Abstract: An Auger plate for converting line emission x-ray photons into cascades of Auger electrons that form transient electric charges and for channeling the transient electric charges to an optical imager for conversion of the transient electric charges into a radiographic signal, the Auger plate including an array of Auger sensors which are graphite fibers coated with CsI or Gd coatings. The coatings are configured and arranged to bind the graphite fibers together and to convert the line emission x-ray photons into the cascades of Auger electrons to form the transient electric charges. The graphite fibers are configured and arranged to channel the transient electric charges toward the optical imager. Also, a detector including the Auger plate, a conductive film and an optical imager and a method for preparing the Auger plate.

Abstract: An apparatus for low dose mammography including: (1) a monochromatic X-ray beam generator that emits a first beam of monochromatic line emission X-ray photons having an energy at or nearly above an absorption edge of a first element to induce emission of Auger electrons when the first element is irradiated with the X-ray photons; and (2) an X-ray detector including (a) a pixel or plurality of pixels including an array of pixel sensors each of which has (i) a direct conversion layer configured for receiving the X-ray photons and for converting the X-ray photons into a transient electric charge, the direct conversion layer comprising the first element such that the line emission X-ray photons causes a cascade of Auger electrons that form the transient electric charge, and (ii) a semiconductor collection layer configured for receiving Auger electrons of said electric charge from the conversion layer; and (b) processing electronics for converting the electric charge received in the collection layer into a rad

Abstract: The present invention is directed to a thin film lithium-ion battery having at least a laminate structure therein. The laminate structure includes a bottom current collector layer, an anode consisting of a superlattice layer and a silicon based layer, an electrolyte and separator, a cathode and a top current collector layer sequentially stacked together. The electrolyte and separator of the laminate structure contains lithium ions.

Abstract: An apparatus for low dose mammography including: (1) a monochromatic X-ray beam generator that emits a first beam of monochromatic line emission X-ray photons having an energy at or nearly above an absorption edge of a first element to induce emission of Auger electrons when the first element is irradiated with the X-ray photons; and (2) an X-ray detector including (a) a pixel or plurality of pixels including an array of pixel sensors each of which has (i) a direct conversion layer configured for receiving the X-ray photons and for converting the X-ray photons into a transient electric charge, the direct conversion layer comprising the first element such that the line emission X-ray photons causes a cascade of Auger electrons that form the transient electric charge, and (ii) a semiconductor collection layer configured for receiving Auger electrons of said electric charge from the conversion layer; and (b) processing electronics for converting the electric charge received in the collection layer into a radi

Abstract: A photovoltaic (PV) device including: (a) a p-n junction having (i) p-type silicon substrate with an Al-doped P++ surface, (ii) a wide band intrinsic AlP region having a first side formed on the Al-doped P++ surface of the silicon substrate, and (iii) an Si-doped n++ surface formed on a second side of the AlP region that is opposite to the first side; (b) charged quantum dots formed on the Si-doped n++ surface of the p-n junction and optionally (c) an electrode connected to each side of the device; wherein the charged quantum dots are operatively linked to the p-n junction to enable electrons harvested from IR photons absorbed by the quantum dots to be harvested with electrons harvested from photons absorbed by the p-n junction and wherein the wide band intrinsic AlP region is configured to inhibit leakage of hole current. Also, a method for forming the PV device.

Abstract: An X-ray phase-shift contrast imaging method and the system thereof are provided. The X-ray phase-shift contrast imaging method utilizes characteristic X-rays of high throughput irradiating at the target from different positions or with different focal positions so as to form different X-ray images. The X-ray images are compared to define the voxels and combined to obtain a 3-D X-ray image. By using X-ray phase-shift contrast for imaging the soft tissue, the level of the image contrast may be enhanced several orders of magnitude and the linear energy transfer of the high energy photon beam is greatly reduced. Hence, the radiation dose absorbed by the tissue may be greatly reduced.

Abstract: A method for fabricating a p-type semiconductor substrate including the following steps is provided. A carrier is provided, and the carrier includes a III-V compounds semiconductor layer and a III element layer disposed on the III-V compounds semiconductor layer. Si powders are disposed onto the III element layer of the carrier. The carrier is heated to enable the Si powders and the III element layer of the carrier to form a p-type poly-Si layer. In addition, a solar cell and a method of fabricating thereof are also provided.

Abstract: A photovoltaic (PV) device including: (a) a p-n junction having (i) p-type silicon substrate with an Al-doped P++ surface, (ii) a wide band intrinsic AlP region having a first side formed on the Al-doped P++ surface of the silicon substrate, and (iii) an Si-doped n++ surface formed on a second side of the AlP region that is opposite to the first side; (b) charged quantum dots formed on the Si-doped n++ surface of the p-n junction and optionally (c) an electrode connected to each side of the device; wherein the charged quantum dots are operatively linked to the p-n junction to enable electrons harvested from IR photons absorbed by the quantum dots to be harvested with electrons harvested from photons absorbed by the p-n junction and wherein the wide band intrinsic AlP region is configured to inhibit leakage of hole current. Also, a method for forming the PV device.

Abstract: A method of fabricating a solar cell on a conveyer belt is provided. The method includes the following steps. A first surface of an aluminum foil is coated with a layer of phosphorous mixed with a plurality of graphite powders and put on the conveyer belt. A first thermal treatment is performed to activate a portion of the aluminum foil and the phosphorous layer on the first surface to form an aluminum phosphide (AlP) layer. A molten silicon material is spray-coated on a second surface of the remaining aluminum foil, and a second thermal treatment is performed to make the silicon material transferring into a p-type polySi layer on the n-type AlP layer. A solar cell including the n-type AlP layer and the p-type polySi layer is formed, and the solar cell is respectively annealed and cooled down in a first and a second vertical stack.

Abstract: A pineapple pump is provided. The pineapple pump includes a rotor chamber and a rotor. The rotor chamber may include a plurality of cooling columns for thermal management. The rotor is rotatably disposed in the rotor chamber and the cooling columns are located at a fluid outlet of the rotor. The rotor has a rotary shaft to deliver a tangential torque. When the rotor rotates with the rotary shaft to guide a fluid, the fluid has a radial displacement perpendicular to the tangential torque of the rotor, thereby de-coupling the tangential torque and a pressure gradient of the fluid caused by the rotor.

Abstract: This invention relates to the use of thick target materials 50 microns and thicker for an x-ray transmission tube; to possible target material compositions including various elements and their alloys, eutectic alloys, compounds, or intermetallic compounds; and applications for utilizing such thick target transmission x-ray tubes. The target comprises at lease one portion of the target with a thickness of 50 microns or greater. The target can be optionally attached to a substrate end-window essentially transparent to x-rays or be thick enough so that no such substrate is required. Applications include producing a high percentage of monochromatic line mission x-rays of said thick target for use in reduced dose medical imaging and other non-destructive testing applications.

Abstract: A method of treating living mammals including humans uses x-rays to disrupt DNA in malfunctioning cells such as cancerous or tumorous cells. A compound comprising a pre-selected element is administered to the mammal so that the compound associates with DNA. Then a localized region of cells which contains the malfunctioning cells is irradiated with line emission x-rays of an energy selected to cause emission of Auger electrons from the pre-selected element of the compound to disrupt DNA proximate to the irradiated pre-selected element. A kit useful for the treatment comprises an x-ray tube capable of emitting monochromatic line emission x-rays and a compound which associates with DNA and has an element which when irradiated emits said Auger electrons.

Abstract: This invention relates to the use of thick target materials 50 microns and thicker for an x-ray transmission tube; to possible target material compositions including various elements and their alloys, eutectic alloys, compounds, or intermetallic compounds; and applications for utilizing such thick target transmission x-ray tubes. The target comprises at lease one portion of the target with a thickness of 50 microns or greater. The target can be optionally attached to a substrate end-window essentially transparent to x-rays or be thick enough so that no such substrate is required. Applications include producing a high percentage of monochromatic line mission x-rays of said thick target for use in reduced dose medical imaging and other non-destructive testing applications.

Abstract: A method of treating cancer in a human uses x-rays to disrupt a linkage in a complex of a chemotherapeutic agent and a carrier compound comprising a pre-selected element. The complex is administered to the human and then a localized region of cells which contains the cancerous cells is irradiated with line emission x-rays of an energy selected to cause emission of Auger electrons from the pre-selected element of the carrier compound to disrupt the linkage and release the chemotherapeutic agent near the cancer cells. A kit useful for the treatment comprises an x-ray tube capable of emitting monochromatic line emission x-rays and the complex compound. A transfer compound useful in the method comprises a chemotherapeutic agent linked to a carrier compound.

Abstract: A mammography method images breast tissue with an end window X-ray transmission tube to detect the presence of neovascular micro-vessels as defining vascular structure associated with a suspect tumorous mass. A kit therefor has a high-efficiency, end window X-ray transmission tube and a supply of a contrast agent.

Abstract: The invention relates to targets for an X-ray transmission tube (9); to a high efficiency, high excitation energy X-ray transmission tube; to combinations of the targets and high efficiency X-ray transmission tubes; and applications for utilizing such X-ray tubes. The target comprises two or more different thin foils (1) or at least two foils of the same material but different foil thickness on separate areas of a substantially planar substrate which is substantially transparent to X-rays. The target may also comprise at least two different foils (2, 3) layered sequentially one of the other, wherein X-rays are produced when an electron beam impinges the foil closest to the source fo the electron beam; wherein the energy of the electron beam is selectively changed to produce X-rays of a least one preselected energy characteristic of at least one of the foils.

Abstract: A method for producing an insulating or barrier layer (FIG. 1B), useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on a silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer. Alternatively, a monolayer of one or more elements, preferably comprising oxygen, is absorbed on a silicon substrate. A plurality of insulating layers sandwiched between epitaxial silicon forms a barrier composite. Semiconductor devices are disclosed which comprise said barrier composite.

Abstract: A bandgap cascade cold cathode is obtained by constructing a wide bandgap Si/C superlattice thin film; depositing Si on the epitaxial silicon surface under CVD or ALD; depositing on the Si/C surface a first metal effective to form a metal-silicide electrode; etching away the silicon substrate to form an effectively smooth Si/C surface thereon; coating the effectively smooth Si/C surface with a thicker second effective metal to form a Schottky electrode surface on which a layer of about 200 nm Pt or Au is coated with edges masked off and welded onto a Cu electrode disc as a heat sink. During avalanche multiplication under reverse bias over the Si/C layer, the bandgap energy cascades from the Schottky electrode to the sink electrode and is used to balance against the work function of the sink electrode, thereby allowing the sink electrode to function as a cold cathode emitter at a reduced applied external field.

Abstract: A Si/C superlattice useful for semiconductor devices comprises a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers. Structures and devices comprising the superlattice and methods are described.

Abstract: A method for producing an insulating or barrier layer (FIG. 1B), useful for semiconductor devices, comprises depositing a layer of silicon and at least one additional element on a silicon substrate whereby said deposited layer is substantially free of defects such that epitaxial silicon substantially free of defects can be deposited on said deposited layer. Alternatively, a monolayer of one or more elements, preferably comprising oxygen, is absorbed on a silicon substrate. A plurality of insulating layers sandwiched between epitaxial silicon forms a barrier composite. Semiconductor devices are disclosed which comprise said barrier composite.