Abstract: A method of producing a reclaimed rubber made of recycled shoe material waste includes the following steps. Step S1: collect a scrap rubber which is the shoe material waste. Step S2: grind the scrap rubber to form scrap rubber granules. Step S3: devulcanize the scrap rubber granules to form a reclaimed rubber. A reclaimed material for manufacturing shoes includes a reclaimed rubber formulation and a crosslinking agent, wherein the reclaimed rubber formulation is constituted by compounding a basic rubber formulation and the reclaimed rubber, wherein the reclaimed material for manufacturing shoes includes 65-94.8 wt % of the basic rubber formulation, 5-30 wt % of the reclaimed rubber, and 0.2 wt % to 5 wt % of crosslinking agent. Mechanical properties of the reclaimed material for manufacturing shoes meet required standards of shoe outsole material. A method of consuming rubber waste produced during the shoe manufacturing process is disclosed herein.

Abstract: Examples disclosed herein relate to a mechanism for dynamically adjusting wait time values. Some disclosed examples enable transmitting, by a source entity, a request for an action to a target entity. The action may be generated by the source entity. Some examples enable identifying a first wait time value for the source entity that indicates an amount of time that the source entity is allowed to wait for a response from the target entity between the transmission of the request and a timeout state. Some examples may enable dynamically adjusting the first wait time value based on an entity specification of the source or target entity to generate a second wait time value. Some examples may enable allowing the source entity to wait for the response from the target entity for at least the amount of time indicated in the second wait time value.

Abstract: A copolymer based on dimethyl carbonate and a method of preparing the same are provided. The copolymer based on dimethyl carbonate has a unit from dimethyl carbonate, diols, and a modification monomer. The copolymer based on dimethyl carbonate can be obtained by proceeding transesterification and polycondenastion.

Abstract: Examples disclosed herein relate to a mechanism for dynamically adjusting wait time values. Some disclosed examples enable transmitting, by a source entity, a request for an action to a target entity. The action may be generated by the source entity. Some examples enable identifying a first wait time value for the source entity that indicates an amount of time that the source entity is allowed to wait for a response from the target entity between the transmission of the request and a timeout state. Some examples may enable dynamically adjusting the first wait time value based on an entity specification of the source or target entity to generate a second wait time value. Some examples may enable allowing the source entity to wait for the response from the target entity for at least the amount of time indicated in the second wait time value.

Abstract: A hydrogenation catalyst is provided. The hydrogenation catalyst has a nanonickel carrier, and noble metal nanoparticles selected from Pd, Pt, Ru, Rh, or a mixture thereof, which are mounted onto the nanonickel carrier. Moreover, a method of manufacturing a hydrogenation catalyst is provided, and has steps of (1) preparing an aqueous solution containing nickel ions; (2) adding a first reducing agent in the aqueous solution containing nickel ions to form a reactant solution; (3) applying a magnetic field to the reactant solution for a first duration to obtain a nanonickel carrier; (4) preparing a noble metal solution; and (5) placing the nanonickel carrier in the noble metal solution for a second duration so that noble metal nanoparticles are mounted onto the nanonickel carrier.

Abstract: A copolymer based on dimethyl carbonate and a method of preparing the same are provided. The copolymer based on dimethyl carbonate has a unit from dimethyl carbonate, diols, and a modification monomer. The copolymer based on dimethyl carbonate can be obtained by proceeding transesterification and polycondenastion.

Abstract: A hydrogenation catalyst is provided. The hydrogenation catalyst has a nanonickel carrier, and noble metal nanoparticles selected from Pd, Pt, Ru, Rh, or a mixture thereof, which are mounted onto the nanonickel carrier. Moreover, a method of manufacturing a hydrogenation catalyst is provided, and has steps of (1) preparing an aqueous solution containing nickel ions; (2) adding a first reducing agent in the aqueous solution containing nickel ions to form a reactant solution; (3) applying a magnetic field to the reactant solution for a first duration to obtain a nanonickel carrier; (4) preparing a noble metal solution; and (5) placing the nanonickel carrier in the noble metal solution for a second duration so that noble metal nanoparticles are mounted onto the nanonickel carrier.

Abstract: An extended film and a manufacturing method thereof are provided. The extended film includes a poly(lactic acid) and a block copolymer, wherein the block polymer includes a first block, a second block and a third block that connected with each other by chemical bonds. The extended film is formed by steps of mixing poly(lactic acid) and the block copolymer to form a mixture, compressing the mixture to form a board body and extending the board body to form an extended film, thereby forming an extended film having properties of high thermal-resistance and high transparency, the film thus obtained is applicable for packaging use.

Abstract: A touch panel, having a transparent region and a decoration region disposed on at least one side of the transparent region, includes a first substrate, a first decoration layer, a touch sensing unit, a first conductive line and a first opaque reflection layer. The first decoration layer is disposed on the first substrate and the first decoration layer is disposed in the decoration region. The touch sensing unit is at least disposed in the transparent region. The first conductive line is disposed in the decoration region and electrically connected to the touch sensing unit. The first opaque reflection is disposed on the first decoration layer and the first opaque reflection is disposed in the decoration region. The first decoration layer is disposed between the first substrate and the first opaque reflection layer.

Abstract: A touch panel including a substrate, first sensing series and optical matching stacked structures is provided. Each first sensing series includes first sensing pads and bridge structures, and two adjacent first sensing pads are connected along the first direction through one of the bridge structure. Each optical matching stacked structure includes a first optical matching pattern and a second optical matching pattern disposed between the first optical matching pattern and the bridge structure, and the optical matching stacked structures are disposed on a surface of the bridge structures that faces to a user so as to reduce a reflectivity of light along a direction of view in areas where the bridge structures are located.

Abstract: A lithographic mask reticle includes a first mask region having a first mask pattern configured for use in fabrication of electronic circuit structures, and a second mask region having a second mask pattern configured for use in fabrication of test structures. The second mask pattern includes all categories of structural patterns containing in the first mask pattern.

Abstract: A touch panel has a touch control region and a peripheral region disposed adjacent to at least one side of the touch control region. The touch panel includes a substrate, a first index matching layer, a decoration layer, and a touch element. The first index matching layer covers a surface of the substrate. The first index matching layer has a first refractive index greater than that of the substrate. The decoration layer is disposed in the peripheral region. The touch element is disposed on the first index matching layer and at least in the touch control region.

Abstract: A touch panel including a substrate, a plurality of first electrode series and a plurality of second electrode series is provided. The first electrode series are disposed on the substrate. Each of the first electrode series extends along a first direction and includes a plurality of first electrode pads and a plurality of bridge structures. Two adjacent first electrode pads are connected along the first direction through one of the bridge structures, where each of the bridge structures includes a conductive pattern and an optical matching pattern disposed on a surface of the conductive pattern that faces to a user so as to reduce a reflectivity of light along a viewing direction in areas where the bridge structures are disposed.

Abstract: An extended film and a manufacturing method thereof are provided. The extended film includes a poly(lactic acid) and a block copolymer, wherein the block polymer includes a first block, a second block and a third block that connected with each other by chemical bonds. The extended film is formed by steps of mixing poly(lactic acid) and the block copolymer to form a mixture, compressing the mixture to form a board body and extending the board body to form an extended film, thereby forming an extended film having properties of high thermal-resistance and high transparency, the film thus obtained is applicable for packaging use.

Abstract: A lithographic mask reticle includes a first mask region having a first mask pattern configured for use in fabrication of electronic circuit structures, and a second mask region having a second mask pattern configured for use in fabrication of test structures. The second mask pattern includes all categories of structural patterns containing in the first mask pattern.

Abstract: System and method of selective optical pattern enhancement for semiconductor manufacturing. A method for performing a photolithography process includes providing a reticle pattern for a photomask, the reticle pattern including one or more active areas, the photomask including at least a first active area and a first insulation area. The method also includes identifying a first structure pattern defined by the reticle pattern. Additionally, the method includes defining a block area covering the first structure, the block area being positioned within the active area. The method further includes applying at least a first optical proximity correction to the reticle pattern to form a corrected pattern, the first optical proximity correction being restricted to the block area. Also, the method includes transferring the corrected pattern to a wafer.

Abstract: A method for performing a photolithography process includes providing a reticle on a projection apparatus, the reticle having a test pattern defined thereon, the test pattern including a plurality of one-dimensional structures and a plurality of two-dimensional structures. The test pattern defined on the reticle is transferred to at least one area on a wafer. The projection apparatus is focused on the test pattern transferred on the wafer during a photolithography process to perform a process monitoring.

Abstract: An alignment film for spontaneously aligning liquid crystal is used to align a plurality of liquid crystal grains and comprises a first substrate, a second substrate, a liquid crystal layer, a first transparent conductive layer, a second transparent conductive layer, a first alignment film and a second alignment film. The first and second alignment films are made of anodic aluminum oxide and have a plurality of nanometric pores respectively. The liquid crystal layer is interposed between the first and second alignment films. The nanometric pores of the first and second alignment films induce the liquid crystal grains to align spontaneously. Thereby, the problems of contamination, denatured material and non-uniform alignment, which are caused by the conventional liquid crystal alignment technology, can be solved. Further, the fabrication process of the alignment film can integrate with the current LCD process to fabricate a large-size LCD panel.

Abstract: A method for performing a photolithography process includes providing a reticle on a projection apparatus, the reticle having a test pattern defined thereon, the test pattern including a plurality of one-dimensional structures and a plurality of two-dimensional structures. The test pattern defined on the reticle is transferred to at least one area on a wafer. The projection apparatus is focused on the test pattern transferred on the wafer during a photolithography process to perform a process monitoring.

Abstract: System and method of selective optical pattern enhancement for semiconductor manufacturing. A method for performing a photolithography process includes providing a reticle pattern for a photomask, the reticle pattern including one or more active areas, the photomask including at least a first active area and a first insulation area. The method also includes identifying a first structure pattern defined by the reticle pattern. Additionally, the method includes defining a block area covering the first structure, the block area being positioned within the active area. The method further includes applying at least a first optical proximity correction to the reticle pattern to form a corrected pattern, the first optical proximity correction being restricted to the block area. Also, the method includes transferring the corrected pattern to a wafer.