Patents by Inventor Chi-Bing Chen

Chi-Bing Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7339480
    Abstract: A power processing interface for a radio frequency identification system is provided.
    Type: Grant
    Filed: April 11, 2005
    Date of Patent: March 4, 2008
    Assignee: Holtek Semiconductor Inc.
    Inventors: Minkun Wang, Chun-Lin Shen, Chi-Ho Hsu, Chi-Bing Chen
  • Publication number: 20080030307
    Abstract: A radio frequency identification (RFID) transponder is provided. The RFID transponder includes an LC resonant circuit having a first high frequency (HF) terminal and a second HF terminal, producing an AC signal, and transmitting a data; a full-wave rectifying circuit having a high voltage terminal, a low voltage terminal, a first terminal electrically connected to the first HF terminal, and a second terminal electrically connected to the second HF terminal, and rectifying the AC signal to a DC signal; and a first data modulating circuit having a third and a fourth terminals respectively electrically connected to the low voltage terminal and the second HF terminal, wherein the first data modulating circuit is coupled to a part of the full-wave rectifying circuit so that the transponder respectively transmits the data and is charged when the AC signal is respectively a negative AC signal and a positive AC signal.
    Type: Application
    Filed: March 9, 2007
    Publication date: February 7, 2008
    Applicant: HOLTEK SEMICONDUCTOR INC.
    Inventor: Chi-Bing Chen
  • Publication number: 20060131428
    Abstract: A power processing interface for a radio frequency identification system is provided.
    Type: Application
    Filed: April 11, 2005
    Publication date: June 22, 2006
    Applicant: Holtek Semiconductor Inc.
    Inventors: Minkun Wang, Chun-Lin Shen, Chi-Ho Hsu, Chi-Bing Chen
  • Patent number: 7005905
    Abstract: A circuit capable of providing stable timing clock includes: a step-down clamping circuit, an oscillating circuit, and a voltage potential-conversing circuit. The step-down clamping circuit that step down the input first voltage potential, and clamp to output second voltage, the oscillating circuit is coupled to the clamping circuit and is an oscillating circuit that takes the second voltage as a operating voltage to generate a first timing clock signal, which has a lower voltage potential. The voltage potential-conversing circuit is coupled to the oscillating circuit to convert the first timing clock signal into a second timing clock signal, which has a higher voltage potential. And it is a stable timing clock signal available for other system circuit.
    Type: Grant
    Filed: February 20, 2004
    Date of Patent: February 28, 2006
    Assignee: Holtek Semiconductor Inc.
    Inventors: Chi-Ho Hsu, Chi-Bing Chen, Hsan-Fong Lin, Chia-Lu Hsu
  • Publication number: 20050057293
    Abstract: A circuit capable of providing stable timing clock includes: a step-down clamping circuit, an oscillating circuit, and a voltage potential-conversing circuit. The step-down clamping circuit that step down the input first voltage potential, and clamp to output second voltage, the oscillating circuit is coupled to the clamping circuit and is an oscillating circuit that takes the second voltage as a operating voltage to generate a first timing clock signal, which has a lower voltage potential. The voltage potential-conversing circuit is coupled to the oscillating circuit to convert the first timing clock signal into a second timing clock signal, which has a higher voltage potential. And it is a stable timing clock signal available for other system circuit.
    Type: Application
    Filed: February 20, 2004
    Publication date: March 17, 2005
    Inventors: Chi-Ho Hsu, Chi-Bing Chen, Hsan-Fong Lin, Chia-Lu Hsu
  • Publication number: 20030160179
    Abstract: A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.
    Type: Application
    Filed: February 22, 2002
    Publication date: August 28, 2003
    Applicant: Taiwn Semiconductor Manufacturing Co., Ltd.
    Inventors: Su-Yu Yeh, Chi-Bing Chen, Cheng-Yi Huang, Chao-Jie Tsai, Lu-Chang Chen, Hsing-Jui Lee
  • Patent number: 6605812
    Abstract: A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: August 12, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Su-Yu Yeh, Chi-Bing Chen, Cheng-Yi Huang, Chao-Jie Tsai, Lu-Chang Chen, Hsing-Jui Lee