Patents by Inventor Chi-Ying Hsieh

Chi-Ying Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11994580
    Abstract: An electronic device includes a plurality of radars and at least one processor. Each of the radars includes at least one transmitting antenna and a plurality of receiving antennas arranged as a two-dimensional array antenna. The processor converts the RF signal received by the receiving antennas into a ranging profile that records the distance between each of the receiving antennas and the target and the receiving intensity corresponding to the distance. The processor generates a voxel profile to indicate the relationship between the distance and the receiving intensity in three-dimensional space. The processor performs a point generation algorithm to generate a plurality of points in three-dimensional space according to the voxel profile and the receiving intensity threshold. The processor performs a cluster analysis algorithm to identify a plurality of target points corresponding to the target among the points to obtain the position of the target.
    Type: Grant
    Filed: July 14, 2021
    Date of Patent: May 28, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Tsung-Ying Hsieh, Chi-Hsuan Lee
  • Patent number: 11964881
    Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: April 23, 2024
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Pu-Wei Wu, Yi-Chieh Hsieh, Han-Yi Wang, Kuang-Chih Tso, Tzu-Ying Chan, Chung-Kai Chang, Chi-Shih Chen, Yu-Ting Cheng
  • Publication number: 20240120812
    Abstract: An integrated motor and drive assembly is disclosed and includes a housing, a motor and a drive. The housing includes a motor-accommodation portion and a drive-accommodation portion. The drive includes a power board and a control board. The power board is made of a high thermal conductivity substrate and includes a power element and an encoder disposed on the first side, the first side faces the motor, the power board and the motor are stacked along a first direction, and the second side contacts the housing to from a heat-dissipating route. The control board is disposed adjacent to the power board. The control board and the power board are arranged along a second direction perpendicular to the first direction, and the first direction is parallel to an axial direction of the motor. A part of the power board and a part of the control board are directly contacted to form an electrical connection.
    Type: Application
    Filed: July 17, 2023
    Publication date: April 11, 2024
    Inventors: Chi-Hsiang Kuo, Yi-Yu Lee, Zuo-Ying Wei, Yuan-Kai Liao, Wen-Cheng Hsieh
  • Patent number: 10622245
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Grant
    Filed: June 16, 2019
    Date of Patent: April 14, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin
  • Publication number: 20190378752
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Application
    Filed: June 16, 2019
    Publication date: December 12, 2019
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin
  • Patent number: 10373861
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: August 6, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin