Patents by Inventor Chi-Ping WEN

Chi-Ping WEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mask for EUV lithography and method of manufacturing the same
    Patent number: 11249384
    Abstract: A method of manufacturing an extreme ultraviolet (EUV) lithography mask includes forming an image pattern in an absorption layer of EUV mask blank. The EUV mask blank includes: a multilayer stack including alternating molybdenum (Mo) and silicon (Si) layers disposed over a first surface of a mask substrate, a capping layer disposed over the multilayer stack, and an absorption layer disposed over the capping layer. A border region surrounds the image pattern having a trench wherein the absorption layer, the capping layer and at least a portion of the multilayer stack are etched. Concave sidewalls are formed in the border region or an inter-diffused portion is formed in the multilayer stack of the trench.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: February 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Cheng Hsu, Chi-Ping Wen, Tzu Yi Wang, Ta-Cheng Lien, Hsin-Chang Lee
  • MASK FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200004133
    Abstract: A method of manufacturing an extreme ultraviolet (EUV) lithography mask includes forming an image pattern in an absorption layer of EUV mask blank. The EUV mask blank includes: a multilayer stack including alternating molybdenum (Mo) and silicon (Si) layers disposed over a first surface of a mask substrate, a capping layer disposed over the multilayer stack, and an absorption layer disposed over the capping layer. A border region surrounds the image pattern having a trench wherein the absorption layer, the capping layer and at least a portion of the multilayer stack are etched. Concave sidewalls are formed in the border region or an inter-diffused portion is formed in the multilayer stack of the trench.
    Type: Application
    Filed: June 14, 2019
    Publication date: January 2, 2020
    Inventors: Pei-Cheng HSU, Chi-Ping WEN, Tzu Yi WANG, Ta-Cheng LIEN, Hsin-Chang LEE