Abstract: Some embodiments of the present disclosure relate to an integrated chip, including a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. A pair of metal lines are disposed over the dielectric layer and laterally spaced apart from one another by a cavity. A barrier layer structure extends along nearest neighboring sidewalls of the pair of metal lines such that the cavity is defined by inner sidewalls of the barrier layer structure and a top surface of the dielectric layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A simple detachable illumination lamp tube includes a tube unit, a heat-dissipating unit, a light-emitting unit, a support unit and a lateral cover unit. The tube unit has a light-permitting hollow tube. The heat-dissipating unit has a heat-dissipating substrate received in the light-permitting hollow tube. The heat-dissipating substrate has two opposite lateral sides contacting the inner surface of the light-permitting hollow tube. The light-emitting unit has a plurality of strip light-emitting modules received in the light-permitting hollow tube. The strip light-emitting modules are disposed on the heat-dissipating substrate and electrically connected in sequence. The support unit has a plurality of support elements received in the light-permitting hollow tube and disposed between a bottom side of the heat-dissipating substrate and the inner surface of the light-permitting hollow tube. The lateral cover unit has two lateral covers installed on two ends of the light-permitting hollow tube.

Abstract: A lamp head assembly includes an outer head unit, an inner head unit, and an elastic pressing unit. The outer head unit includes at least two conductive pins. The inner head unit is disposed rotatably in the outer head unit. The elastic pressing unit is disposed movably in the outer head unit for selectively positioning the position of the inner head unit relative to the outer head unit or the position of the outer head unit relative to the inner head unit, wherein the elastic pressing unit includes a pressing element selectively exposed from the outer head unit.

Abstract: A lamp head assembly includes an outer head unit, an inner head unit, and an elastic pressing unit. The outer head unit includes at least two conductive pins. The inner head unit is disposed rotatably in the outer head unit. The elastic pressing unit is disposed movably in the outer head unit for selectively positioning the position of the inner head unit relative to the outer head unit or the position of the outer head unit relative to the inner head unit, wherein the elastic pressing unit includes a pressing element selectively exposed from the outer head unit.

Abstract: A simple detachable illumination lamp tube includes a tube unit, a heat-dissipating unit, a light-emitting unit, a support unit and a lateral cover unit. The tube unit has a light-permitting hollow tube. The heat-dissipating unit has a heat-dissipating substrate received in the light-permitting hollow tube. The heat-dissipating substrate has two opposite lateral sides contacting the inner surface of the light-permitting hollow tube. The light-emitting unit has a plurality of strip light-emitting modules received in the light-permitting hollow tube. The strip light-emitting modules are disposed on the heat-dissipating substrate and electrically connected in sequence. The support unit has a plurality of support elements received in the light-permitting hollow tube and disposed between a bottom side of the heat-dissipating substrate and the inner surface of the light-permitting hollow tube. The lateral cover unit has two lateral covers installed on two ends of the light-permitting hollow tube.

Abstract: A process for extracting nanoclay from a layered clay, such as bentonite ore, is disclosed. The process includes mixing the layered clay with 30-500 times by weight of water; keeping the mixture still for about 24 hours to allow the layered clay and water to undergo a hydration reaction; stirring the mixture to form the liquid; keeping the liquid still in the first container for about 48 hours, wherein a precipitate is formed at a bottom of the first container; decanting the liquid that is free from the precipitate from the first container; keeping the liquid free from the precipitate in the second container for 1-180 days, wherein the precipitate is formed at the bottom of the second container; decanting and drying the liquid that is free from the precipitate from the second container to be nanoclays.