Patents by Inventor Chia-Chiang Chang

Chia-Chiang Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11996400
    Abstract: A manufacturing method of a package-on-package structure includes at least the following steps. Top packages are mounted on a top side of a reconstructed wafer over a flexible tape, where conductive bumps at a bottom side of the reconstructed wafer is attached to the flexible tape, and during the mounting, a shape geometry of the respective conductive bump changes and at least a lower portion of the respective conductive bump is embraced by the flexible tape. The flexible tape is released from the conductive bumps after the mounting.
    Type: Grant
    Filed: April 27, 2022
    Date of Patent: May 28, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsuan-Ting Kuo, Ching-Hua Hsieh, Cheng-Ting Chen, Hsiu-Jen Lin, Hao-Jan Pei, Yu-Peng Tsai, Chia-Lun Chang, Chih-Chiang Tsao, Philip Yu-Shuan Chung
  • Publication number: 20240153842
    Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.
    Type: Application
    Filed: January 4, 2024
    Publication date: May 9, 2024
    Inventors: Hao-Jan Pei, Wei-Yu Chen, Chia-Shen Cheng, Chih-Chiang Tsao, Cheng-Ting Chen, Chia-Lun Chang, Chih-Wei Lin, Hsiu-Jen Lin, Ching-Hua Hsieh, Chung-Shi Liu
  • Publication number: 20240145403
    Abstract: An electronic package is provided, in which electronic elements and at least one packaging module including a semiconductor chip and a shielding structure covering the semiconductor chip are disposed on a carrier structure, an encapsulation layer encapsulates the electronic elements and the packaging module, and a shielding layer is formed on the encapsulation layer and in contact with the shielding structure. Therefore, the packaging module includes the semiconductor chip and the shielding structure and has a chip function and a shielding wall function simultaneously.
    Type: Application
    Filed: February 6, 2023
    Publication date: May 2, 2024
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Chih-Hsien CHIU, Wen-Jung TSAI, Chih-Chiang HE, Ko-Wei CHANG, Chia-Yang CHEN
  • Patent number: 11923304
    Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a conductive interconnect disposed on a dielectric over a substrate. An interfacial layer is arranged along an upper surface of the conductive interconnect. A liner is arranged along a lower surface of the conductive interconnect. The liner and the interfacial layer surround the conductive interconnect. A middle layer is located over the interfacial layer and has a bottommost surface over the dielectric. A bottommost surface of the interfacial layer and the bottommost surface of the middle layer are both above a top of the conductive interconnect.
    Type: Grant
    Filed: November 28, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Su-Jen Sung, Chih-Chiang Chang, Chia-Ho Chen
  • Publication number: 20220020564
    Abstract: A plasma generating device includes a plasma sprinkler head and an outer housing, wherein the plasma sprinkler head includes a case and a plasma generating assembly disposed on the case and having a plasma nozzle. The plasma nozzle is located on a side of the case. The outer housing is disposed on the case and is located around the plasma nozzle. In this way, when the plasma nozzle sprays the plasma, the plasma generating device of the present invention could effectively avoid introducing too much external air to affect a quality of the plasma.
    Type: Application
    Filed: July 13, 2021
    Publication date: January 20, 2022
    Applicant: AP PLASMA CORPORATION
    Inventor: CHIA-CHIANG CHANG
  • Publication number: 20160236456
    Abstract: A method of adhering an ethyl vinyl acetate copolymer or a derivative thereof layer to a thermoplastic elastomer layer includes providing the ethyl vinyl acetate copolymer or the derivative thereof layer; performing a first atmospheric environmental plasma treatment on a surface of the ethyl vinyl acetate copolymer or the derivative thereof layer to form a first modified surface; providing the thermoplastic elastomer layer; performing a second atmospheric environmental plasma treatment on a surface of the thermoplastic elastomer layer to form a second modified surface; forming an adhesive layer over the first modified surface, the second modified surface, or the first modified surface and the second modified surface; and adhering the first modified surface to the second modified surface through the adhesive layer.
    Type: Application
    Filed: February 5, 2016
    Publication date: August 18, 2016
    Inventors: Chia-Chiang CHANG, Han-Chung LAI
  • Patent number: 8766127
    Abstract: A touch sensor is provided. The touch sensor includes a first buffer layer disposed on a substrate, a first electrode layer disposed on the first buffer layer, a second buffer layer disposed on the first electrode layer and a second electrode layer disposed on the second buffer layer and electrically connected with the first electrode layer, wherein the first and second buffer layers are formed of the same material including an insulated metal oxide, and the first and second electrode layers are formed of the same material including a doped metal oxide.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: July 1, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Chiang Chang, Ta-Hsin Chou, Wen-Tung Hsu
  • Publication number: 20140130740
    Abstract: A plasma deposition apparatus including a plasma generation unit and a droplet separation unit is provided. The plasma generation unit includes an inlet end and an outlet end. The droplet separation unit is located at the inlet end. Besides, the droplet separation unit includes a first chamber, an import port, and a connection port. The import port and the connection port are connected to the first chamber. The connection port is connected to the inlet end, and the import port serves to receive an atomized precursor. The atomized precursor is separated into a first portion and a second portion after entering the first chamber, and droplets of the first portion are smaller than droplets of the second portion. The first portion of the atomized precursor is suitable for entering the inlet end through the connection port.
    Type: Application
    Filed: December 24, 2012
    Publication date: May 15, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jui-Mei Hsu, Chen-Der Tsai, Jiuan-Ren Jei, Ying-Fang Chang, Chia-Chiang Chang
  • Publication number: 20130277195
    Abstract: A touch sensor is provided. The touch sensor includes a first buffer layer disposed on a substrate, a first electrode layer disposed on the first buffer layer, a second buffer layer disposed on the first electrode layer and a second electrode layer disposed on the second buffer layer and electrically connected with the first electrode layer, wherein the first and second buffer layers are formed of the same material including an insulated metal oxide, and the first and second electrode layers are formed of the same material including a doped metal oxide.
    Type: Application
    Filed: September 14, 2012
    Publication date: October 24, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHIA-CHIANG CHANG, Ta-Hsin Chou, Wen-Tung Hsu
  • Publication number: 20130167920
    Abstract: A fabricating method of a conductive substrate including the following steps is provided. A substrate is provided. A barrier layer having a first roughened surface is formed on the substrate by an atmospheric pressure plasma process, wherein the surface roughness (Ra) of the first roughened surface formed by the atmospheric pressure plasma process is between 10 nanometers (nm) and 100 nm. A first electrode layer is formed on the first roughened surface of the barrier layer by a vacuum sputter process, wherein a second roughened surface with the surface roughness (Ra) between 10 nm and 100 nm is formed on a surface of the first electrode layer. Furthermore, a photoelectric conversion layer is formed on the second roughened surface of the first electrode layer. A second electrode layer is formed on the photoelectric conversion layer. A solar cell and a conductive substrate are also provided.
    Type: Application
    Filed: August 6, 2012
    Publication date: July 4, 2013
    Applicants: BAY ZU PRECISION CO., LTD., INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Chun-Hsien Su, Dao-Yang Huang
  • Patent number: 8281741
    Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle ?2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: October 9, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
  • Patent number: 8075790
    Abstract: A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the plasma generator, and sucking a by-product of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as a surface cleansing means under atmospheric conditions.
    Type: Grant
    Filed: April 1, 2008
    Date of Patent: December 13, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Chen-Der Tsai, Chun-Hung Lin
  • Patent number: 7998764
    Abstract: A solid-state light emitting display and a fabrication method thereof are proposed. The light emitting display includes a metallic board formed with conductive circuits, and a plurality of luminous microcrystals disposed on a surface of the metallic board and electrically connected to the conductive circuits. The metallic board provides the features of lightness and thinness, and flexibility, and the luminous microcrystals are in the form of light emitting components, so as to improve the luminous efficiency of display and attain the effect of environmental protection and energy saving, thereby providing display technology with performance satisfactory for various display requirements.
    Type: Grant
    Filed: July 18, 2008
    Date of Patent: August 16, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Hung Hung, Chia-Chiang Chang, Chun-Hung Lin
  • Publication number: 20110171426
    Abstract: A hard water-repellent structure and a method for fabricating the same are provided. The method adopts an atmospheric pressure plasma deposition (APPD) technique to form a hard coating having a rough surface on a substrate, and form a water-repellent coating on the rough surface. Because the hard water-repellent structure includes the hard coating and the water-repellent coating, hardness, abrasion-resistance, transparency and hydrophobicity of the hard water-repellent structure are improved. The hard water-repellent structure protects the substrate from friction. Moreover, because the disclosure adopts the APPD technique to form the hard water-repellent structure, the cost of production is reduced dramatically. Thus, the disclosure can solve drawbacks of prior art.
    Type: Application
    Filed: February 22, 2011
    Publication date: July 14, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Wei Chen, Chun-Hung Lin, Tsung-Hui Cheng, Chih-Yuan Chen, Te-Hui Yang, Chen-Der Tsai, Chin-Jyi Wu, Yun-Chuan Tu, Chia-Chiang Chang
  • Publication number: 20110120372
    Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle ?2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.
    Type: Application
    Filed: February 1, 2011
    Publication date: May 26, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
  • Patent number: 7923076
    Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle ?1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle ?2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: April 12, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Shin-Chih Liaw, Chun-Hung Lin
  • Publication number: 20110073563
    Abstract: A patterning method for a carbon-based substrate is provided. The patterning method for the carbon-based substrate includes the following steps. The carbon-based substrate is provided. An atmospheric pressure plasma is produced from a plasma gas under an open air environment. The plasma gas includes oxygen. The carbon-based substrate is etched by the atmospheric pressure plasma.
    Type: Application
    Filed: September 25, 2009
    Publication date: March 31, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Shu-Jiuan Huang, Wen-Tung Hsu, Chih-Ming Hu, Shin-Liang Kuo
  • Patent number: 7897974
    Abstract: A solid-state light emitting display and a fabrication method thereof are proposed. The light emitting display includes a metallic board formed with conductive circuits, and a plurality of luminous microcrystals disposed on a surface of the metallic board and electrically connected to the conductive circuits. The metallic board provides the features of lightness and thinness, and flexibility, and the luminous microcrystals are in the form of light emitting components, so as to improve the luminous efficiency of display and attain the effect of environmental protection and energy saving, thereby providing display technology with performance satisfactory for various display requirements.
    Type: Grant
    Filed: December 7, 2005
    Date of Patent: March 1, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Hung Hung, Chia-Chiang Chang, Chun-Hung Lin
  • Patent number: 7883181
    Abstract: Atmospheric plasma inkjet printing apparatus and methods for fabricating color filters using the same. The atmosphere plasma inkjet printing apparatus includes a nozzle plate having a first column of nozzles and a second column of nozzles. An inkjet printhead module corresponds to the first column of nozzles. An atmospheric plasma module is corresponds to the second column of nozzles.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: February 8, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chun-Hung Lin, Chia-Chiang Chang, Chao-Kai Cheng, Chieh-Yi Huang, Wan-Wen Chiu
  • Publication number: 20090162263
    Abstract: An atmospheric-pressure plasma reactor comprising a first electrode, a second electrode and a power generation unit. The first electrode and the second electrode respectively have a first opening and a second opening corresponding to each other. Disposed inside the first electrode is a gas-in space, which communicates with the first opening. Moreover, the power generation unit is coupled to the first electrode to provide the first electrode with AC power. The second electrode is grounded. The plasma process by the atmospheric-pressure plasma reactor is capable of forming high-uniformity thin film on a substrate.
    Type: Application
    Filed: May 20, 2008
    Publication date: June 25, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHIA-CHIANG CHANG, JIN-CHING WU, CHIH-WEI CHEN, WEN-TUNG HSU