Abstract: A thin-film optoelectric device is disclosed comprising a functional layer structure (30) enclosed between a first barrier layer structure (20) and a second barrier layer structure (40), the device having an open, electrically interconnected conductive structure (10) that is embedded within the first barrier layer structure (20), that comprises at least one elongated element (12a, 12b, 12c) of a metal that laterally extends within the barrier layer structure (20), and that is arranged against the functional layer structure (30), the electrically interconnected conductive structure (10) having a laterally facing, processed surface embedded in the first barrier layer (20).

Abstract: An organic light-emitting device is provided comprising a stack of layers including —an electro-optical layer structure (10) having a light emissive surface (12), —a light extraction structure (20) adjacent the light emissive surface, the light extraction structure has a nanostructured layer (22); and a backfill layer (24) comprising a material having a second index of refraction different from the first index of refraction, wherein the backfill layer (24) forms a planarizing layer over the nanostructured layer (22). The light emitting device includes a barrier film that comprises a first and a second inorganic layer (22, 26) and an organic layer (24) arranged between said inorganic layers. The one (22) of the inorganic layers of the barrier film closest to the electro-optical layer structure forms the nanostructured layer and the organic layer (24) between the inorganic layers forms the backfill layer.

Abstract: A method of manufacturing an opto-electric device is disclosed, comprising the steps of providing a substrate (10), overlying a first main side of the substrate with an electrically interconnected open shunting structure (20), embedding the electrically interconnected open shunting structure in a transparent layer (30), removing the substrate from the embedded electrically interconnected open shunting structure, depositing a functional layer structure (40) over a free surface (31) formed after removal of the substrate.

Abstract: An electro-optic device may include a substrate that supports a first and a second electrode, a functional structure including at least one functional layer that is electrically coupled to the electrodes, and an etched metal structure electrically coupled to at least one of the electrodes.

Abstract: An organic light-emitting device is provided comprising a stack of layers including—an electro-optical layer structure (10) having a light emissive surface (12), —a light extraction structure (20) adjacent the light emissive surface, the light extraction structure has a nanostructured layer (22); and a backfill layer (24) comprising a material having a second index of refraction different from the first index of refraction, wherein the backfill layer (24) forms a planarizing layer over the nanostructured layer (22). The light emitting device includes a barrier film that comprises a first and a second inorganic layer (22, 26) and an organic layer (24) arranged between said inorganic layers. The one (22) of the inorganic layers of the barrier film closest to the electro-optical layer structure forms the nanostructured layer and the organic layer (24) between the inorganic layers forms the backfill layer.

Abstract: A thin-film optoelectric device is disclosed comprising a functional layer structure (30) enclosed between a first barrier layer structure (20) and a second barrier layer structure (40), the device having an open, electrically interconnected conductive structure (10) that is embedded within the first barrier layer structure (20), that comprises at least one elongated element (12a, 12b, 12c) of a metal that laterally extends within the barrier layer structure (20), and that is arranged against the functional layer structure (30), the electrically interconnected conductive structure (10) having a laterally facing, processed surface embedded in the first barrier layer (20).

Abstract: A method of manufacturing an opto-electric device is disclosed, comprising the steps of providing a substrate (10), overlying a first main side of the substrate with an electrically interconnected open shunting structure (20), embedding the electrically interconnected open shunting structure in a transparent layer (30), removing the substrate from the embedded electrically interconnected open shunting structure, depositing a functional layer structure (40) over a free surface (31) formed after removal of the substrate.

Abstract: An electro-optic device (501) is provided comprising a substrate (570) that supports a first and a second electrode (515, 536), a functional structure (530) comprising at least one functional layer (532, 534), that is electrically coupled to the electrodes, an etched metal structure (512) being electrically coupled to at least one of the electrodes (515).