Abstract: A terminal, comprising one or a plurality of processors, wherein the one or plurality of processors execute a machine-readable instruction to perform: receiving an object in a live streaming; displaying the object on the terminal; detecting a keyword in the object corresponding to a function in the live streaming; and triggering the function in response to an operation on the object. The present disclosure may allow the streamers to generate or amend an object such as stickers on the live streaming room in a more flexible manner. At the same time, the viewer may perform an operation on the object to realize a corresponding function in a more convenient manner. Therefore, the interaction among streamers and viewers may be increased, and the user experience may also be enhanced.

Abstract: An electronic device is disclosed. The electronic device includes a substrate, a plurality of color filters disposed on the substrate, an optical film disposed on the plurality of color filter, and a defect disposed between the substrate and the optical film. The optical film has a first base, a protective layer on the first base, and a second base between the first base and the protective layer and having a first processed area. In a top view of the electronic device, the first processed area corresponds to the defect and at least partially overlaps at least two color filters.

Abstract: A package includes a substrate having a conductive layer, and the conductive layer comprises an exposed portion. A die stack is disposed over the substrate and electrically connected to the conductive layer. A high thermal conductivity material is disposed over the substrate and contacting the exposed portion of the conductive layer. The package further includes a contour ring over and contacting the high thermal conductivity material.

Abstract: A circuit for driving the voltage of a capacitive element between two voltage levels has at least one driver cell with a first pair of switches connected in series between a first terminal of a voltage source and the capacitive element, and a second pair of switches connected in series between a second terminal of the voltage source and the capacitive element. A plurality of non-dissipative elements may be connected in parallel or in series between the first pair of switches and the second pair of switches. Combinations of switches from the driver cells may be activated and deactivated in a defined sequence to provide step-wise transfer of energy to the capacitive element. The defined sequence may have a switching pattern with a voltage change portion arranged to cause a change in an output voltage of the capacitive element driver during application thereof on the capacitive element driver.

Abstract: An apparatus comprises a processing device configured to receive a request to store data on a storage system, and to determine storage node correlation metrics for storage nodes of the storage system characterizing probabilities of input/output operations being directed to filesystems having data stored on the storage nodes. The processing device is also configured to select, based on the storage node correlation metrics, one of the storage nodes to utilize for storing a given portion of the data, and to determine storage device correlation metrics for storage devices of the selected storage node characterizing probabilities of input/output operations being directed to filesystems having data stored on the storage devices. The processing device is further configured to select, based on the storage device correlation metrics, one of the storage devices of the selected storage node to utilize for storing the given data portion.

Abstract: A semiconductor device includes first and second active regions extending in parallel in a substrate, a plurality of conductive patterns, each conductive pattern of the plurality of conductive patterns extending on the substrate across each of the first and second active regions, and a plurality of metal lines, each metal line of the plurality of metal lines overlying and extending across each of the first and second active regions. Each conductive pattern of the plurality of conductive patterns is electrically connected in parallel with each metal line of the plurality of metal lines.

Abstract: The disclosure provides a method for manufacturing a semiconductor package assembly, which results in a semiconductor package assembly with a more even distributed stress concentrations, reduced solder crack occurrences and limited solder filler joint connections.

Abstract: A method of forming a FinFET is disclosed. The method includes depositing a conductive material across each of a number of adjacent fins, depositing a sacrificial mask over the conductive material, patterning the conductive material with the sacrificial mask to form a plurality of conductive material segments, depositing a sacrificial layer over the sacrificial mask, and patterning the sacrificial layer, where a portion of the patterned sacrificial layer remains over the sacrificial mask, where a portion of the sacrificial mask is exposed, and where the exposed portion of the sacrificial mask extends across each of the adjacent fins. The method also includes removing the portion of the sacrificial layer over the sacrificial mask, after removing the portion of the sacrificial layer over the sacrificial mask, removing the sacrificial mask, epitaxially growing a plurality of source/drain regions from the semiconductor substrate, and electrically connecting the source/drain regions to other devices.

Abstract: An apparatus comprises a processing device configured to identify storage workloads to be run on a storage system, and to determine a mix of input/output (TO) patterns associated with the identified storage workloads, the mix of IO patterns comprising a first set of IO patterns characterizing types of IO operations performed by a first storage workload and at least a second set of IO patterns characterizing types of IO operations performed by a second storage workload. The processing device is also configured to calculate an affinity metric for the mix of IO patterns, the calculated affinity metric characterizing a difference between (i) performance metrics for the mix of IO patterns running concurrently and (ii) the first and second sets of IO patterns running individually. The processing device is further configured to allocate the identified storage workloads to storage devices of the storage system based on the calculated affinity metric.

Abstract: Provided are interfering RNAs (e.g., siRNAs) targeting SARS-CoV (e.g., the POL, Spike, Helicase, or Envelop gene thereof) and therapeutic uses thereof for inhibiting SARS-CoV infection and/or treating diseases associated with the infection (e.g., COVID-19).

Abstract: A device structure according to the present disclosure includes a conductive feature disposed in a first dielectric layer, a ferroelectric tunnel junction (FTJ) stack disposed over the conductive feature, a spacer disposed along sidewalls of the FTJ stack, a second dielectric layer disposed over the spacer and the FTJ stack, a second dielectric layer disposed over the spacer and the FTJ stack, and a contact via extending through the second dielectric layer. The FTJ stack includes a bottom electrode layer electrically coupled to the conductive feature, a ferroelectric layer over the bottom electrode layer, and a top electrode layer on the ferroelectric layer. The top electrode layer is formed of a conductive metal oxide.

Abstract: A circuit for driving the voltage of a capacitive element between two voltage levels has at least one driver cell with a first pair of switches connected in series between a first terminal of a voltage source and the capacitive element, and a second pair of switches connected in series between a second terminal of the voltage source and the capacitive element. A plurality of non-dissipative elements may be connected in parallel or in series between the first pair of switches and the second pair of switches. Combinations of switches from the driver cells may be activated and deactivated in a defined sequence to provide step-wise transfer of energy to the capacitive element. The defined sequence may have a switching pattern with a voltage change portion arranged to cause a change in an output voltage of the capacitive element driver during application thereof on the capacitive element driver.

Abstract: A mouse is provided. The mouse includes a casing, a circuit board, a micro switch base, and a micro switch. The casing includes a button. The circuit board is disposed in the casing. The micro switch base is disposed on the circuit board, and includes a plurality of first openings and a plurality of second openings. The micro switch is fixed on the micro switch base through at least one of the first openings, and electrically connected to the circuit board through the first openings or the second openings.

Abstract: A water quality monitoring device and a monitoring method thereof are provided. The water quality monitoring device includes a water tank, a first and a second optical detection devices and a control circuit. The water tank has an accommodating space to carry a liquid. The first optical detection device provides a first light to detect and obtain a first reference light intensity, a first scattered light intensity, and a first penetrating light intensity. The second optical detection device provides a second light to detect and obtain a second reference light intensity, a second scattered light intensity, and a second penetrating light intensity. The control circuit calculates a water quality detection value of the liquid based on the first reference light intensity, the first scattered light intensity, the first penetrating light intensity, the second reference light intensity, the second scattered light intensity, and the second penetrating light intensity.

Abstract: A light emitting device includes a substrate, multiple light emitting diodes disposed on the substrate and a light-reflecting resist. The light emitting diode has a first electrode and a second electrode, both of which are disposed on a first surface of the light emitting diode facing the substrate. The light-reflecting resist is disposed between the light emitting diodes and directly contacts a side surface of the light emitting diode. At least a portion of the light-reflecting resist is disposed between the first electrode and the second electrode.

Abstract: A circuit for driving the voltage of a capacitive element between two voltage levels has at least one driver cell with a first pair of switches connected in series between a first terminal of a voltage source and the capacitive element, and a second pair of switches connected in series between a second terminal of the voltage source and the capacitive element. One or more non-dissipative elements may be connected between the common node of the first pair of switches and the common node of the second pair of switches. Combinations of switches from the driver cells may be activated and deactivated in a defined sequence to provide step-wise transfer of energy to the capacitive element. In one sequence, switches in a selected driver cell may subtract a specified voltage from an input voltage, bypass the selected driver cell, and add the specified voltage to the input voltage.

Abstract: An on-cell touch display and a preparing method thereof are provided. The on-cell touch display includes a display panel and a touch sensor disposed on the display panel. The touch sensor includes a first conductive thin film, which is formed on the display panel; an insulating layer, which is formed on the first conductive thin film; a second conductive thin film, which is formed on the insulating layer; and a protective film, which is formed on the second conductive thin film; wherein the non-uniformity value of the first conductive thin film and the second conductive thin film is less than 15% respectively.

Abstract: A stacking structure includes a substrate, a silver nanowire layer provided on a top of the substrate, and a metal layer provided on a top of the silver nanowire layer. The silver nanowire layer includes a plurality of silver nanowires and an indium tin oxide (ITO) covered on the plurality of silver nanowires. The silver nanowire layer has an overall thickness that is 2.35 to 24 times as thick as a thickness of the ITO. A touch sensor including the above described stacking structure is also disclosed.