Abstract: An electrical connection includes a first driving substrate, a first adhesive layer, a first bonding pad a first bonding pad and a second bonding pad. The first driving substrate includes a first substrate and a first dielectric layer on the first substrate. The first adhesive layer is at a sidewall of the first dielectric layer of the first driving substrate. The first bonding pad is on the first substrate of the first driving substrate and in contact with the first adhesive layer, and the first bonding pad includes a plurality of grains, the grains are connected with each other, the grains include [111]-oriented copper grains, and a maximum width of the first bonding pad is equal to or less than 8 microns. The second bonding pad is on the first bonding pad.

Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A metal mask includes: a mask body having two opposite first side edges along a first direction and two opposite second side edges along a second direction, and each of the first side edges having a first length. The mask body includes an open slot region, two first fixing regions, and two first clamping regions, where the two first fixing regions are positioned on two opposite sides of the open slot region, respectively, and each of the first clamping regions is positioned between each of the first fixing regions and each of the first side edges. A first gap is formed in each of the first side edges, the first gap has a first opening length in the first direction, and a ratio of the first opening length to the first length being between 0.2 and 0.8. The metal mask may improve the problem of wrinkles.

Abstract: A linear drive and a method for correcting a systematic error of the linear drive are provided. The linear drive includes a fixed assembly, a movable assembly, a first force sensor and a second force sensor. The movable assembly is movably connected to one end of the fixed assembly, and the movable assembly capable of being movable in a direction towards or away from the fixed assembly. The first force sensor is disposed at one end of the fixed assembly away from the movable assembly and configured for detecting a force acting on the first force sensor from the fixed assembly towards the movable assembly. The second force sensor is disposed at one end of the movable assembly away from the fixed assembly and configured for detecting a force acting on the second force sensor from the movable assembly toward the fixed assembly.

Abstract: The present disclosure relates to the technical field of computers, and in particular to a game character control method and apparatus, a storage medium and an electronic device. In the method, game state information of a game match is adjusted according to game alignments to which an intelligent agent and a player character belong, so as to obtain target state information, a target game intention of the intelligent agent is determined according to the target state information, then a target operation of the intelligent agent in the game match is determined according to the target state information and the target game intention, and the target operation executed by the intelligent agent may be adjusted according to different game situations, so that the intelligent agent can flexibly adjust game actions to provide different playing methods in a human-computer battle.

Abstract: A method, apparatus, electronic device and storage medium for combat control are provided. The method comprising: determining, according to current game status data and communication information of the target object, a communicated strategic intention of a target object, wherein the communicated strategic intention characterizes a combat target expressed by the communication information; determining, according to the game status data, an initial strategic intention of a virtual object in response to the game state data; determining, according to the initial strategic intention and the communicated strategic intention, the target strategic intention of the virtual object; determining a response action of the virtual object based on the target strategic intention, and controlling the virtual object to perform the response action.

Abstract: Related to are a method and apparatus for game role interaction control, a storage medium, and an electronic device. In the method, a target communication period of an intelligent agent may be dynamically adjusted by the current signal communication information triggered by a game match and the current game state information of the game match, to adjust the frequency of the intelligent agent for sending communication messages in the game match. Therefore, in the case of active communication of real players, the intelligent agent can be prevented from frequently sending communication messages, resulting in a conflict with the communication messages of the real players, and the interference of excessive communication messages on the real players can also be prevented. Moreover, in the case of no communication of the real players, the communication willingness of the real players can be motivated, thereby ensuring a good battle atmosphere for the game match.

Abstract: The disclosure presents a new computer based model framework to predict drug effects over multiple time and spatial scales from the drug chemistry to the cardiac rhythm. The disclosure presents a new computer based model framework to predict drug effects from the level of the receptor interaction to the cardiac rhythm.

Abstract: The present disclosure relates to a game interactive control method and apparatus, a storage medium and an electronic device, and relates to the technical field of computers. According to the method, by determining the game intention of the agent according to the game state information, and inputting the game state information, the game communication information and the game intention into the communication prediction model, the target communication content corresponding to the agent is obtained, and then the target communication content is outputted, so that the player character determines a game action to be executed by the agent based on the target communication content. This can not only improve the gaming activity when the real player is battling against the agent, but also enable the real player to know the game intention of the agent so as to cooperate with the agent and improve the gaming quality.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and nanostructures suspended over the substrate. The semiconductor structure also includes a gate structure wrapping around the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure also includes a contact vertically over the source/drain structure and a first conductive structure vertically over the gate structure. The semiconductor structure also includes a second conductive structure in contact with a top surface of the first conductive structure and a top surface of the contact and including an extending portion laterally sandwiched between the first conductive structure and the contact.

Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.

Abstract: According to an aspect, a computer-implemented method includes accessing a profile of a user that indicates a likelihood that the user will execute each of a plurality of types of processing when training a new AI model. A runtime matrix that includes identifiers of runtime environments is accessed. The matrix also includes, for each of the runtime environments, a frequency of use of the runtime environment to train previously trained AI models using each of the plurality of types of processing. One or more of the runtime environments is selected for output to the user based at least in part on the profile of the user and the runtime matrix. Identifiers of the selected one or more of the runtime environments are output to a user interface of the user along with a suggestion to use one of the selected one or more of the runtime environments.

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

Abstract: A resonant switching power converter circuit including: a switching converter, a control circuit and a pre-charging circuit; wherein the control circuit controls a first switch of the switching converter in a pre-charging mode, so as to control electrical connections between a first power and at least one of plural capacitors of the switching converter, and to control other switches of the switching converter, so as to control the pre-charging circuit to charge at least one capacitor to a predetermined voltage; wherein in a start-up mode, the plural switches control electrical connections of the capacitors according to first and second operation signals, such that after the pre-charging mode ends, the switching converter subsequently operates in the start-up mode; wherein in the start-up mode, the first and second operation signals have respective ON periods, and the time lengths of the ON periods increase gradually.

Abstract: Provided is a method for treating cancer by administering to a subject in need thereof with a pharmaceutical composition including a benzenesulfonamide derivative in combination with a cancer immunotherapeutic agent such as the immune check point inhibitor (ICI).

Abstract: A contact lens comprises an optical zone and a peripheral zone. The optical zone is used for vision correction. The peripheral zone surrounds the optical zone. The optical zone and the peripheral zone jointly define a geometric center and a horizontal axis passing through the geometric center. Two stabilization zones symmetrically arranged relative to the geometric center are formed in the peripheral zone. These stabilization zones gradually thicken relative to a base curved surface of the peripheral zone.

Abstract: An electronic device including an electronic unit and a redistribution layer is disclosed. The electronic unit has connection pads. The redistribution layer is electrically connected to the electronic unit and includes a first insulating layer, a first metal layer and a second insulating layer. The first insulating layer is disposed on the electronic unit and has first openings disposed corresponding to the connection pads. The first metal layer is disposed on the first insulating layer and electrically connected to the electronic unit through the connection pads. The second insulating layer is disposed on the first metal layer. The first insulating layer includes first filler particles, and the second insulating layer includes second filler particles. The first filler particles have a first maximum particle size, the second filler particles have a second maximum particle size, and the second maximum particle size is greater than the first maximum particle size.

Abstract: A method includes following steps. A semiconductor fin is formed extending from a substrate. A gate structure is formed extending across the semiconductor fin. Recesses are etched in the semiconductor fin. Source/drain epitaxial structures are formed in the recesses in the semiconductor fin. Formation of each of the source/drain epitaxial structures comprises performing a first epitaxy growth process to form a bar-shaped epitaxial structure in one of the recesses, and performing a second epitaxy growth process to form a cladding epitaxial layer cladding on the bar-shaped epitaxial structure. The bar-shaped epitaxial structure has a lower phosphorous concentration than the cladding epitaxial layer.

Abstract: The present disclosure relates to methods for the treatment of diseases or disorders (e.g., cancer) with mTOR inhibitors. Specifically, the disclosure relates to methods of treating a subject having a cancer by administering a particular dosage of an mTOR inhibitor. In some embodiments this disclosure includes methods for delaying, preventing, or treating acquired resistance to RAS inhibitors using a dosage of an mTOR inhibitor. In some embodiments, this disclosure relates to methods of treating or preventing adverse events associated with administration of an mTOR inhibitor using tacrolimus.