Abstract: The centrifugally tensional, horizontally recrystallizing process for forming the dielectric isolated semiconductor starting wafer materials is described. Wafer with oxide and deposited polycrystalline silicon film, is put on top of a horizontal rotating stage, and secured by vacuum. Recrystallization of the polycrystalline film into single crystalline is carried out by concentric heating elements located directly above and aligned concentrically with the spinning wafer. The recrystallization will proceed from the center of the wafer radially outward into the film area that covers the whole wafer.