Patents by Inventor Chi-Long Tsai
Chi-Long Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11798859Abstract: An electronic device package includes an encapsulated electronic component, a substrate, a conductor and a buffer layer. The encapsulated electronic component includes a redistribution layer (RDL) and an encapsulation layer. The first surface is closer to the RDL than the second surface is. The encapsulation layer includes a first surface, and a second surface opposite to the first surface. The substrate is disposed on the second surface of the encapsulation layer. The conductor is disposed between the substrate and the encapsulated electronic component, and electrically connecting the substrate to the encapsulated electronic component. The buffer layer is disposed between the substrate and the encapsulated electronic component and around the conductor.Type: GrantFiled: May 11, 2021Date of Patent: October 24, 2023Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.Inventors: Chia-Pin Chen, Chia-Sheng Tien, Wan-Ting Chiu, Chi Long Tsai
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Publication number: 20230115954Abstract: An electronic device package and manufacturing method thereof are provided. The electronic device package includes an electronic component including an active surface, a patterned conductive layer disposed on the active surface, an encapsulation layer disposed over the patterned conductive layer, and a buffer layer disposed between the patterned conductive layer and the encapsulation layer. The buffer layer is shaped and sized to alleviate a stress generated due to an interaction between the patterned conductive layer and the encapsulation layer.Type: ApplicationFiled: October 13, 2021Publication date: April 13, 2023Applicant: Advanced Semiconductor Engineering, Inc.Inventors: En Hao HSU, Kuo Hwa TZENG, Chia-Pin CHEN, Chi Long TSAI
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Publication number: 20220384208Abstract: A manufacturing method for manufacturing a package structure is provided. The manufacturing method includes: (a) providing a carrier having a top surface and a lateral side surface, wherein the top surface includes a main portion and a flat portion connecting the lateral side surface, and a first included angle between the main portion and the flat portion is less than a second included angle between the main portion and the lateral side surface; (b) forming an under layer on the carrier to at least partially expose the flat portion; and (c) forming a dielectric layer on the under layer and covering the exposed flat portion.Type: ApplicationFiled: May 27, 2021Publication date: December 1, 2022Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chia-Pin CHEN, Chia Sheng TIEN, Wan-Ting CHIU, Chi Long TSAI, Cyuan-Hong SHIH, Yen Liang CHEN
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Publication number: 20220367306Abstract: An electronic device package includes an encapsulated electronic component, a substrate, a conductor and a buffer layer. The encapsulated electronic component includes a redistribution layer (RDL) and an encapsulation layer. The first surface is closer to the RDL than the second surface is. The encapsulation layer includes a first surface, and a second surface opposite to the first surface. The substrate is disposed on the second surface of the encapsulation layer. The conductor is disposed between the substrate and the encapsulated electronic component, and electrically connecting the substrate to the encapsulated electronic component. The buffer layer is disposed between the substrate and the encapsulated electronic component and around the conductor.Type: ApplicationFiled: May 11, 2021Publication date: November 17, 2022Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chia-Pin CHEN, Chia-Sheng TIEN, Wan-Ting CHIU, Chi Long TSAI
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Patent number: 7501311Abstract: A wafer fabricating method at least includes the steps of providing a wafer having an active surface with a plurality of pads, forming a plurality of bumps on the pad, and forming an organic protective layer on the bump and the active surface. Besides improving the quality of the wafer, the wafer structure according to the invention is oxidation-resistant, thus avoiding the cold-joint problem when soldered to the substrate.Type: GrantFiled: July 19, 2005Date of Patent: March 10, 2009Assignee: Advanced Semiconductor Engineering, Inc.Inventor: Chi-Long Tsai
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Patent number: 7473998Abstract: A method of forming bump protective collars is disclosed. A wafer has an active surface with a plurality of bonding pads and a passivation layer. A plurality of reflowed bumps are formed over the bonding pads. A photoresist is coated on the active surface. Using the reflowed bumps as a photo mask, the photoresist is exposed and developed. After removing the photoresist, a plurality of bump protective collars are formed on the passivation layer and around the reflowed bumps for improving the reliability of the reflowed bumps.Type: GrantFiled: September 22, 2006Date of Patent: January 6, 2009Assignee: Advanced Semiconductor Engineering, Inc.Inventor: Chi-Long Tsai
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Patent number: 7432188Abstract: A structure of bumps formed on an under bump metallurgy layer (UBM layer) and a method for making the same, wherein the structure includes a wafer, a UBM layer, a second photo resist and a bump. The wafer has a plurality of solder pads and a protection layer, and the protection layer covers the surface of the wafer and exposes parts of the solder pads. The UBM layer is disposed on the solder pads and the protection layers, and has an undercut structure. The second photo resist is disposed in the undercut structure. The bump is disposed on the UMB layer, so that the UMB layer will not react with the bump during a reflow process and the problem of stress concentration will be avoided so as to make the bump more stable.Type: GrantFiled: November 20, 2006Date of Patent: October 7, 2008Assignee: Advanced Semiconductor Engineering, Inc.Inventors: Chi-Long Tsai, Wan-Huei Lu
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Patent number: 7402510Abstract: A method for forming bumps is disclosed. First, a substrate having an adhesive, a barrier, and a wetting layer thereon is provided. Next, a patterned photoresist is formed on the wetting layer, in which the patterned photoresist includes at least one opening for exposing a portion of the wetting layer. Next, a solder is deposited in the opening, and a stripping process is performed to remove the patterned photoresist. Next, a first etchant is utilized to perform a first etching process for etching a portion of the wetting and barrier layers by utilizing the solder as a mask, in which the first etchant is selected from the group consisting of: sulfuric acid, phosphoric acid, ferric chloride, ammonium persulfate, and potassium monopersulfate. Next, a second etchant is utilized to perform a second etching process removing a portion of the adhesive layer, and a reflow process is performed to form a bump.Type: GrantFiled: August 7, 2006Date of Patent: July 22, 2008Assignee: Advanced Semiconductor Engineering, Inc.Inventors: En-Chieh Wu, Hiew Watt Ng, Hui-Hung Chen, Chi-Long Tsai
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Publication number: 20070252275Abstract: A chip structure comprising a chip, a redistribution layer, a second passivation layer and at least a bump is provided. The chip has a first passivation layer and at least a bonding pad. The first passivation layer exposes the bonding pad and has at least a recess. The redistribution layer is formed over the first passivation layer and electrically connected to the bonding pad. Furthermore, the redistribution layer also extends from the bonding pad to the recess. The second passivation layer is formed over the first passivation layer and the redistribution layer. The second passivation layer also has an opening that exposes the redistribution layer above the recess. The bump passes through the opening and connects electrically with the redistribution layer above the recess.Type: ApplicationFiled: July 2, 2007Publication date: November 1, 2007Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.Inventors: Min-Lung Huang, Chi-Long Tsai, Chao-Fu Weng, Ching-Huei Su
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Publication number: 20070218675Abstract: A method for manufacturing a bump of wafer level package is provided. First, a wafer with multiple pads and a passivation layer exposing the pads is provided, wherein the passivation layer between the pads has scribe lines for dividing chips after the package process. Next, a conducting layer is formed on the wafer, wherein the conducting layer is electrically connected to the pads and filled into the scribe line. Later, a photoresist layer is formed on the conducting layer. The photoresist layer is then patterned to form an opening exposing the conducting layer above the pads and to form at least one opening in the region outside the pads without exposing the conducting layer. Finally, a bump is formed in the opening above the pads to connect with the conducting layer.Type: ApplicationFiled: March 16, 2006Publication date: September 20, 2007Inventor: Chi-Long Tsai
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Patent number: 7261828Abstract: A method of forming a plurality of bumps over a wafer mainly comprises providing the wafer having a plurality of bonding pads formed thereon, forming an under bump metallurgy (UBM) layer over the bonding pads wherein the UBM layer includes an adhesive layer, for example a titanium (Ti) layer or an aluminum (Al) layer, and at least one electrically conductive layer formed on the adhesive layer, removing the portions of the electrically conductive layer located outside the bonding pads, forming a plurality of bumps over the residual portions of the electrically conductive layer disposed above the bonding pads, etching the adhesive layer located outside the bumps, and then reflowing the bumps.Type: GrantFiled: January 9, 2004Date of Patent: August 28, 2007Assignee: Advanced Semiconductor Engineering, Inc.Inventors: En-Chieh Wu, Chao-Fu Weng, Chi-Long Tsai, Min-Lung Huang, Chia-Ming Chuang
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Patent number: 7253519Abstract: A chip structure comprising a chip, a redistribution layer, a second passivation layer and at least a bump is provided. The chip has a first passivation layer and at least a bonding pad. The first passivation layer exposes the bonding pad and has at least a recess. The redistribution layer is formed over the first passivation layer and electrically connected to the bonding pad. Furthermore, the redistribution layer also extends from the bonding pad to the recess. The second passivation layer is formed over the first passivation layer and the redistribution layer. The second passivation layer also has an opening that exposes the redistribution layer above the recess. The bump passes through the opening and connects electrically with the redistribution layer above the recess.Type: GrantFiled: June 9, 2004Date of Patent: August 7, 2007Assignee: Advanced Semiconductor Engineering, Inc.Inventors: Min-Lung Huang, Chi-Long Tsai, Chao-Fu Weng, Ching-Huei Su
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Publication number: 20070134905Abstract: The present invention relates to a method for mounting bumps on an under bump metallurgy layer (UBM layer).Type: ApplicationFiled: December 13, 2006Publication date: June 14, 2007Inventors: Chi-Long Tsai, Wan-Huei Lu
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Publication number: 20070117368Abstract: The present invention relates to a structure of bumps forming on an under bump metallurgy layer (UBM layer) and a method for making the same. The structure comprises a wafer, a UBM layer, a second photo resist and a bump. The wafer has a plurality of solder pads and a protection layer, and the protection layer covers the surface of the wafer and exposes parts of the solder pads. The UBM layer is disposed on the solder pads and the protection layer and has an undercut structure. The second photo resist is disposed in the undercut structure. The bump is disposed on the UMB layer. Whereby, the UMB layer will not be reacted with bump in a reflow process and the problem of stress concentration will be avoided so as to make the bump more stable.Type: ApplicationFiled: November 20, 2006Publication date: May 24, 2007Inventors: Chi-Long Tsai, Wan-Huei Lu
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Publication number: 20070087546Abstract: A method for forming bumps is disclosed. First, a substrate having an adhesive, a barrier, and a wetting layer thereon is provided. Next, a patterned photoresist is formed on the wetting layer, in which the patterned photoresist includes at least one opening for exposing a portion of the wetting layer. Next, a solder is deposited in the opening, and a stripping process is performed to remove the patterned photoresist. Next, a first etchant is utilized to perform a first etching process for etching a portion of the wetting and barrier layers by utilizing the solder as a mask, in which the first etchant is selected from the group consisting of: sulfuric acid, phosphoric acid, ferric chloride, ammonium persulfate, and potassium monopersulfate. Next, a second etchant is utilized to perform a second etching process removing a portion of the adhesive layer, and a reflow process is performed to form a bump.Type: ApplicationFiled: August 7, 2006Publication date: April 19, 2007Inventors: En-Chieh Wu, Hiew Watt NG, Hui-Hung Chen, Chi-Long Tsai
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Publication number: 20070015312Abstract: A method of forming bump protective collars is disclosed. A wafer has an active surface with a plurality of bonding pads and a passivation layer. A plurality of reflowed bumps are formed over the bonding pads. A photoresist is coated on the active surface. Using the reflowed bumps as a photo mask, the photoresist is exposed and developed. After removing the photoresist, a plurality of bump protective collars are formed on the passivation layer and around the reflowed bumps for improving the reliability of the reflowed bumps.Type: ApplicationFiled: September 22, 2006Publication date: January 18, 2007Inventor: Chi-Long Tsai
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Patent number: 7129111Abstract: A method of forming bump protective collars is disclosed. A wafer has an active surface with a plurality of bonding pads and a passivation layer. A plurality of reflowed bumps are formed over the bonding pads. A photoresist is coated on the active surface. Using the reflowed bumps as a photo mask, the photoresist is exposed and developed. After removing the photoresist, a plurality of bump protective collars are formed on the passivation layer and around the reflowed bumps for improving the reliability of the reflowed bumps.Type: GrantFiled: July 21, 2004Date of Patent: October 31, 2006Assignee: Advanced Semiconductor Engineering, Inc.Inventor: Chi-Long Tsai
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Patent number: 7105433Abstract: The present invention provides a method for treating the wafer surface, suitable for removing residues on the wafer surface. The method includes forming a photo-sensitive material layer over the wafer surface covering the bumps and the under bump metallurgy layer on the wafer surface. Using the bumps as masks, the photo-sensitive material layer is exposed and developed, to expose the wafer surface between the bumps. A wet etching process is then performed to remove residues on the exposed wafer surface and then the remained photo-sensitive material layer is removed. Therefore, no residues remain on the wafer surface, and the yield of the bumps is increased.Type: GrantFiled: March 2, 2004Date of Patent: September 12, 2006Assignee: Advanced Semiconductor Engineering, Inc.Inventors: Chi-Long Tsai, Min-Lung Huang
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Patent number: 7041590Abstract: A method for forming conductive bumps is applied to a wafer. An under-bump-metallurgy structure and a first photo resist layer are subsequently formed on the wafer. The first photo resist layer, such as a dry film, is patterned to have some openings and then a second photo resist layer is filled into the openings, in which the thickness of the second photo resist layer is fewer than or equal to the thickness of the first photo resist layer. The second photo resist layer is then patterned to have some openings. Next, a conductive layer is formed in the openings and then both the first and second photo resist layers are removed. With the conductive layer as a mask, the exposed under-bump-metallurgy structure is removed and then the conductive layer is reflowed to form some conductive bumps. With two kinds of photo resist layers, the conductive bumps can be provided with increased heights and decreased pitches.Type: GrantFiled: July 15, 2004Date of Patent: May 9, 2006Assignee: Advanced Semiconductor Engineering Inc.Inventors: Tsung-Yen Tseng, Zhi-Hao Chen, Chi-Long Tsai
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Publication number: 20060094223Abstract: A wafer fabricating method at least includes the steps of providing a wafer having an active surface with a plurality of pads, forming a plurality of bumps on the pad, and forming an organic protective layer on the bump and the active surface. Besides improving the quality of the wafer, the wafer structure according to the invention is oxidation-resistant, thus avoiding the cold-joint problem when soldered to the substrate.Type: ApplicationFiled: July 19, 2005Publication date: May 4, 2006Applicant: Advanced Semiconductor Engineering, Inc.Inventor: Chi-Long Tsai