Abstract: A semiconductor device includes a first conductor structure extending along a lateral direction. The semiconductor device includes a first memory film that extends along a vertical direction and is in contact with the first conductor structure. The semiconductor device includes a first semiconductor film that extends along the vertical direction and is in contact with the first memory film. Ends of the first semiconductor film align with ends of the first memory film, respectively. The semiconductor device includes a second conductor structure extending along the vertical direction. The semiconductor device includes a third conductor structure extending along the vertical direction. The semiconductor device includes a fourth conductor structure extending along the vertical direction. The second and fourth conductor structures are coupled to the ends of the first semiconductor film, and the third conductor structure is coupled to a portion of the first semiconductor film between its ends.

Abstract: A ferroelectric memory device and a memory array are provided. The ferroelectric memory device includes a word line; a pair of source/drain electrodes, a channel layer, a work function layer and a ferroelectric layer. The source/drain electrodes are disposed at opposite sides of the word line, and elevated from the word line. The channel layer has a bottom planar portion and wall portions. The bottom planar portion extends along a top surface of the word line, and opposite ends of the bottom planar portion are connected to sidewalls of the source/drain electrodes through opposite ones of the wall portions. The work function layer is electrically connected to the word line, and extends along the bottom planar portion and the wall portions of the channel layer. The ferroelectric layer separates the channel layer from the work function layer.

Abstract: A sweep voltage generator and a display panel are provided. The sweep voltage generator includes an output node, a current generating block and a voltage regulating block. The output node is used to provide a sweep signal. The current generating block is coupled to the output node, includes a detection path for detecting an output load variation on the output node, and adjusts the sweep signal provided by the output node based on the output load variation. The voltage regulating block is coupled to the output node for regulating a voltage of the output node.

Abstract: A method of making a ROM structure includes the operations of forming an active area having a channel, a source region, and a drain region; depositing a gate electrode over the channel; depositing a conductive line over at least one of the source region and the drain region; adding dopants to the source region and the drain region of the active area; forming contacts to the gate electrode, the source region, and the drain; depositing a power rail, a bit line, and at least one word line of the integrated circuit against the contacts; and dividing the active area with a trench isolation structure to electrically isolate the gate electrode from the source region and the drain region.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: Provided is a method for treating cancer by administering to a subject in need thereof with a pharmaceutical composition including a benzenesulfonamide derivative in combination with a cancer immunotherapeutic agent such as the immune check point inhibitor (ICI).

Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure, disposed over a substrate; a ferroelectric material, disposed over the gate structure; a source structure and a drain structure, disposed above the ferroelectric material; an isolation, surrounding the source structure and the drain structure; and an oxide semiconductor, surrounding a portion of the isolation between the source structure and the drain structure. A method of manufacturing the semiconductor structure is also provided.

Abstract: A semiconductor device includes a first transistor, a second transistor, and a memory component. The first transistor includes a first silicon layer, a high-k gate dielectric layer above the first silicon layer, a first metal gate above the high-k gate dielectric layer, and first source/drain regions within the first silicon layer. The second transistor includes a second silicon layer, a first silicon oxide layer above the second silicon layer, a plurality of first doped silicon gates above the first silicon oxide layer, a plurality of second doped silicon gates above the first silicon oxide layer and alternately arranged with the plurality of first doped silicon gates, and second source/drain regions within the second silicon layer. The memory component is above the first and second transistors, and electrically coupled to the second source or drain region.

Abstract: A memory structure includes a plurality of memory cells arranged in an array. Each of the memory cells includes a memory region, a word line portion disposed on a first surface of the memory region, a first conductive block disposed on a second surface of the memory region opposite to the first surface, a second conductive block disposed on the second surface of the memory region, and a third conductive block disposed on the second surface of the memory region such that the third conductive block is disposed between and separated from the first conductive block and the second conductive block.

Abstract: A method (of writing to a ferroelectric field-effect transistor (FeFET) configured as a 2-bit storage device that stores two bits, wherein the FeFET includes a first source/drain (S/D) terminal, a second S/D terminal, a gate terminal and a ferroelectric layer, a second bit being at a first end of the ferroelectric layer, the first end being proximal to the first S/D terminal) includes: setting the second bit to a logical 1 value, the setting a second bit including applying a gate voltage to the gate terminal, and applying a first source/drain voltage to the second S/D terminal; and wherein the first source/drain voltage is lower than the gate voltage.

Abstract: Duplicated packet transmission methods are provided. The duplicated packet transmission method may include the following steps. A sender may determine whether to pad at least one duplicated packet into a multi-user physical-protocol-data-unit (MU-PPDU) based on at least one condition. Then, the sender may transmit the MU-PPDU with the duplicated packet to at least one receiver when the condition is met.

Abstract: A semiconductor device includes a plurality of ferroelectric memory cells arranged over a substrate. Each of the plurality of ferroelectric memory cells includes: a first conductive structure extending along a first lateral direction and having a central portion and a pair of side portions, the side portions respectively extending away from the central portion along a second lateral direction perpendicular to the first lateral direction; a ferroelectric layer disposed above the first conductive structure and in contact with the central portion of the first conductive structure; a channel film disposed above a portion of the ferroelectric layer; a second conductive structure disposed above and in contact with the channel film; and a third conductive structure disposed above and in contact with the channel film.

Abstract: The present disclosure relates to methods and compositions for the treatment of degenerate bone in a patient. In some embodiments, the methods and compositions disclosed herein are useful in the treatment, prevention, or in delaying the progression of a bone disease linked to bone degeneration, such as osteoarthritis (“OA”), rheumatoid arthritis, and avascular necrosis.

Abstract: The present disclosure relates to methods and compositions for the treatment of degenerate bone in a patient. In some embodiments, the methods and compositions disclosed herein are useful in the treatment, prevention, or in delaying the progression of a bone disease linked to bone degeneration, such as osteoarthritis (“OA”), rheumatoid arthritis, and avascular necrosis.

Abstract: The invention describes novel nitrosated nonsteroidal antiinflammatory drugs (NSAIDs) and pharmaceutically acceptable salts thereof, and novel compositions comprising at least one nitrosated NSAID, and, optionally, at least one compound that donates, transfers or releases nitric oxide, stimulates endogenous synthesis of nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor or is a substrate for nitric oxide synthase, and/or at least one therapeutic agent. The invention also provides novel compositions comprising at least one nitrosated NSAID, and at least one compound that donates, transfers or releases nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor, stimulates endogenous synthesis of nitric oxide or is a substrate for nitric oxide synthase and/or at least one therapeutic agent. The invention also provides novel kits comprising at least one nitrosated NSAID, and, optionally, at least one nitric oxide donor and/or at least one therapeutic agent.

Abstract: The invention also provides methods for treating inflammation, pain and fever; for treating gastrointestinal disorders; for facilitating wound healing; for treating and/or preventing gastrointestinal, renal and/or respiratory toxicities resulting from the use of nonsteroidal antiinflammatory compounds; for treating inflammatory disease states and/or disorders; and for treating and/or preventing ophthalmic diseases and/or disorders comprising administration of novel compositions comprising at least one nitrosated NSAID, and, optionally, at least one compound that donates, transfers or releases nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor, stimulates endogenous synthesis of nitric oxide or is a substrate for nitric oxide synthase and/or at least one therapeutic agent.

Abstract: The invention describes novel nitrosated nonsteroidal anti-inflammatory drugs (NSAIDs) and pharmaceutically acceptable salts thereof, and novel compositions comprising at least one nitrosated NSAID, and, optionally, at least one compound that donates, transfers or releases nitric oxide, stimulates endogenous synthesis of nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor or is a substrate for nitric oxide synthase, and/or at least one therapeutic agent. The invention also provides novel compositions comprising at least one nitrosated NSAID, and at least one compound that donates, transfers or releases nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor, stimulates endogenous synthesis of nitric oxide or is a substrate for nitric oxide synthase and/or at least one therapeutic agent. The invention also provides novel kits comprising at least one nitrosated NSAID, and, optionally, at least one nitric oxide donor and/or at least one therapeutic agent.

Abstract: The invention also provides methods for treating inflammation, pain and fever; for treating gastrointestinal disorders; for facilitating wound healing; for treating and/or preventing gastrointestinal, renal and/or respiratory toxicities resulting from the use of nonsteroidal antiinflammatory compounds; for treating inflammatory disease states and/or disorders; and for treating and/or preventing ophthalmic diseases and/or disorders comprising administration of novel compositions comprising at least one nitrosated NSAID, and, optionally, at least one compound that donates, transfers or releases nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor, stimulates endogenous synthesis of nitric oxide or is a substrate for nitric oxide synthase and/or at least one therapeutic agent.

Abstract: The invention describes novel nitrosated nonsteroidal antiinflammatory drugs (NSAIDs) and pharmaceutically acceptable salts thereof, and novel compositions comprising at least one nitrosated NSAID, and, optionally, at least one compound that donates, transfers or releases nitric oxide, stimulates endogenous synthesis of nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor or is a substrate for nitric oxide synthase, and/or at least one therapeutic agent. The invention also provides novel compositions comprising at least one nitrosated NSAID, and at least one compound that donates, transfers or releases nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor, stimulates endogenous synthesis of nitric oxide or is a substrate for nitric oxide synthase and/or at least one therapeutic agent. The invention also provides novel kits comprising at least one nitrosated NSAID, and, optionally, at least one nitric oxide donor and/or at least one therapeutic agent.

Abstract: The invention describes novel nitrosated nonsteroidal antiinflammatory drugs (NSAIDs) and pharmaceutically acceptable salts thereof, and novel compositions comprising at least one nitrosated NSAID, and, optionally, at least one compound that donates, transfers or releases nitric oxide, stimulates endogenous synthesis of nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor or is a substrate for nitric oxide synthase, and/or at least one therapeutic agent. The invention also provides novel compositions comprising at least one nitrosated NSAID, and at least one compound that donates, transfers or releases nitric oxide, elevates endogenous levels of endothelium-derived relaxing factor, stimulates endogenous synthesis of nitric oxide or is a substrate for nitric oxide synthase and/or at least one therapeutic agent. The invention also provides novel kits comprising at least one nitrosated NSAID, and, optionally, at least one nitric oxide donor and/or at least one therapeutic agent.