Abstract: A manufacturing method of a semiconductor package includes the following steps. A semiconductor device is picked up from a carrier by a pick and place device, wherein the pick and place device includes a flexible head having a bonding portion configured to be in contact with the semiconductor device, a neck portion connecting the bonding portion, wherein a minimum width of the neck portion is substantially smaller than a maximum width of the bonding portion. The semiconductor device is placed and pressed onto a substrate by the pick and place device. An encapsulating material is formed over the substrate to laterally encapsulating the semiconductor device. A redistribution structure is formed over the semiconductor device and the encapsulating material. The substrate is removed.

Abstract: An image sensor may include a polydimethylsiloxane (PDMS) layer that is subwavelength, hydrophobic, and/or antireflective. The PDMS layer may be fabricated to include a surface having a plurality of nanostructures (e.g., an array of convex protuberances and/or an array of concave recesses). The nanostructures may be formed through the use of a porous anodic aluminum oxide (AAO) template that uses a plurality of nanopores to form the array of convex protuberances and/or the array of concave recesses. The nanostructures may each have a respective width that is less than the wavelength of incident light that is to be collected by the image sensor to increase light absorption by increasing the angle of incidence for which the image sensor is capable of collecting incident light. This may increase the quantum efficiency of the image sensor and may increase the sensitivity of the image sensor.

Abstract: Provided is an organic light-emitting material having an ancillary ligand with partially fluorinated substituents. The organic light-emitting material is a metal complex having a diketone ancillary ligand with partially fluorinated substituents and may be used as a light-emitting material in an organic electroluminescent device. These new types of metal complex can fine-tune the emission wavelength more effectively, reduce voltage, improve efficiency, prolong lifetimes, and provide better device performance. Further provided are an organic electroluminescent device and a compound formulation.

Abstract: A circuit includes a memory cell column coupled to a bit line pair and a write circuit that alternately biases a first end of the bit lines toward power supply and reference voltage levels in a write operation. Each of first and second switching circuits at second ends of the bit lines includes first and second logic circuits, each including an input terminal coupled to a corresponding bit line, and first and second switching devices, each including a gate coupled to the corresponding logic circuit. The first logic circuit and switching device couple the corresponding bit line to a power supply node simultaneously with the write circuit biasing the corresponding bit line toward the power supply voltage level, and the second logic circuit and switching device couple the corresponding bit line to a reference node simultaneously with the write circuit biasing the corresponding bit line toward the reference voltage level.

Abstract: An electrical connector includes: an insulating body defining a mating space; and a terminal module assembled to the insulating body and having a circuit board and plural mating terminals mounted on the circuit board, wherein: each of the mating terminals has a contact portion extending obliquely backward, a bending portion bent backward from a front end of the contact portion, a connecting portion extending rearward from a rear end of the bending portion, and a mounting portion vertically extending from a rear end of the connecting portion for mounting on the circuit board; and a front end of the circuit board extends forward into the mating space.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

Abstract: The disclosure provides a flexible cryoablation needle device resistant to a low temperature and a high pressure, a threaded part is arranged on the outer wall of a liner pipe to enhance a connection strength between the liner pipe and a flexible pipe structure. Since an annular protrusion portion is arranged on the outer wall of the liner pipe, further leakage of a gas coming from a pressure relief process is prevented and the connection strength is enhanced as well. Air tightness and connection strength are further guaranteed by radial extrusion of extruding pipes. And an inner cavity in a cutter head is directly subjected to pressure relief through a cutter head vent, a pressure relief intermediate cavity, a liner vent, a flexible pipe vent and a pressure relief gap.

Abstract: A method of displaying a rear-view image and a mobile device using the method are provided. The method includes: receiving the rear-view image; displaying a virtual dashboard through a display; and displaying the rear-view image on a default area of the virtual dashboard in response to receiving a signal associated with a direction indicator light, wherein the default area corresponds to the direction indicator light.

Abstract: A method for image processing is provided. The method includes: capturing and receiving a first set of photo frames; storing the first set of photo frames into a storage unit; performing image processing on the first set of photo frames; and capturing and receiving a second set of photo frames. The performing image processing on the first set of photo frames and the capturing and receiving the second set of photo frames are performed simultaneously. The performing image processing on the first set of photo frames includes: reading the first set of photo frames from the storage unit; storing the first set of photo frames into a temporary storage unit; performing image processing on the first set of photo frames by using an image processing algorithm; and outputting a first output picture.

Abstract: A computing device can include a housing defining an opening, a base layer, and a button mechanism positioned in the opening. The button mechanism can include a keycap movable relative to the base layer between an undepressed state and a depressed state, and a dome contacting the keycap, the dome including a first surface and a second surface, opposite the first surface. In the undepressed state, the first surface can be concave and the second surface can be convex. In a partially depressed state, a first portion of the first surface can be convex and a second portion of the first surface can be concave. In the depressed state, the first surface can be convex and the second surface can be concave.

Abstract: A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

Abstract: A method for determining a reference signal sequence, a terminal device, and a network device, the including receiving, by a terminal device, first indication information sent by a network device, determining, by the terminal device, a target resource based on the first indication information, determining, by the terminal device, a reference signal sequence based on parameters of a first bandwidth and parameters of a second bandwidth, and sending or receiving, by the terminal device, the reference signal sequence on the target resource.

Abstract: An electronic device is provided. The electronic device includes a first substrate, an insulating layer, a first conductive layer and a second conductive layer. The insulating layer is overlapped with the first substrate. The second conductive layer contacts with the first conductive layer. The first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer. The second conductive layer is disposed between the first conductive layer and the insulating layer. Moreover, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer.

Abstract: The invention provides a material surface treatment equipment, which is applied to a material substrate. The material surface treatment equipment includes a surface treatment device and at least one waveguide device. The surface treatment device is used to carry the material substrate to perform a surface treatment process. Each waveguide device is used for introducing electromagnetic waves to the material substrate to assist in performing the surface treatment process. Through the introduction of electromagnetic waves, the surface treatment process of the material substrate is easy to perform and can achieve the strengthening effect.

Abstract: A crystal growth doping apparatus and a crystal growth doping method are provided. The crystal growth doping apparatus includes a crystal growth furnace and a doping device that includes a feeding tube inserted to the furnace body along an oblique insertion direction, and a storage cover and a gate tube that are disposed in the feeding tube. The feeding tube extends from an outer surface thereof to form a placement opening, and the placement opening is recessed from an edge thereof to form an upper recessed portion and a lower recessed portion along the oblique insertion direction. The storage cover includes a storage tank and a handle. When the storage cover is disposed in the gate tube body, the gate tube body is configured to isolate an inner space of the feeding tube from the placement opening.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: A terahertz wave detection chip includes a substrate and at least one detection structure. The detection structure is disposed on a surface of the substrate. The detection structure includes a metamaterial layer and a hydrophilic layer, and the hydrophilic layer is disposed on the metamaterial layer.