WONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11675277Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.Type: GrantFiled: December 23, 2021Date of Patent: June 13, 2023Assignee: KLA CorporationInventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
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Publication number: 20220334502Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.Type: ApplicationFiled: December 23, 2021Publication date: October 20, 2022Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
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Patent number: 11231654Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.Type: GrantFiled: April 14, 2020Date of Patent: January 25, 2022Assignee: GlobalFoundries U.S. Inc.Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
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Patent number: 10809633Abstract: Structures for detecting and correcting an overlay inaccuracy and methods of detecting and correcting an overlay inaccuracy. An overlay target includes a first plurality of features arranged along a first longitudinal axis in a first line-space pattern having a first line width, and a second plurality of features arranged along a second longitudinal axis in a second line-space pattern having a second line width that is less than the first line width. The second longitudinal axis is aligned substantially parallel to the first longitudinal axis.Type: GrantFiled: September 5, 2019Date of Patent: October 20, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Dongyue Yang, Cheuk Wun Wong, Xintuo Dai, Sanggil Bae
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Publication number: 20200241429Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.Type: ApplicationFiled: April 14, 2020Publication date: July 30, 2020Applicant: GLOBALFOUNDRIES INC.Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
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Patent number: 10705435Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.Type: GrantFiled: January 12, 2018Date of Patent: July 7, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
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Publication number: 20190219930Abstract: Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.Type: ApplicationFiled: January 12, 2018Publication date: July 18, 2019Applicant: GLOBALFOUNDRIES INC.Inventors: Dongyue Yang, Xintuo Dai, Dongsuk Park, Minghao Tang, Md Motasim Bellah, Pavan Kumar Chinthamanipeta Sripadarao, Cheuk Wun Wong
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Publication number: 20130309591Abstract: High surface area energy chips that can be used to make high surface area electrodes and methods for making high surface area energy chips are described. The energy chips comprise a monolithic conductive material comprising an open network of pores having an average pore diameter between about 0.3 nm and 30 nm. The conductive material forms a thin chip having a thickness of about 300 microns or less, and the thickness across different portions of the chip varies by less than 10% of the thickness. The high surface area energy chips may be used as electrodes in a variety of energy storage devices and systems such as capacitors, electric double layer capacitors, batteries, and fuel cells.Type: ApplicationFiled: April 25, 2013Publication date: November 21, 2013Applicant: NANOTUNE TECHNOLOGIES CORP.Inventors: Kuan-Tsae HUANG, Shiho WANG, Cheuk Wun WONG, Jaspal SINGH, Yudi YUDI