Patents by Inventor Chi-Wing Tsao

Chi-Wing Tsao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CVD lateral epitaxial growth of silicon over insulators
    Patent number: 4522662
    Abstract: A method for growing Silicon On Insulator (SOI) films using only conventional very large scale integration (VLSI) techniques is provided. By sequentially varying the flow of HCL gas during the vertical-growth, lateral-overgrowth, coalescence, and planarization stages of the epitaxial deposition process allows the formation of high-quality SOI films on wider oxide stripes suitable for general transistor applications.
    Type: Grant
    Filed: August 12, 1983
    Date of Patent: June 11, 1985
    Assignee: Hewlett-Packard Company
    Inventors: Donald R. Bradbury, Chi-Wing Tsao, Theodore I. Kamins