Abstract: A method of making a semiconductor device includes forming a first active region on a first side of a substrate. The method further includes forming a first source/drain (S/D) electrode surrounding a first portion of the first active region. The method further includes forming an S/D connect via extending through the substrate. The method further includes flipping the substrate. The method further includes forming a second active region on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate. The method further includes forming a second S/D electrode surrounding a first portion of the second active region, wherein the S/D connect directly contacts both the first S/D electrode and the second S/D electrode.

Abstract: A method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. The method further includes depositing a spacer material against a sidewall of the first transistor. The method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. The method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. The method further includes manufacturing a self-aligned interconnect structure (SIS) extending along the spacer material, wherein the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.

Abstract: A method of making a polylactic acid based article includes: (a) providing a sheet having a crystallinity ranging from 0% to 15% and including a polylactic acid polymer composition, the polylactic acid polymer composition having a polylactic acid polymer, a copolyester polymer, and a crystal nucleating agent; (b) heating the sheet to maintain a surface of the sheet at a temperature ranging from 95° C. to 105° C. while keeping the crystallinity of the sheet lower than 20%; and (c) thermoforming the sheet in a mold having a temperature ranging from 95° C. to 130° C. so as to form a polylactic acid based article having a crystallinity ranging from 35% to 45%.

Abstract: A copolyester composition includes: an aliphatic-aromatic copolyester; a coupling agent including a compound having an epoxy functional group; and a cocatalyst including a carboxylate of manganese and a carboxylate of zinc, wherein a weight ratio of the carboxylate of manganese to the carboxylate of zinc ranges from 1:3 to 3:1, and the cocatalyst is present in an amount ranging from 0.03-0.2 part by weight based on 100 parts by weight of the aliphatic-aromatic copolyester.

Abstract: A copolyester composition includes: an aliphatic-aromatic copolyester; a coupling agent including a compound having an epoxy functional group; and a cocatalyst including a carboxylate of manganese and a carboxylate of zinc, wherein a weight ratio of the carboxylate of manganese to the carboxylate of zinc ranges from 1:3 to 3:1, and the cocatalyst is present in an amount ranging from 0.03-0.2 part by weight based on 100 parts by weight of the aliphatic-aromatic copolyester.

Abstract: A method of making a polylactic acid based article includes: (a) providing a sheet having a crystallinity ranging from 0% to 15% and including a polylactic acid polymer composition, the polylactic acid polymer composition having a polylactic acid polymer, a copolyester polymer, and a crystal nucleating agent; (b) heating the sheet to maintain a surface of the sheet at a temperature ranging from 95° C. to 105° C. while keeping the crystallinity of the sheet lower than 20%; and (c) thermoforming the sheet in a mold having a temperature ranging from 95° C. to 130° C. so as to form a polylactic acid based article having a crystallinity ranging from 35% to 45%.