Patents by Inventor Chi-Fa Ku
Chi-Fa Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11011649Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, a gate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.Type: GrantFiled: July 5, 2018Date of Patent: May 18, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Shao-Hui Wu, Chen-Bin Lin, Ding-Lung Chen, Chi-Fa Ku
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Patent number: 10644166Abstract: The present invention provides a method for forming a semiconductor structure, the method includes: firstly, a substrate having a recess disposed therein is provided, wherein the substrate comprises a silicon substrate, next, a first element is formed in the recess and arranged along a first direction, wherein the first element is made of an oxidation semiconductor material, afterwards, a dielectric layer is formed on the first element, and a second element is formed on dielectric layer and arranged along the first direction, wherein the second element is used as the gate structure of a transistor structure.Type: GrantFiled: September 13, 2018Date of Patent: May 5, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Shao-Hui Wu, Chi-Fa Ku
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Publication number: 20190027607Abstract: The present invention provides a method for forming a semiconductor structure, the method includes: firstly, a substrate having a recess disposed therein is provided, wherein the substrate comprises a silicon substrate, next, a first element is formed in the recess and arranged along a first direction, wherein the first element is made of an oxidation semiconductor material, afterwards, a dielectric layer is formed on the first element, and a second element is formed on dielectric layer and arranged along the first direction, wherein the second element is used as the gate structure of a transistor structure.Type: ApplicationFiled: September 13, 2018Publication date: January 24, 2019Inventors: ZHIBIAO ZHOU, Shao-Hui Wu, Chi-Fa Ku
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Publication number: 20180331233Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, a gate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.Type: ApplicationFiled: July 5, 2018Publication date: November 15, 2018Inventors: ZHIBIAO ZHOU, Shao-Hui Wu, Chen-Bin Lin, Ding-Lung Chen, Chi-Fa Ku
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Patent number: 10115786Abstract: A capacitor includes: a bottom electrode; a middle electrode on the bottom electrode; a top electrode on the middle electrode; a first dielectric layer between the bottom electrode and the middle electrode; and a second dielectric layer between the middle electrode and the top electrode. Preferably, the second dielectric layer is disposed on at least a sidewall of the middle electrode to physically contact the first dielectrically, and the middle electrode includes a H-shape.Type: GrantFiled: November 15, 2016Date of Patent: October 30, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin
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Patent number: 10103273Abstract: A semiconductor structure includes a substrate and a first element disposed in the substrate and arranged along a first direction. The first element is made of a semiconductor oxide material. The semiconductor structure also includes a dielectric layer disposed on the first element, and a second element, disposed on the dielectric layer and arranged along the first direction. The second element is used as a gate of a transistor structure.Type: GrantFiled: March 1, 2017Date of Patent: October 16, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Shao-Hui Wu, Chi-Fa Ku
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Patent number: 10102907Abstract: A method for fabricating a semiconductor memory device is disclosed. A semiconductor substrate having a main surface is prepared. At least a first dielectric layer is formed on the main surface of the semiconductor substrate. A first OS FET device and a second OS FET device are formed on the first dielectric layer. At least a second dielectric layer is formed to cover the first dielectric layer, the first OS FET device, and the second OS FET device. A first MIM capacitor and a second MIM capacitor are formed on the second dielectric layer. The first MIM capacitor is electrically coupled to the first OS FET device, thereby constituting a DOSRAM cell. The second MIM capacitor is electrically coupled to the second OS FET device, thereby constituting a NOSRAM cell.Type: GrantFiled: December 19, 2016Date of Patent: October 16, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Chen-Bin Lin, Chi-Fa Ku, Shao-Hui Wu
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Patent number: 10056493Abstract: A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the oxide-semiconductor layer.Type: GrantFiled: December 25, 2017Date of Patent: August 21, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Ding-Lung Chen, Chen-Bin Lin, Sanpo Wang, Chung-Yuan Lee, Chi-Fa Ku
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Patent number: 10043917Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.Type: GrantFiled: March 3, 2016Date of Patent: August 7, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Shao-Hui Wu, Chen-Bin Lin, Ding-Lung Chen, Chi-Fa Ku
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Publication number: 20180138316Abstract: A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the oxide-semiconductor layer.Type: ApplicationFiled: December 25, 2017Publication date: May 17, 2018Inventors: ZHIBIAO ZHOU, Ding-Lung Chen, Chen-Bin Lin, SANPO WANG, Chung-Yuan Lee, Chi-Fa Ku
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Patent number: 9966428Abstract: A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a first conductive layer, a first dielectric layer, and a second conductive layer on the material layer; patterning the first dielectric layer and the second conductive layer to form a patterned first dielectric layer and a middle electrode; forming a second dielectric layer on the first conductive layer and the middle electrode; removing part of the second dielectric layer to form a patterned second dielectric layer; forming a third conductive layer on the first conductive layer and the patterned second dielectric layer, wherein the third conductive layer contacts the first conductive layer directly; and removing part of the third conductive layer to expose part of the patterned second dielectric layer.Type: GrantFiled: January 15, 2016Date of Patent: May 8, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin
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Patent number: 9893066Abstract: A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.Type: GrantFiled: February 14, 2017Date of Patent: February 13, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhi-Biao Zhou, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin, Su Xing, Tien-Yu Hsieh
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Patent number: 9887293Abstract: A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a dielectric layer, a first gate electrode, a second gate electrode and a charge storage structure. The oxide-semiconductor layer is disposed on the first gate electrode on the substrate. The source/drain regions are disposed on the oxide-semiconductor layer. The first dielectric layer covers on the oxide-semiconductor layer and source/drain regions. A second gate electrode is disposed between source/drain regions and partially covers the oxide-semiconductor layer. The oxide-semiconductor layer may be optionally disposed between the first gate electrode and the oxide-semiconductor layer or be disposed on the second gate electrode.Type: GrantFiled: June 24, 2016Date of Patent: February 6, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Ding-Lung Chen, Chen-Bin Lin, Sanpo Wang, Chung-Yuan Lee, Chi-Fa Ku
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Patent number: 9851780Abstract: A semiconductor device includes a main processor, a normally-off processor, and at least one oxide semiconductor random access memory (RAM). The normally-off processor includes at least one oxide semiconductor transistor. The main processor is connected to the normally-off processor, and a clock rate of the main processor is higher than a clock rate of the normally-off processor. The oxide semiconductor RAM is connected to the normally-off processor. An operating method of the semiconductor includes backing up data from the main processor to the normally-off processor and/or the oxide semiconductor RAM.Type: GrantFiled: August 19, 2015Date of Patent: December 26, 2017Assignee: UNITED MICROELECTRONICS CORP.Inventors: Zhibiao Zhou, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin
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Publication number: 20170338351Abstract: A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a dielectric layer, a first gate electrode, a second gate electrode and a charge storage structure. The oxide-semiconductor layer is disposed on the first gate electrode on the substrate. The source/drain regions are disposed on the oxide-semiconductor layer. The first dielectric layer covers on the oxide-semiconductor layer and source/drain regions. A second gate electrode is disposed between source/drain regions and partially covers the oxide-semiconductor layer. The oxide-semiconductor layer may be optionally disposed between the first gate electrode and the oxide-semiconductor layer or be disposed on the second gate electrode.Type: ApplicationFiled: June 24, 2016Publication date: November 23, 2017Inventors: ZHIBIAO ZHOU, Ding-Lung Chen, Chen-Bin Lin, SANPO WANG, Chung-Yuan Lee, Chi-Fa Ku
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Publication number: 20170256652Abstract: An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back gate, an oxide semiconductor film, a pair of source and drain electrodes, agate insulating film, a gate electrode on the oxide semiconductor film with the gate insulating film therebetween, an insulating layer covering only over the gate electrode and the pair of source and drain electrodes, and a top blocking film over the insulating layer.Type: ApplicationFiled: March 3, 2016Publication date: September 7, 2017Inventors: ZHIBIAO ZHOU, Shao-Hui Wu, Chen-Bin Lin, Ding-Lung Chen, Chi-Fa Ku
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Publication number: 20170179295Abstract: A semiconductor structure includes a substrate and a first element disposed in the substrate and arranged along a first direction. The first element is made of a semiconductor oxide material. The semiconductor structure also includes a dielectric layer disposed on the first element, and a second element, disposed on the dielectric layer and arranged along the first direction. The second element is used as a gate of a transistor structure.Type: ApplicationFiled: March 1, 2017Publication date: June 22, 2017Inventors: ZHIBIAO ZHOU, Shao-Hui Wu, Chi-Fa Ku
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Publication number: 20170170256Abstract: A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a first conductive layer, a first dielectric layer, and a second conductive layer on the material layer; patterning the first dielectric layer and the second conductive layer to form a patterned first dielectric layer and a middle electrode; forming a second dielectric layer on the first conductive layer and the middle electrode; removing part of the second dielectric layer to form a patterned second dielectric layer; forming a third conductive layer on the first conductive layer and the patterned second dielectric layer, wherein the third conductive layer contacts the first conductive layer directly; and removing part of the third conductive layer to expose part of the patterned second dielectric layer.Type: ApplicationFiled: January 15, 2016Publication date: June 15, 2017Inventors: ZHIBIAO ZHOU, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin
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Publication number: 20170170257Abstract: A capacitor includes: a bottom electrode; a middle electrode on the bottom electrode; a top electrode on the middle electrode; a first dielectric layer between the bottom electrode and the middle electrode; and a second dielectric layer between the middle electrode and the top electrode. Preferably, the second dielectric layer is disposed on at least a sidewall of the middle electrode to physically contact the first dielectrically, and the middle electrode includes a H-shape.Type: ApplicationFiled: November 15, 2016Publication date: June 15, 2017Inventors: ZHIBIAO ZHOU, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin
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Publication number: 20170154887Abstract: A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.Type: ApplicationFiled: February 14, 2017Publication date: June 1, 2017Inventors: Zhi-Biao Zhou, Shao-Hui Wu, Chi-Fa Ku, Chen-Bin Lin, Su Xing, Tien-Yu Hsieh