Abstract: A vacuum coating apparatus includes at least a chamber, an arc discharge plasma source, a feeding-reeling unit, and a roller set. The first and second openings are connecting with the feeding or reeling unit so as to allow the substrate to enter and leave the chamber therethrough, respectively. The arc discharge plasma source located inside the chamber generates the plasma, which discharges radially from the arc discharge plasma source as its center. The roller set includes a plurality of the first rollers, which are located in the chamber and enclosing the arc discharge plasma source. A first surface of the substrate is facing the plurality of the first rollers and contacts tightly on the periphery of the first rollers so that the first rollers can rotate by the moving of the substrate. The material evaporated and emitted by the plasma is attached onto the first surface of the substrate.

Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

Abstract: A large-area plasma generating apparatus is disclosed, which includes a reaction chamber; a first electrode disposed in the reaction chamber; a second electrode parallel with the first electrode and disposed in the reaction chamber; and a discharge region formed between the first and second electrodes and a plasma can be formed therein; wherein a travelling wave or a traveling-wave-like electromagnetic field is generated via at least one of the first and second electrodes and travels from one end of the discharge region to its opposite end, so as to uniform the plasma in the discharge region.

Abstract: A vacuum coating apparatus includes at least a chamber, an arc discharge plasma source, a feeding-reeling unit, and a roller set. The first and second openings are connecting with the feeding or reeling unit so as to allow the substrate to enter and leave the chamber therethrough, respectively. The arc discharge plasma source located inside the chamber generates the plasma, which discharges radially from the arc discharge plasma source as its center. The roller set includes a plurality of the first rollers, which are located in the chamber and enclosing the arc discharge plasma source. A first surface of the substrate is facing the plurality of the first rollers and contacts tightly on the periphery of the first rollers so that the first rollers can rotate by the moving of the substrate. The material evaporated and emitted by the plasma is attached onto the first surface of the substrate.

Abstract: A large-area plasma generating apparatus is disclosed, which includes a reaction chamber; a first electrode disposed in the reaction chamber; a second electrode parallel with the first electrode and disposed in the reaction chamber; and a discharge region formed between the first and second electrodes and a plasma can be formed therein; wherein a travelling wave or a traveling-wave-like electromagnetic field is generated via at least one of the first and second electrodes and travels from one end of the discharge region to its opposite end, so as to uniform the plasma in the discharge region.

Abstract: Disclosed is an atmospheric-pressure double-plasma graft polymerization apparatus. The apparatus includes a workbench, an initial roller of a roll-to-roll device, an atmospheric-pressure plasma activation device, a peroxide formation device, a coating and grafting device, a drying device, a graft polymerization and curing device, a curing device and a final roller of a roll-to-roll device. The devices are sequentially provided on the workbench.

Abstract: A gas isolation chamber comprises a vacuum chamber, a first body module, a second body module and a first temperature modulator. The vacuum chamber comprises a first chamber part, a second chamber part and at least one first gas valve unit. The first body module is disposed on the inner wall of the first chamber part and has a first gas hole corresponding to the position of the first gas valve unit. The first gas hole is connected to the first gas valve unit. The second body module is disposed on the inner wall of the second chamber part such that a slit channel can be formed between the second and the first body modules. The first temperature modulator is disposed in the first body module. The gas isolation chamber is further combined with the vacuum film process chambers to form a plasma deposition apparatus for proceeding continuous deposition process.

Abstract: The present invention fabricates a hydrophobic and oleophobic polymer fabric through two stages of modification using atmospheric plasmas. The modified fabric has a rough surface and a fluorocarbon functional group having the lowest surface free energy. The fabric has a grafted fluorocarbon monomer layer to enhance the graft efficiency of the fluorocarbon functional groups and its wash fastness. The atmospheric plasmas can be mass produced and less expensively. Hence, the present invention can rapidly modify surfaces of polymeric materials with low cost and good environment protection.

Abstract: A method of fabricating hydrophobic and oleophobic polymer fabric through two stages of modification using atmospheric plasmas including (a) moving a substrate into an atmospheric plasma area, generating an atmospheric filamentary discharge plasma with a first plasma working gas to obtain a first rough surface of said substrate, (b) exposing plasma treated substrate to air to obtain highly active peroxide on said first rough surface of said substrate, (c) immersing said substrate in a solution of fluorocarbon compound and processing a first stage of graft of a fluorocarbon monomer or oligomer on said substrate to obtain a grafted fluorocarbon monomer or oligomer layer on said first rough surface of said substrate, (d) processing a second stage of graft a fluorocarbon functional group to said grafted fluorocarbon monomer or oligomer layer by generating a carbon tetrafluoride plasma from a second plasma working gas and irradiating said carbon tetrafluoride plasma on said grafted fluorocarbon monomer or oligomer

Abstract: An apparatus provides large area atmospheric pressure plasma enhanced chemical vapor deposition without contaminations in its electrode assembly and deposited films. The apparatus consists of a large area vertical planar nitrogen plasma activation electrode assembly and its high voltage power supply, a large area vertical planar nitrogen plasma deposition electrode assembly and its high voltage power supply, a long-line uniform precursor jet apparatus, a roll-to-roll apparatus for substrate movement, and a sub-atmospheric pressure deposition chamber and its pumping apparatus.

Abstract: An atmospheric pressure plasma reactor includes a high-voltage electrode, a common grounded electrode, a bias electrode and at least one dielectric layer. The high-voltage electrode is connected to a high-voltage power supply. The common grounded electrode is used with the high-voltage electrode to discharge and therefore produce planar atmospheric plasma from reactive gas. The bias electrode is used to generate bias for attracting the ions of the planar atmospheric pressure plasma. The dielectric layer is used to suppress undesirable arc discharge during the discharging.

Abstract: The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.

Abstract: An RF hollow cathode plasma source consists of a vacuum chamber, a pipe, a hollow cathode, at least two compartments, a conduit and input electrodes. The pipe is inserted into the chamber for introducing working gas into the chamber. The hollow cathode is disposed in the chamber and formed with a large number of apertures. At least two compartments are located below the hollow cathode. Each of the compartments includes small apertures for uniformly spreading the working gas into the apertures of the hollow cathode. The conduit is disposed along two sides of the hollow cathode to circulate cooling water around the hollow cathode. The plural input power leads are arranged near the hollow cathode. The input power leads, the pipe and the conduits are connected to the hollow cathode though the electrically-insulated walls of the grounded vacuum chamber.

Abstract: A thin-film photovoltaic device comprising at least: a substrate, a transparent electrode layer, a p-type semiconductor as the ohmic contact layer, an intrinsic semiconductor as the light absorption layer, and a magnesium alloy substituted for the n-type semiconductor as the other ohmic contact layer. A method for manufacturing the thin-film photovoltaic device is also provided in the present invention.

Abstract: The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.

Abstract: The present invention fabricates a hydrophobic and oleophobic polymer fabric through two stages of modification using atmospheric plasmas. The modified fabric has a rough surface and a fluorocarbon functional group having the lowest surface free energy. The fabric has a grafted fluorocarbon monomer layer to enhance the graft efficiency of the fluorocarbon functional groups and its wash fastness. The atmospheric plasmas can be mass produced and less expensively. Hence, the present invention can rapidly modify surfaces of polymeric materials with low cost and good environment protection.

Abstract: A plasma source comprises a vacuum chamber, a plurality of discharge tubes, a plurality of permanent magnets, a plurality of RF antennas, and an RF power distribution circuit. The RF power distribution circuit is electrically coupled to an RF power supply and each of the plurality of RF antennas. The lengths of the transmission paths between each of the plurality of RF antennas and the RF power supply are the same, so that the RF power supply can provide each of discharge tubes with the same RF power.

Abstract: A magnetron sputtering apparatus suitable for coating on a workpiece is provided. The magnetron sputtering apparatus includes a vacuum chamber, a holder, a magnetron plasma source and a high-power pulse power supply set, wherein the magnetron plasma source includes a base, a magnetron controller and a target. A reactive gas is inputted into the vacuum chamber, and the holder supporting the workpiece is disposed inside the vacuum chamber. The magnetron plasma source is disposed opposite to the workpiece, wherein the magnetron controller is disposed in the base, and the target is disposed on the base. The high-power pulse power supply set is coupled to the vacuum chamber, the magnetron plasma source and the holder, and a high voltage pulse power is inputted to the magnetron plasma source to generate plasma to coat a film on the surface of the workpiece.

Abstract: Disclosed is a method for growing a microcrystalline silicon film on a substrate. The method includes the step of disposing the substrate in a chamber, the step of vacuuming the chamber and heating the substrate, the step of introducing reacting gas into the chamber as a precursor and keeping the pressure in the chamber at a predetermined value and the step of using RF energy in the chamber to dissociate the reacting gas to form plasma for growing the microcrystalline silicon film on the substrate. The reacting gas includes SiH4/Ar mixture and H2. The ratio of SiH4/Ar mixture over H2 is 1:1 to 1:20.