Abstract: A method of forming semiconductor devices having improved work function layers and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type work function metal on the gate dielectric layer; performing an oxygen treatment on the first p-type work function metal; and after performing the oxygen treatment, depositing a second p-type work function metal on the first p-type work function metal.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.

Abstract: A violation checking method includes generating a violation log report for a design, classifying violation logs in the violation log report into high-risk logs and low-risk logs by a machine learning model, reviewing the high-risk logs, and modifying the design if at least one bug is identified in the high-risk logs.

Abstract: A semiconductor structure including a substrate, a first dielectric layer disposed on the substrate, a second dielectric layer disposed on the first dielectric layer and in physical contact with the first dielectric layer, an opening on the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer, an conductive layer disposed on the second dielectric layer at two sides of the opening and in physical contact with the second dielectric layer, a contact structure disposed in the lower portion of the opening, and a passivation layer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer.

Abstract: An integrated motor and drive assembly is disclosed and includes a housing, a motor and a drive. The housing includes a motor-accommodation portion and a drive-accommodation portion. The drive includes a power board and a control board. The power board is made of a high thermal conductivity substrate and includes a power element and an encoder disposed on the first side, the first side faces the motor, the power board and the motor are stacked along a first direction, and the second side contacts the housing to from a heat-dissipating route. The control board is disposed adjacent to the power board. The control board and the power board are arranged along a second direction perpendicular to the first direction, and the first direction is parallel to an axial direction of the motor. A part of the power board and a part of the control board are directly contacted to form an electrical connection.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: The disclosure provides a limit device and a robot using the same. The limit device comprises a first connecting member, a transmission rod and a second connecting member. The first connecting member comprising a first main body portion and two first connecting elements. The two first connecting elements are arranged at intervals. The two first connecting elements are respectively connected to the first main body. The transmission rod comprising a first end and a second end. The first end and the second end are arranged at intervals. The first end penetrates through one of the two first connecting elements. The second end penetrates through the other one of the two first connecting element. The second connecting member provided with two indexing buckles. The two indexing buckles are arranged at intervals, each of the indexing buckles comprises a first limiting groove and a second limiting groove.

Abstract: A method of forming semiconductor devices having improved work function layers and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type work function metal on the gate dielectric layer; performing an oxygen treatment on the first p-type work function metal; and after performing the oxygen treatment, depositing a second p-type work function metal on the first p-type work function metal.

Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.

Abstract: An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.

Abstract: A method for managing access to network resources by a first network device may include establishing a communication session with the first network device. The method may also include receiving information from the first network device during the communication session, the information indicating that the first network device is not in compliance with at least one security-related rule. The method may further include determining whether to modify access by the first network device to at least one of the network resources based on the received information.

Abstract: An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.

Abstract: Technology is disclosed for controlling access to data store information among multiple entities. A corresponding wrapper is created for information that may be subject to simultaneous access attempts. The wrapper includes an attribute that identifies the accessibility of the information—indicating whether the information is locked from further access, shareable among multiple entities, or not restricted at all. Before accessing information in the data store, an entity looks at the wrapper associated with the information to determine the type of access allowed, if any. An Identity, Access, or integrated Identity/Access System may maintain the wrappers as objects in the data store, with each wrapper object controlling another object containing information. Wrappers can be utilized when multiple provisioning applications are employed to provision resources. Each user and their corresponding resources are represented as objects with corresponding wrappers.

Abstract: An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.

Abstract: An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.

Abstract: Technology is disclosed for supporting multiple data stores. The set of data stores can be of a uniform type, or the various data stores can be different types (e.g. Lightweight Directory Access Protocol (LDAP), Structured Query Language (SQL), etc.). One implementation of the disclosed technology is with an Identity System. Another implementation is with an integrated Identity System and Access System. Various embodiments of the present invention utilize different means to separate the business logic of a system from the data access logic so that different types of data stores can be used without changing the business logic.

Abstract: The present invention is directed to technology for using a proxy in an Identity System. When a first entity is on vacation, on a business trip or otherwise unavailable to perform certain actions on an Identity System, a second entity can act as a proxy for the first entity. The Identity System will provide the second entity, acting as a proxy, with the privileges, access and rights of the first entity. In one embodiment, Identity System is part of an integrated Identity and Access System, and the second entity is a proxy in the Identity System but not in the Access System.

Abstract: Identity Servers issue and respond to requests for performing remote operations. A local Identity Server receives a request to perform a remote operation. The local Identity Server identifies and executes any required local operations. After completing the local operations, the local Identity Server forwards the remote request to a remote Identity Server, which executes the remote operation. An Identity Server includes a management service, management registry, and request handler. The management service identifies and issues remote request to other servers. The request handler receives remote requests from other servers. The management registry maintains an index of function modules for performing local operations.

Abstract: A communication device includes a first low frequency transmission/receiver module and a second low frequency transmission/receiver module configured on a helmet and a portable communication device respectively. A sounder device and a receiver device are configured on the helmet so as to correspond to position of the ear and the mouth of a wearer of the helmet respectively, and which are mutually connected to the first low frequency transmission/receiver module. Wireless transmission signals between the second low frequency transmission/receiver module of the portable communication device and the first low frequency transmission/receiver module configurationally connected to the sounder device and the receiver device of the helmet thereby enable the wearer of the helmet to directly utilize the receiver device and the sounder device of the helmet to carry out a conversation with an incoming caller.