Abstract: A heat dissipation structure, includes: a lead frame, including a high temperature pad and a low temperature pad, the high temperature pad and the low temperature pad being two portions in the lead frame which are separated from each other, wherein a high heat generation component is disposed on the high temperature pad; and a high thermal conduction element, including two sides which are respectively directly connected with the high temperature pad and the low temperature pad, to dissipate the heat energy from the high heat generation component to the low temperature pad.

Abstract: The present invention is related to a display control device adapted to be used in a communication apparatus providing an information for transmitting the information to a display and transmitting the information to a second device when the information is required by the second device, which includes a buffer device storing therein the information, a decoder electrically connected to the buffer device for decoding the information stored in the buffer device and outputting the decoded information to the display, a bidirectional transmission device electrically connected to the buffer device for transmitting the information to the display and transmitting the information to the second device when the information is required by the second device, and a controller electrically connected to the bidirectional transmission device for controlling a transmission between the bidirectional transmission device and the second device.

Abstract: The present invention provides a fixed resistance sense-routed high density parallel ROM device for maintaining the resistance of a buried N+ region on a sense route constant. When data is read from a ROM cell matrix, the selection of different ROM cell transistors does not change the resistance of the buried N+ region on the sense route and thus enables a simplified design of a sense amplifier. The inactive select gate or transfer gate that is activated by the select line can be isolated by ion implantation for forming a buried P+ isolation and thus avoiding the narrowing or the cutting-off of the width of the active transfer gate or select gate due to ion diffusion.