Abstract: A method for multi-link operation (MLO) is provided. The method for MLO may be applied to an apparatus. The method for MLO may include the following steps. A multi-chip controller of the apparatus may assign different data to a plurality of chips of the apparatus, wherein each chip corresponds to one link of multi-links. Each chip may determine whether transmission of the assigned data has failed. A first chip of the chips may transmit the assigned data to an access point (AP) in response to the first chip determining that the transmission of the assigned data has not failed.

Abstract: A method of manufacturing a carrying substrate is provided. At least one circuit component is disposed on a first circuit structure. An encapsulation layer is formed on the first circuit structure and encapsulates the circuit component. A second circuit structure is formed on the encapsulation layer and electrically connected to the circuit component. The circuit component is embedded in the encapsulation layer via an existing packaging process. Therefore, the routing area is increased, and a package substrate requiring a large size has a high yield and low manufacturing cost.

Abstract: A signal generation and transmission system includes a modulator and an RF transceiver. The RF transceiver includes a voltage-controlled oscillator, a power divider, a low-pass filter, a low-noise amplifier and a mixer. The voltage-controlled oscillator receives a signal from the modulator and produces a frequency modulated continuous wave signal. The power divider receives the frequency modulated continuous wave signal from the voltage-controlled oscillator. The low-pass filter receives the frequency modulated continuous wave signal from the power divider. The low-noise amplifier receives, amplifies and transfers a target echo signal. The mixer combines the frequency modulated continuous wave signal from the power divider with the echo signal of target from the low-noise amplifier so that the two signals are added up or subtracted from each other in a frequency band.

Abstract: An upper electrode for use in a plasma processing chamber is provided, which includes a center segment and a plurality of outer segments. The outer segments are attached to the center segment to adjust the area of the overall electrode. Gas distribution holes may be selectively formed on the center and outer segments, or both. By adding or removing the outer segments and stacking layers, the dimension of the electrode, the area of gas spurting region and the thickness of the provided upper electrode may be adjusted.

Abstract: An electron beam apparatus and method are presented for collecting side-view and plane-view SEM imagery. The electron beam apparatus includes an electron source, some intermediate lenses if needed, an objective lens and an in-lens sectional detector. The electron source will provide an electron beam. The intermediate lenses focus the electron beam further. The objective lens is a combination of an immersion magnetic lens and a retarding electrostatic lens focuses the electron beam onto the specimen surface. The in-lens detector will be divided into two or more sections to collect secondary electrons emanating from the specimen with different azimuth and polar angle so that side-view SEM imagery can be obtained.

Abstract: An upper electrode for use in a plasma processing chamber is provided, which includes a center segment and a plurality of outer segments. The outer segments are attached to the center segment to adjust the area of the overall electrode. Gas distribution holes may be selectively formed on the center and outer segments, or both. By adding or removing the outer segments and stacking layers, the dimension of the electrode, the area of gas spurting region and the thickness of the provided upper electrode may be adjusted.

Abstract: An electron beam apparatus and method are presented for regulating wafer surface potential during e-beam (scanning electron microscopy SEM) inspection and review. Regulating surface potential is often critical to detect voltage contrast (VC) defects of specific type, and sometimes, its also an important factor to achieve high quality SEM images.

Abstract: An electron beam apparatus and method are presented for collecting side-view and plane-view SEM imagery. The electron beam apparatus includes an electron source, some intermediate lenses if needed, an objective lens and an in-lens sectional detector. The electron source will provide an electron beam. The intermediate lenses focus the electron beam further. The objective lens is a combination of an immersion magnetic lens and a retarding electrostatic lens focuses the electron beam onto the specimen surface. The in-lens detector will be divided into two or more sections to collect secondary electrons emanating from the specimen with different azimuth and polar angle so that side-view SEM imagery can be obtained.