Patents by Inventor Chi-Hong Ching
Chi-Hong Ching has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230343644Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.Type: ApplicationFiled: November 28, 2022Publication date: October 26, 2023Inventors: Chih-Hsun HSU, Shiyu YUE, Jiang LU, Rongjun WANG, Xianmin TANG, Zhenjiang CUI, Chi Hong CHING, Meng-Shan WU, Chun-chieh WANG, Wei LEI, Yu LEI
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Patent number: 11621393Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.Type: GrantFiled: December 4, 2020Date of Patent: April 4, 2023Assignee: Applied Materials, Inc.Inventors: Lin Xue, Chando Park, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala
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Patent number: 11600476Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.Type: GrantFiled: October 18, 2021Date of Patent: March 7, 2023Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, Deepak Jadhav, Ashish Goel, Hanbing Wu, Prashanth Kothnur, Chi Hong Ching
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Patent number: 11552244Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.Type: GrantFiled: March 5, 2021Date of Patent: January 10, 2023Assignee: Applied Materials, Inc.Inventors: Lin Xue, Chi Hong Ching, Rongjun Wang, Mahendra Pakala
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Patent number: 11251364Abstract: Embodiments herein provide film stacks that include a buffer layer; a synthetic ferrimagnet (SyF) coupling layer; and a capping layer, wherein the capping layer comprises one or more layers, and wherein the capping layer, the buffer layer, the SyF coupling layer, or a combination thereof, is not fabricated from Ru.Type: GrantFiled: January 27, 2020Date of Patent: February 15, 2022Assignee: Applied Materials, Inc.Inventors: Lin Xue, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala, Rongjun Wang
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Patent number: 11245069Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one embodiment, the method includes patterning a film stack having a tunneling barrier layer disposed between a magnetic reference layer and a magnetic storage layer disposed on a substrate to remove a portion of the film stack from the substrate until an upper surface of the substrate is exposed, forming a sidewall passivation layer on sidewalls of the patterned film stack and subsequently performing a thermal annealing process to the film stack.Type: GrantFiled: June 30, 2016Date of Patent: February 8, 2022Assignee: Applied Materials, Inc.Inventors: Lin Xue, Jaesoo Ahn, Mahendra Pakala, Chi Hong Ching, Rongjun Wang
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Publication number: 20220037136Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.Type: ApplicationFiled: October 18, 2021Publication date: February 3, 2022Applicant: Applied Materials, Inc.Inventors: Anantha K. Subramani, Deepak Jadhav, Ashish Goel, Hanbing Wu, Prashanth Kothnur, Chi Hong Ching
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Publication number: 20220013716Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one example, a film stack utilized to form a magnetic tunnel junction structure on a substrate includes a pinned layer disposed on a substrate, wherein the pinned layer comprises multiple layers including at least one or more of a Co containing layer, Pt containing layer, Ta containing layer, an Ru containing layer, an optional structure decoupling layer disposed on the pinned magnetic layer, a magnetic reference layer disposed on the optional structure decoupling layer, a tunneling barrier layer disposed on the magnetic reference layer, a magnetic storage layer disposed on the tunneling barrier layer, and a capping layer disposed on the magnetic storage layer.Type: ApplicationFiled: September 27, 2021Publication date: January 13, 2022Inventors: Lin XUE, Jaesoo AHN, Mahendra PAKALA, Chi Hong CHING, Rongjun WANG
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Patent number: 11183375Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.Type: GrantFiled: January 27, 2015Date of Patent: November 23, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Deepak Jadhav, Ashish Goel, Hanbing Wu, Prashanth Kothnur, Chi Hong Ching
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Publication number: 20210320247Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.Type: ApplicationFiled: May 4, 2021Publication date: October 14, 2021Inventors: Lin XUE, Chi Hong CHING, Xiaodong WANG, Mahendra PAKALA, Rongjun WANG
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Patent number: 11133460Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one example, a film stack utilized to form a magnetic tunnel junction structure on a substrate includes a pinned layer disposed on a substrate, wherein the pinned layer comprises multiple layers including at least one or more of a Co containing layer, Pt containing layer, Ta containing layer, an Ru containing layer, an optional structure decoupling layer disposed on the pinned magnetic layer, a magnetic reference layer disposed on the optional structure decoupling layer, a tunneling barrier layer disposed on the magnetic reference layer, a magnetic storage layer disposed on the tunneling barrier layer, and a capping layer disposed on the magnetic storage layer.Type: GrantFiled: February 21, 2017Date of Patent: September 28, 2021Assignee: Applied Materials, Inc.Inventors: Lin Xue, Jaesoo Ahn, Mahendra Pakala, Chi Hong Ching, Rongjun Wang
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Publication number: 20210193914Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.Type: ApplicationFiled: March 5, 2021Publication date: June 24, 2021Inventors: Lin XUE, Chi Hong CHING, Rongjun WANG, Mahendra PAKALA
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Patent number: 11043364Abstract: Embodiments of a process kit for use in a multi-cathode process chamber are disclosed herein. In some embodiments, a process kit includes a rotatable shield having a base, a conical portion extend downward and radially outward from the base, and a collar portion extending radially outward from a bottom of the conical portion; an inner deposition ring having a leg portion, a flat portion extending radially inward from the leg portion, a first recessed portion extending radially inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion disposed above and extending radially inward from the collar portion, a second recessed portion extending inward from the upper flat portion, and a second lip extending upward from an innermost section of the second recessed portion.Type: GrantFiled: June 5, 2017Date of Patent: June 22, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Hanbing Wu, Anantha K. Subramani, Ashish Goel, Deepak Jadhav, Rongjun Wang, Chi Hong Ching
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Patent number: 11011357Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.Type: GrantFiled: February 7, 2018Date of Patent: May 18, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Hanbing Wu, Anantha K. Subramani, Ashish Goel, Xiaodong Wang, Wei W. Wang, Rongjun Wang, Chi Hong Ching
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Patent number: 10998496Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.Type: GrantFiled: April 27, 2020Date of Patent: May 4, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Lin Xue, Chi Hong Ching, Xiaodong Wang, Mahendra Pakala, Rongjun Wang
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Publication number: 20210119119Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.Type: ApplicationFiled: December 4, 2020Publication date: April 22, 2021Inventors: Lin XUE, Chando PARK, Chi Hong CHING, Jaesoo AHN, Mahendra PAKALA
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Patent number: 10957849Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ a first pinning layer and a second pinning layer with a synthetic anti-ferrimagnetic layer disposed therebetween. The first pinning layer in contact with the seed layer can contain a single layer of platinum or palladium, alone or in combination with one or more bilayers of cobalt and platinum (Pt), nickel (Ni), or palladium (Pd), or combinations or alloys thereof, The first pinning layer and the second pinning layer can have a different composition or configuration such that the first pinning layer has a higher magnetic material content than the second pinning layer and/or is thicker than the second pinning layer. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.Type: GrantFiled: March 19, 2019Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Lin Xue, Chi Hong Ching, Rongjun Wang, Mahendra Pakala
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Patent number: 10944050Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.Type: GrantFiled: March 13, 2019Date of Patent: March 9, 2021Assignee: Applied Materials, Inc.Inventors: Lin Xue, Chi Hong Ching, Rongjun Wang, Mahendra Pakala
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Patent number: 10923652Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.Type: GrantFiled: June 21, 2019Date of Patent: February 16, 2021Assignee: Applied Materials, Inc.Inventors: Lin Xue, Chando Park, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala
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Publication number: 20200403152Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.Type: ApplicationFiled: June 21, 2019Publication date: December 24, 2020Inventors: Lin XUE, Chando PARK, Chi Hong CHING, Jaesoo AHN, Mahendra PAKALA