Abstract: A method of local implicit normalizing flow for arbitrary-scale image super-resolution, an associated apparatus and an associated computer-readable medium are provided. The method applicable to a processing circuit may include: utilizing the processing circuit to run a local implicit normalizing flow framework to start performing arbitrary-scale image super-resolution with a trained model of the local implicit normalizing flow framework according to at least one input image, for generating at least one output image, where a selected scale of the output image with respect to the input image is an arbitrary-scale; and during performing the arbitrary-scale image super-resolution with the trained model, performing prediction processing to obtain multiple super-resolution predictions for different locations of a predetermined space in a situation where a same non-super-resolution input image among the at least one input image is given, in order to generate the at least one output image.

Abstract: A high voltage transistor may include a stepped dielectric layer between a field plate structure and a channel region of the high voltage transistor in a substrate. The stepped dielectric layer may increase the breakdown voltage of the high voltage transistor by reducing the electric field strength near the drain region of the high voltage transistor. In particular, a portion of the stepped dielectric layer near the drain region includes a thickness that is greater relative to a thickness of another portion of the stepped dielectric layer near the gate structure. The increased thickness near the drain region provides increased electric field suppression near the drain region (which operates at high voltages). In this way, the stepped dielectric layer enables the high voltage transistor described herein to achieve higher breakdown voltages without increasing the distance between the gate structure and the drain region of a high voltage transistor.

Abstract: A method includes etching a gate stack in a wafer to form a trench, depositing a silicon nitride liner extending into the trench, and depositing a silicon oxide layer. The process of depositing the silicon oxide layer includes performing a treatment process on the wafer using a process gas including nitrogen and hydrogen, and performing a soaking process on the wafer using a silicon precursor.

Abstract: A manufacturing method for a LED is disclosed. The method includes: providing a substrate with an upper surface; preparing a plurality of LEDs on the upper surface; wherein the upper surface is divided into a plurality of zones, the plurality of LEDs composes a plurality of LED groups, and each of the LED group is disposed in one of the plurality of zones; preparing a testing circuit to electrically connecting the plurality of LEDs in one of the plurality of LED groups; testing the plurality of LEDs in the one of the plurality of LED groups by the testing circuit to obtain photoelectrical characteristics of the plurality of LEDs in the one of the plurality of LED groups; and presenting the photoelectric characteristics in an image.

Abstract: The present invention relates to a method for preparing a modified stem cell, including the following steps: a cell culture step: culturing stem cells in a first culture medium of a culture dish at a predetermined cell density, and removing the first culture medium after a first culture time to obtain a first cell intermediate; an activity stimulation step: preserving the first cell intermediate in a freezing container having a cell cryopreservation solution, and performing a constant temperature stimulation treatment or a variable temperature stimulation treatment for at least more than 1 day; and a product collection step: after completing the activity stimulation step, placing the freezing container in an environment at a thawing temperature for thawing, and then removing the cell cryopreservation solution to obtain the modified stem cell. The modified stem cell can release at least one or more of IL-4, IL-5, IL-13, G-CSF, Fractalkine, and EGF.

Abstract: An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first dielectric layer disposed over a substrate, a second dielectric layer disposed over the first dielectric layer, and a first conductive feature disposed in the second dielectric layer. The first conductive feature has a first top critical dimension and a first height. The structure further includes a second conductive feature disposed in the first and second dielectric layers. The second conductive feature has a second top critical dimension substantially greater than the first top critical dimension and a second height substantially greater than the first height.

Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: A connecting structure includes a first dielectric layer, a first connecting via in the first dielectric layer, a second connecting via in the first dielectric layer, and an isolation between the first connecting via and the second connecting via. The isolation separates the first and second connecting vias from each other. The first connecting via, the isolation and the second connecting via are line symmetrical about a central line perpendicular to a top surface of the first dielectric layer.

Abstract: A button mechanism includes a button, a module, and a thin sheet spring. The thin sheet spring is in physical communication with the button and with the module. The thin sheet spring exerts a tension force on the button and the module to bias the button toward a normal position. In response to a force greater than the tension force being exerted on the button, a portion of the thin sheet stretches to enable the button to be placed in a contact position. In response to the force being removed from the button, the tension force causes the thin sheet to snap back to an original position and biases the button toward the normal position.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.

Abstract: A cooling device applied to a server or other casing reduces airflow resistance. A covered chassis defines a accommodating groove and includes two opposite ends, an air inlet located at one end and an air outlet located at the other end, the air outlet communicating with the air inlet. The cover of the chassis is mounted adjacent a side of the chassis and seals the accommodating groove. The cover defines first and second openings corresponding to the accommodating groove. Part of cooling air exits the casing through the accommodating groove and the air outlet, the rest of the cooling air exits the casing through the first opening, re-enters the casing through the second opening and exits the casing through the air outlet.

Abstract: The disclosure provides a fan assembly for connecting the first fan to the second fan. The fan assembly includes at least one fastening member. Each of the first fan and the second fan includes a first flange and a second flange and a body interconnecting the first flange and the second flange, the fastening member includes a locating column and an elastic element. The elastic element is held between the first flange of the first fan and the second flange of the second fan, the locating column passes through the elastic element, the first flange of the first fan, and the second flange of the second fan, to connect the first fan to the second fan.

Abstract: The disclosure provides a fan assembly for connecting the first fan to the second fan. The fan assembly includes at least one fastening member. Each of the first fan and the second fan includes a first flange and a second flange and a body interconnecting the first flange and the second flange, the fastening member includes a locating column and an elastic element. The elastic element is held between the first flange of the first fan and the second flange of the second fan, the locating column passes through the elastic element, the first flange of the first fan, and the second flange of the second fan, to connect the first fan to the second fan.

Abstract: An attachment mechanism for fastening an expansion card includes a bracket and a bar. The bracket is fastened to a first end of the expansion card. The bar abuts a side of the expansion card adjoining the first end, and is fastened to both of the first end of the expansion card and a second end of the expansion card opposite to the first end.

Abstract: An attachment mechanism for fastening an expansion card includes a bracket and a bar. The bracket is fastened to a first end of the expansion card. The bar abuts a side of the expansion card adjoining the first end, and is fastened to both of the first end of the expansion card and a second end of the expansion card opposite to the first end.

Abstract: A fan assembly includes two fans, and a number of rigid bars. The fans are connected in series. Each of the fans includes an impeller. The impellers of the fans rotate in opposite directions. The rigid bars extend through the fans and are fixed to the fans, to counteract opposing torque forces produced by the fans.

Abstract: A container data center includes a container and a number of server cabinets received in the container. The container includes two opposite side plates. The server cabinets are arranged in a row perpendicular to the side plates. A connection pole is formed on each of opposite sides of each server cabinet. A connection pole is formed on an inner surface of each side plate. A damper is connected between every two neighboring connection poles.

Abstract: A fan assembly includes a first fan module and a second fan module arranged in parallel, and a shock absorber mounted between the first and second fan modules. A cavity is defined in a middle of the shock absorber, for counteracting and absorbing vibrations created by the first and second fan modules.

Abstract: A fan module includes a fan, a supporting rack, and a number of fasteners. The fan includes two opposite plates. A number of mounting holes are defined in each plate. The supporting rack includes a base and two opposite sidewalls extending up from the base. The fan is accommodated among the base and the sidewalls. Each fastener is made of vibration-resistant material, and includes an engaging portion sandwiched between a corresponding plate of the fan and a corresponding sidewall, and a latching portion extending from the engaging portion and latched to the corresponding mounting hole of the fan.